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| Ordering number : ENN6961 MCH5802 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode MCH5802 DC / DC Converter Applications Features * Package Dimensions Composite type with a P-Channel Sillicon MOSFET unit : mm (MCH3308) and a Schottky Barrier Diode (SBS006M) 2195 contained in one package facilitating high-density mounting. [MOSFET] * Low ON-resistance. * Ultrahigh-speed switching. * 4V drive. [SBD] * Short reverse recovery time. * Low forward voltage. 0.25 2.1 1.6 0.25 [MCH5802] 0.3 0.15 4 5 0.65 2.0 0.07 3 2 1 5 4 0.85 1 : Gate 2 : Source 3 : Anode 4 : Cathode 5 : Drain SANYO : MCPH5 1 2 3 Specifications Absolute Maximum Ratings at Ta=25C Parameter [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature [SBD] Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature VRRM VRSM IO IFSM Tj Tstg 50Hz sine wave, 1 cycle 30 30 0.5 10 --55 to +125 --55 to +125 V V A A C C VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% Mounted on a ceramic board (900mm2!0.8mm) 1unit -30 20 --1 --4 0.8 150 --55 to +125 V V A A W C C Symbol Conditions Ratings Unit Marking : QB Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 62501 TS IM TA-3176 No.6961-1/5 MCH5802 Electrical Characteristics at Ta=25C Parameter [MOSFET] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage [SBD] Reverse Voltage Forward Voltage Reverse Current Interterminal Capacitance Reverse Recovery Time VR VF 1 VF 2 IR C trr IR=0.5mA IF=0.3A IF=0.5A VR=10V VR=10V, f=1MHz IF=IR=100mA, See specified Test Circuit. 30 0.35 0.42 20 10 0.40 0.47 200 V V V A pF ns V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID=--1mA, VGS=0 VDS=--30V, VGS=0 VGS=16V, VDS=0 VDS=--10V, ID=--1mA VDS=--10V, ID=--500mA ID=--500mA, VGS=-10V ID=--300mA, VGS=-4V VDS=--10V, f=1MHz VDS=--10V, f=1MHz VDS=--10V, f=1MHz See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit VDS=--10V, VGS=--10V, ID=-1A VDS=--10V, VGS=--10V, ID=-1A VDS=--10V, VGS=--10V, ID=-1A IS=--1A, VGS=0 --1.2 570 820 430 780 80 15 13 7 20 15 7 2.6 0.5 0.6 --0.9 --1.5 560 1090 --30 --1 10 --2.6 V A A V mS m m pF pF pF ns ns ns ns nC nC nC V Symbol Conditions Ratings min typ max Unit Electrical Connection (Top view) D C G : Gate S : Source A : Anode C : Cathode D : Drain G S A Switching Time Test Circuit [MOSFET] trr Test Circuit [SBD] VIN 0V --10V VIN VDD= --15V Duty10% 100mA 10mA D PW=10s D.C.1% VOUT 10s --5V G 100mA ID= --500mA RL=30 50 100 10 trr MCH5802 P.G 50 S No.6961-2/5 MCH5802 --2.0 ID -- VDS --6 V [MOSFET] --1.4 ID -- VGS VDS= --10V [MOSFET] Drain Current, ID -- A Drain Current, ID -- A --1.5 --8 V --5 V --4V --1.2 --1.0 --0.8 --1.0 --1 0 VGS= --3V C --0.5 --0.4 --0.2 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0 IT03181 Drain-to-Source Voltage, VDS -- V RDS(on) -- VGS [MOSFET] 0 0 --0.5 --1.0 --1.5 --2.0 --2.5 --25 C 25 Ta= 7 V 5C --0.6 --3.0 Ta= --25 C 75 C --3.5 1400 120 IT03182 Gate-to-Source Voltage, VGS -- V RDS(on) -- Ta [MOSFET] Ta=25C Static Drain-to-Source On-State Resistance, RDS(on) -- m 1200 Static Drain-to-Source On-State Resistance, RDS(on) -- m 100 1000 ID= --0.3A 800 --0.5A 80 -I D= , VG 0.3A --4 S= V 60 600 40 .5A I D= --0 = --10V , V GS 400 200 0 0 --1 --2 --3 --4 --5 --6 --7 --8 --9 --10 IT03183 Gate-to-Source Voltage, VGS -- V yfs -- ID [MOSFET] 20 0 --60 --40 --20 0 20 40 60 80 100 120 140 25 C --4.0 160 IT03184 --1.4 --30 IT03188 Ambient Temperature, Ta -- C 3 2 --1.0 3 IF -- VSD Forward Transfer Admittance, yfs -- S VDS= --10V 2 [MOSFET] VGS=0 Forward Current, IF -- A 7 5 3 2 --0.1 7 5 3 2 1.0 7 5 C 25 2 0.1 --0.01 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 Drain Current, ID -- A 100 7 IT03185 SW Time -- ID [MOSFET] 100 7 5 Switching Time, SW Time -- ns 5 3 VDD= --15V VGS= --10V IT03186 Diode Forward Voltage, VSD -- V Ciss, Coss, Crss -- VDS [MOSFET] Ciss f=1MHz tr Ciss, Coss, Crss -- pF 3 2 2 td(off) 10 7 5 3 2 10 7 5 3 2 td(on) 1.0 --0.01 1.0 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Drain Current, ID -- A 5 7 --10 IT03187 0 --5 --10 Ta=75 C 25C --25C 3 5 --2 a= T C 75 C tf Coss Crss --15 --20 --25 Drain-to-Source Voltage, VDS -- V No.6961-3/5 MCH5802 --10 VGS -- Qg VDS= --10V ID= --1.4A [MOSFET] --10 7 5 3 2 ASO IDP= --4A [MOSFET] <10s 10 1m s Gate-to-Source Voltage, VGS -- V --8 Drain Current, ID -- A 0 s --6 --1.0 7 5 3 2 --0.1 7 5 3 2 ID= --1A 10 m D 10 s C 0m op s er --4 at io n --2 0 0 0.5 1.0 1.5 2.0 2.5 IT03189 --0.01 --0.01 Operation in this area is limited by RDS(on). Ta=25C Single pulse Mounted on a ceramic board(900mm2!0.8mm)1unit 23 5 7--0.1 23 5 7--1.0 23 5 7 --10 23 5 Total Gate Charge, Qg -- nC 1.0 PD -- Ta Drain-to-Source Voltage, VDS -- V IT03190 [MOSFET] Allowable Power Dissipation, PD -- W 0.8 M ou nt ed on 0.6 ac er am ic bo ar 0.4 d( 90 0m m2 !0 0.2 .8m m )1 un it 160 0 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- C 10 7 5 IT03191 IF -- VF [SBD] Reverse Current, IR -- mA Forward Current, IF -- A 3 2 1.0 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 0 5 10 IR -- VR [SBD] 1 Ta= 25 C 10 0 C 7 5 3 2 0.1 7 5 3 2 0.01 0 = Ta 5 12 C 100C 2 50 C 5C 75C 50C 25C 75 C 0.2 0.4 0.6 0.8 1.0 IT00632 15 20 25 30 IT00633 Forward Voltage, VF -- V Average Forward Power Dissipation, PF(AV) -- W 0.4 0.35 0.3 0.25 0.2 PF(AV) -- IO Reverse Voltage, VR -- V 100 7 [SBD] (3) C -- VR [SBD] f=1MHz Interterminal Capacitance, C -- pF (1) Rectangular wave =60 (2) Rectangular wave =120 (3) Rectangular wave =180 (4) Sine wave =180 (1) (2) (4) 5 3 2 10 7 5 3 2 1.0 1.0 Rectangular wave 0.15 0.1 0.05 0 0 0.1 0.2 0.3 0.4 180 360 0.5 Sine wave 360 0.6 0.7 IT00634 2 3 5 7 10 2 3 5 Average Forward Current, IO -- A Reverse Voltage, VR -- V 7 100 IT00635 No.6961-4/5 MCH5802 12 IS -- t IS [SBD] Surge Forward Current, IFSM(Peak) -- A Current waveform 50Hz sine wave 10 8 20ms t 6 4 2 0 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Time, t -- s IT00636 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of June, 2001. Specifications and information herein are subject to change without notice. PS No.6961-5/5 |
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