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| DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PEMZ1 NPN/PNP general purpose transistors Product specification Supersedes data of 2001 Sep 25 2001 Nov 07 Philips Semiconductors Product specification NPN/PNP general purpose transistors FEATURES * 300 mW total power dissipation * Very small 1.6 x 1.2 mm ultra thin package * Self alignment during soldering due to straight leads * Replaces two SC-75/SC-89 packaged transistors on same PCB area * Reduced required PCB area * Reduced pick and place costs. APPLICATIONS * General purpose switching and amplification * Complementary MOSFET driver for switch mode power supply * Complementary driver for audio amplifiers. DESCRIPTION NPN/PNP transistor pair in a SOT666 plastic package. MARKING TYPE NUMBER PEMZ1 MARKING CODE FZ 1 Top view TR1 handbook, halfpage 6 PEMZ1 PINNING PIN 1, 4 2, 5 6, 3 emitter base collector DESCRIPTION TR1; TR2 TR1; TR2 TR1; TR2 5 4 6 5 4 TR2 2 3 MAM456 1 2 3 Fig.1 Simplified outline (SOT666) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS - - - - - - Tamb 25 C; note 1 - -65 - -65 Tamb 25 C; note 1 - MIN. MAX. UNIT Per transistor; for the PNP transistor with negative polarity VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Per device Ptot Note 1. Transistor mounted on an FR4 printed-circuit board. 2001 Nov 07 2 total power dissipation 300 mW collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature open emitter open base open collector 50 40 5 100 200 200 200 +150 150 +150 V V V mA mA mA mW C C C Philips Semiconductors Product specification NPN/PNP general purpose transistors THERMAL CHARACTERISTICS SYMBOL Rth j-a Notes 1. Transistor mounted on an FR4 printed-circuit board. 2. The only recommended soldering method is reflow soldering. CHARACTERISTICS Tamb = 25 C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. - - - 120 - TYP. - - - - - - - - PARAMETER thermal resistance from junction to ambient CONDITIONS notes 1 and 2 VALUE 416 PEMZ1 UNIT K/W MAX. UNIT Per transistor; for the PNP transistor with negative polarity ICBO IEBO hFE VCEsat fT Cc collector-base cut-off current emitter-base cut-off current DC current gain collector-emitter saturation voltage transition frequency collector capacitance TR1 (NPN) TR2 (PNP) Note 1. Pulse test: tp 300 s; 0.02. VCB = 30 V; IE = 0 VCB = 30 V; IE = 0; Tj = 150 C VEB = 4 V; IC = 0 VCE = 6 V; IC = 1 mA IC = 50 mA; IB = 5.0 mA; note 1 100 10 100 - 200 - 1.5 2.2 mV MHz pF pF nA A nA IC = 2 mA; VCE = 12 V; f = 100 MHz 100 IE = ie = 0; VCB = 12 V; f = 1 MHz - - 2001 Nov 07 3 Philips Semiconductors Product specification NPN/PNP general purpose transistors PEMZ1 handbook, halfpage 400 MHC005 handbook, halfpage 400 MHC004 hFE 300 hFE 300 200 200 100 100 0 10-1 1 10 102 IC (mA) 103 0 -10-1 -1 -10 -102 -103 IC (mA) TR1 (NPN); VCE = 5 V. TR2 (PNP); VCE = -5 V. Fig.2 DC current gain as a function of collector current; typical values Fig.3 DC current gain as a function of collector current; typical values 2001 Nov 07 4 Philips Semiconductors Product specification NPN/PNP general purpose transistors PACKAGE OUTLINE Plastic surface mounted package; 6 leads PEMZ1 SOT666 D A E X S YS HE 6 5 4 pin 1 index A 1 e1 e 2 bp 3 wMA Lp detail X c 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 0.6 0.5 bp 0.27 0.17 c 0.18 0.08 D 1.7 1.5 E 1.3 1.1 e 1.0 e1 0.5 HE 1.7 1.5 Lp 0.3 0.1 w 0.1 y 0.1 OUTLINE VERSION SOT666 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 01-01-04 01-08-27 2001 Nov 07 5 Philips Semiconductors Product specification NPN/PNP general purpose transistors DATA SHEET STATUS DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2) Development DEFINITIONS PEMZ1 This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A. Preliminary data Qualification Product data Production Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 2001 Nov 07 6 Philips Semiconductors Product specification NPN/PNP general purpose transistors NOTES PEMZ1 2001 Nov 07 7 Philips Semiconductors - a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. (c) Koninklijke Philips Electronics N.V. 2001 SCA73 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/02/pp8 Date of release: 2001 Nov 07 Document order number: 9397 750 09053 |
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