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FJPF3835
FJPF3835
Power Amplifier
* High Current Capability : IC=8A * High Power Dissipation * Wide S.O.A
1
TO-220F 2.Collector 3.Emitter
1.Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25C unless otherwise noted
Symbol
VCBO VCEO VEBO IC ICP PC TJ TSTG
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Collector Dissipation (TC=25C) Junction Temperature Storage Temperature
Value 200 120 8 8 16 30 150 - 55 ~ 150
Units V V V A A W C C
Electrical Characteristics TC=25C unless otherwise noted
Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) VBE(sat) fT Cob tON tF tSTG
* Pulse Test : PW=20s
Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current
* DC
Test Condition IC=5mA, IE=0 IC=10mA, RBE= IE=5mA, IC=0 VCB=80V, IE=0 VEB=4V, IC=0 VCE=4V, IC=3A IC=3A, IB=0.3A IC=3A, IB=0.3A VCE=5V, IC=1A VCB=10V, f=1MHz VCC=20V, IC=1A=10IB1=-10IB2 RL=20
Min. 200 120 8
Typ.
Max.
Units V V V
0.1 0.1 120 250 0.5 1.2 30 210 0.26 0.68 6.68
mA mA V V MHz pF s s s
Current Gain
Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Turn On Time Fall Time Storage Time
(c)2004 Fairchild Semiconductor Corporation
Rev. A, May 2004
FJPF3835
Typical Characteristics
7
1000
IB = 35mA
6
VCE = 4V
IC [A], COLLECTOR CURRENT
hFE, DC CURRENT GAIN
5
TC = 125 C
o
TC = 75 C
o
4
100
TC = - 25 C
o
TC = 25 C
o
3
IB = 10mA
2
IB = 5mA
1
0 0 2 4 6 8
10 0.01
0.1
1
10
VCE [V], COLLECTOR-EMITTER VOLTAGE
IC [A], COLLECTOR CURRENT
Figure 1. Static Characterstic
Figure 2. DC current Gain
1
10
VCE(sat) [V], SATURATION VOLTAGE
IC = 10 IB
IC = 10 IB
0.1
o
TC = - 25 C TC = 25 C o TC = 75 C
o o
VBE(sat), SATURATION VOLTAGE
1
TC = - 25 C TC = 75 C
o
o
TC = 25 C
o
0.01
TC = 125 C
TC = 125 C
o
1E-3 0.01
0.1
1
10
0.1 0.01
0.1
1
10
IC [A], COLLECTOR CURRENT
IC [A], COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter Saturation Voltage
100
60
IC[A], COLLECTOR CURRENT
10
IC MAX. (DC) 10ms
1
PC[W], POWER DISSIPATION
IC MAX. (Pulse)
100ms
50
40
30
20
0.1
Single Pulse o TC=25[ C]
0.01 0.1 1 10 100
10
0 0 25 50
o
75
100
125
150
175
VCE[V], COLLECTOR-EMITTER VOLTAGE
TC[ C], CASE TEMPERATURE
Figure 5. Safe Operating Area
Figure 6. Power Derating
(c)2004 Fairchild Semiconductor Corporation
Rev. A, May 2004
FJPF3835
Package Dimensions
TO-220F
3.30 0.10
10.16 0.20 (7.00)
o3.18 0.10
2.54 0.20 (0.70)
6.68 0.20
15.80 0.20
(1.00x45)
MAX1.47
9.75 0.30
0.80 0.10
(3 ) 0
0.35 0.10 2.54TYP [2.54 0.20]
#1 0.50 -0.05 2.54TYP [2.54 0.20]
4.70 0.20
+0.10
2.76 0.20
9.40 0.20
Dimensions in Millimeters
(c)2004 Fairchild Semiconductor Corporation Rev. A, May 2004
15.87 0.20
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM FACT Quiet SeriesTM ActiveArrayTM FAST(R) FASTrTM BottomlessTM FPSTM CoolFETTM CROSSVOLTTM FRFETTM GlobalOptoisolatorTM DOMETM GTOTM EcoSPARKTM HiSeCTM E2CMOSTM EnSignaTM I2CTM i-LoTM FACTTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM DISCLAIMER
ImpliedDisconnectTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM
PACMANTM POPTM Power247TM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SILENT SWITCHER(R) SMART STARTTM
SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) VCXTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness. provided in the labeling, can be reasonably expected to result in significant injury to the user.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
(c)2004 Fairchild Semiconductor Corporation
Rev. I10

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