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| Datasheet File OCR Text: |
| TRW54601 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TRW54601 is Designed for General Purpose Oscillator Applications up to 2.3 GHz. PACKAGE STYLE .280 4L STUD FEATURES: * Diffused Ballast Resistors * OmnigoldTM Metalization System * Common Emitter MAXIMUM RATINGS IC VCES PDISS TJ TSTG JC 400 mA 50 V 3.0 W @ TC = 25 C -65 C to +200 C -65 C to +200 C 35 C/W 1 = COLLECTOR 2 = EMITTER 3 = BASE CHARACTERISTICS SYMBOL BVCEO BVCES BVEBO ICBO hFE COB PG VSRW IC = 10 mA IC = 10 mA IE = 1.0 mA VCB = 28 V VCE = 5.0 V VCB = 28 V TC = 25 C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM 22 50 3.5 0.5 UNITS V V V mA --- IC = 100 mA f = 1.0 MHz IC = 120 mA f = 2.3 GHz 20 2.4 8.5 9.5 30:0 3.0 pF dB --- VCE = 20 V POUT = 0.5 W A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 |
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