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Transistor
2SD1423, 2SD1423A
Silicon NPN epitaxial planer type
For low-frequency amplification Complementary to 2SB1030 and 2SB1030A
Unit: mm
4.00.2
3.00.2
s Features
q q
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SD1423 2SD1423A 2SD1423 VCBO VCEO VEBO ICP IC PC Tj Tstg Symbol
(Ta=25C)
0.70.1 2.00.2
marking 1 2 3
30 60 25 50 7 1 0.5 300 150 -55 ~ +150
V
emitter voltage 2SD1423A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
V V A A mW C C
1:Emitter 2:Collector 3:Base
1.27 1.27 2.540.15
EIAJ:SC-72 New S Type Package
s Electrical Characteristics
Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage 2SD1423 2SD1423A 2SD1423 2SD1423A
(Ta=25C)
Symbol ICBO ICEO VCBO VCEO VEBO hFE1*1 hFE2 VCE(sat) fT Cob Conditions VCB = 20V, IE = 0 VCE = 20V, IB = 0 IC = 10A, IE = 0 IC = 2mA, IB = 0 IE = 10A, IC = 0 VCE = 10V, IC = 150mA*2 VCE = 10V, IC = 500mA*2 IC = 300mA, IB = 30mA*2 VCB = 10V, IE = -50mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz 200 6
*2
+0.2 0.45-0.1
Ratings
Unit
15.60.5
Optimum for high-density mounting. Allowing supply with the radial taping.
min
typ
max 0.1 1
Unit A A V
30 60 25 50 7 85 40 0.6 340
V V
Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance
V MHz
15
pF
Pulse measurement
*1h
FE1
Rank classification
Q 85 ~ 170 R 120 ~ 240 S 170 ~ 340
Rank hFE1
1
Transistor
PC -- Ta
500 1200 Ta=25C 1000
2SD1423, 2SD1423A
IC -- VCE
Collector to emitter saturation voltage VCE(sat) (V)
100 30 10 3 1 Ta=75C 0.3 0.1 0.03 0.01 0.01 0.03 25C -25C
VCE(sat) -- IC
IC/IB=10
Collector power dissipation PC (mW)
Collector current IC (mA)
400
800 IB=10mA 9mA 8mA 7mA 6mA 5mA 4mA 3mA 2mA 200 1mA
300
600
200
400
100
0 0 20 40 60 80 100 120 140 160
0 0 2 4 6 8 10 12
0.1
0.3
1
3
10
Ambient temperature Ta (C)
Collector to emitter voltage VCE (V)
Collector current IC (A)
VBE(sat) -- IC
100
hFE -- IC
IC/IB=10 300 VCE=10V 160
fT -- I E
VCB=10V Ta=25C
Base to emitter saturation voltage VBE(sat) (V)
250 Ta=75C 200 25C -25C
Transition frequency fT (MHz)
0.3 1 3 10
30 10 3 1 0.3 0.1 0.03 0.01 0.01 0.03 Ta=-25C 75C
Forward current transfer ratio hFE
140 120 100 80 60 40 20
25C
150
100
50
0.1
0.3
1
3
10
0 0.01 0.03
0.1
0 - 0.1 - 0.3
-1
-3
-10
-30
-100
Collector current IC (A)
Collector current IC (A)
Emitter current IE (mA)
Cob -- VCB
10
Collector output capacitance Cob (pF)
IE=0 f=1MHz Ta=25C 8
6
4
2
0 1 3 10 30 100
Collector to base voltage VCB (V)
2
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2001 MAR

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