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Transistor
2SD1423, 2SD1423A
Silicon NPN epitaxial planer type
For low-frequency amplification Complementary to 2SB1030 and 2SB1030A
4.00.2 2.00.2
Unit: mm
q
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SD1423 2SD1423A 2SD1423 VCBO VCEO VEBO ICP IC PC Tj Tstg Symbol
(Ta=25C)
Ratings 30 60 25 50 7 1 0.5 300 150 -55 ~ +150 Unit V
0.45+0.20 -0.10
15.60.5
(0.8)
q
Optimum for high-density mounting. Allowing supply with the radial taping.
0.75 max.
7.6
s Features
(0.8) 3.00.2
(2.5) (2.5)
0.45+0.20 -0.10 0.70.1
emitter voltage 2SD1423A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
V
1 2 3
V A A mW C C
1:Emitter 2:Collector 3:Base
NS-B1 Package
s Electrical Characteristics
Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage 2SD1423 2SD1423A 2SD1423 2SD1423A
(Ta=25C)
Symbol ICBO ICEO VCBO VCEO VEBO hFE1*1 hFE2 VCE(sat) fT Cob Conditions VCB = 20V, IE = 0 VCE = 20V, IB = 0 IC = 10A, IE = 0 IC = 2mA, IB = 0 IE = 10A, IC = 0 VCE = 10V, IC = 150mA*2 VCE = 10V, IC = 500mA*2 IC = 300mA, IB = 30mA*2 VCB = 10V, IE = -50mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz 200 6
*2
min
typ
max 0.1 1
Unit A A V
30 60 25 50 7 85 40 0.6 340
V V
Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance
V MHz
15
pF
Pulse measurement
*1h
FE1
Rank classification
Q 85 ~ 170 R 120 ~ 240 S 170 ~ 340
Rank hFE1
614
Transistor
PC -- Ta
500 1200 Ta=25C 1000
2SD1423, 2SD1423A
IC -- VCE
Collector to emitter saturation voltage VCE(sat) (V)
100 30 10 3 1 Ta=75C 0.3 0.1 0.03 0.01 0.01 0.03 25C -25C
VCE(sat) -- IC
IC/IB=10
Collector power dissipation PC (mW)
Collector current IC (mA)
400
800 IB=10mA 9mA 8mA 7mA 6mA 5mA 4mA 3mA 2mA 200 1mA
300
600
200
400
100
0 0 20 40 60 80 100 120 140 160
0 0 2 4 6 8 10 12
0.1
0.3
1
3
10
Ambient temperature Ta (C)
Collector to emitter voltage VCE (V)
Collector current IC (A)
VBE(sat) -- IC
100
hFE -- IC
IC/IB=10 300 VCE=10V 160
fT -- I E
VCB=10V Ta=25C
Base to emitter saturation voltage VBE(sat) (V)
250 Ta=75C 200 25C -25C
Transition frequency fT (MHz)
0.3 1 3 10
30 10 3 1 0.3 0.1 0.03 0.01 0.01 0.03 Ta=-25C 75C
Forward current transfer ratio hFE
140 120 100 80 60 40 20
25C
150
100
50
0.1
0.3
1
3
10
0 0.01 0.03
0.1
0 - 0.1 - 0.3
-1
-3
-10
-30
-100
Collector current IC (A)
Collector current IC (A)
Emitter current IE (mA)
Cob -- VCB
10
Collector output capacitance Cob (pF)
IE=0 f=1MHz Ta=25C 8
6
4
2
0 1 3 10 30 100
Collector to base voltage VCB (V)
615
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(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. (3) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (4) The products and product specifications described in this material are subject to change without notice for reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, redundant design is recommended, so that such equipment may not violate relevant laws or regulations because of the function of our products. (6) When using products for which dry packing is required, observe the conditions (including shelf life and after-unpacking standby time) agreed upon when specification sheets are individually exchanged. (7) No part of this material may be reprinted or reproduced by any means without written permission from our company.
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A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications. Due to modification or other reasons, any information contained in this material, such as available product types, technical data, and so on, is subject to change without notice. Customers are advised to contact our semiconductor sales office and obtain the latest information before starting precise technical research and/or purchasing activities. B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any liability for any damages arising from any errors etc. that may appear in this material. C. These materials are solely intended for a customer's individual use. Therefore, without the prior written approval of Panasonic, any other use such as reproducing, selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited.
2001 MAR

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