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Transistors 2SC5863 Silicon NPN epitaxial planar type Unit: mm For general amplification 0.40+0.10 -0.05 3 1.50+0.25 -0.05 2.8+0.2 -0.3 0.16+0.10 -0.06 (0.95) (0.95) 1.90.1 2.90+0.20 -0.05 Absolute Maximum Ratings Ta = 25C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 300 300 7 70 100 200 150 -55 to +150 Unit V V V mA mA mW C C 10 1.1+0.2 -0.1 1.1+0.3 -0.1 (0.65) * High collector-emitter voltage (Base open) VCEO * High transition frequency fT 1 2 1 : Base 2 : Emitter 3 : Collector EIAJ : SC-59 Mini3-G1 Package Marking Symbol 7H Electrical Characteristics Ta = 25C 3C Parameter Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-emitter cutoff current (Base open) Forward current transfer ratio * Collector-emitter saturation voltage Collector output capacitance (Common base, input open circuited) Transition frequency Symbol VCEO VEBO ICEO hFE VCE(sat) Cob fT Conditions IC = 100 A, IB = 0 IE = 1 A, IC = 0 VCE = 120 V, IB = 0 VCE = 10 V, IC = 5 mA IC = 50 mA, IB = 5 mA VCB = 10 V, IE = 0, f = 1 MHz VCB = 10 V, IE = -10 mA, f = 200 MHz 50 80 60 Min 300 7 1 220 1.2 10 Typ Max Unit V V A V pF MHz Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank hFE Q 60 to 150 R 100 to 220 0 to 0.1 0.40.2 Features 5 Publication date: November 2002 SJC00290AED 1 2SC5863 PC Ta 250 80 70 Ta = 25C IC VCE 120 IC VBE VCE = 10 V Collector power dissipation PC (mW) 200 Collector current IC (mA) Collector current IC (mA) 150 0.9 mA IB = 1.0 mA 0.8 mA 0.7 mA 0.6 mA 60 0.5 mA 0.3 mA 50 0.4 mA 0.2 mA 40 30 20 10 100 Ta = 85C 80 25C -25C 60 100 0.1 mA 40 50 20 0 0 0 20 40 60 80 100 120 140 160 0 2 4 6 8 10 12 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Ambient temperature Ta (C) Collector-emitter voltage VCE (V) Base-emitter voltage VBE (V) VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) 10 IC / IB = 10 hFE IC VCE = 10 V Ta = 85C Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 100 f = 1 MHz Ta = 25C 200 Forward current transfer ratio hFE 160 1 Ta = 85C 25C 0.1 -25C 120 25C 10 80 -25C 40 0.01 0.1 1 10 100 1 000 0 1 10 100 1 0 10 20 30 40 Collector current IC (mA) Collector current IC (mA) Collector-base voltage VCB (V) 2 SJC00290AED Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 JUL |
Price & Availability of 2SC5863
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