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YG808C10R
SCHOTTKY BARRIER DIODE
(100V / 30A TO-22OF15)
Outline Drawings
100.5 o3.2
+0.2 -0.1
4.50.2 2.70.2 6.3
2.70.2 3.70.2
1.20.2 13Min
Features
Low VF Super high speed switching. High reliability by planer design.
150.3
0.70.2 2.540.2
0.6 -0
+0.2
2.70.2
JEDEC EIAJ
SC-67
Applications
High speed power switching.
Connection Diagram
2 1 3
Maximum Ratings and Characteristics
Absolute Maximum Ratings
Item Repetitive peak reverse voltage Repetitive peak surge reverse voltage Isolation voltage Average output current Surge current Operating junction temperature Storage temperature Symbol VRRM VRSM Viso IO IFSM Tj Tstg tw=500ns, duty=1/40 Terminals to Case, AC. 1min. duty=1/2, Tc=80C Square wave Sine wave 10ms Conditions
Rating 100 100 1500 30* 180 +150 -40 to +150
Unit V V V A A C C
Electrical Characteristics (Ta=25C Unless otherwise specified )
Item Forward voltage drop ** Reverse current ** Thermal resistance Symbol VF IR Rth(j-c) Conditions IF=10A VR=VRRM Junction to case
* Out put current of centertap full wave connection.
Max. 0.80 20.0 2.0 Unit V mA C/W
** Rating per element
Mechanical Characteristics
Mounting torque Weight Recommended torque 0.3 to 0.5 2.3 N*m g
(100V / 30A TO-22OF15)
Characteristics
100
YG808C10R
Forward Characteristic
(typ.)
10
3
Reverse Characteristic (typ.)
Tj=150 C
o
Forward Current
10
Tj=150 C Tj=125 C Tj=100 C Tj=25 C
o o o
o
(mA)
10
2
Tj=125 C
o
o
(A)
Tj=100 C
Reverse Current
10
1
10
0
1
Tj=25 C
o
IF
10
-1
IR
0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
10
-2
0
10
20
30
40
50
60
70
80
90
100 110
VF
Forward Voltage
(V)
VR
Reverse Voltage
(V)
28
Forward Power Dissipation
50
Reverse Power Dissipation
360
(W)
(W)
26 24 22 20 18 16 14 12 10 8 6 4
Square wave =60 o Square wave =120 o Sine wave =180 o Square wave =180 DC
o
Io
45 40
DC
VR
Forward Power Dissipation
360
Reverse Power Dissipation
35
30 25 20 15 10 5 0 0 10 20 30 40 50 60 70 80 90 100 110
=180
o
WF
Per 1element
0 0 2 4 6 8 10 12 14 16
Io
Average Forward Current
(A)
PR
2
VR
Reverse Voltage
(V)
160 150 140 130 120 110 100
Current Derating (Io-Tc)
Junction Capacitance Characteristic (typ.)
Junction Capacitance (pF) Cj
( C)
1000
o
Case Temperature
DC Sine wave =180 o Square wave =180 Square wave =120
360 Io
VR=50V
o o
90 80 70 60 50 40 30 20 10 0 0 5 10 15 20 25 30 35 40 45
100
Square wave =60
o
Tc
10 1 10 100 1000
Io
Average Output Current
(A)
:Conduction angle of forward current for each rectifier element
VR
Reverse Voltage
(V)
Io:Output current of center-tap full wave connection
(100V / 30A TO-22OF15)
YG808C10R
1000
Surge Capability
Peak Half - Wave Current I FSM
(A)
100 10 1 10 100
Number of Cycles at 50Hz
10
1
Transient Thermal Impedance
Transient Thermal Impedance
( C/W)
10
0
o
10
-1
10
-2
10
-3
10
-2
10
-1
10
0
10
1
10
2
t
Time
(sec.)

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