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HSU276
Silicon Schottky Barrier Diode for Mixer
ADE-208-078F(Z) Rev 6 June 1996 Features
* * High forward current, Low capacitance. Ultra small Resin Package (URP) is suitablefor high density surface mounting and high speed assembly.
Ordering Information
Type No. HSU276 Laser Mark 3 Package Code URP
Outline
Cathode mark Mark 1
3
2 1. Cathode 2. Anode
HSU276
Absolute Maximum Ratings (Ta = 25C)
Item Reverse voltage Average rectified current Junction temperature Storage temperature Symbol VR IO Tj Tstg Value 3 30 125 -55A+125 Unit V mA C C
Electrical Characteristics (Ta = 25C)
Item Reverse voltage Reverse current Forward current Capacitance ESD-Capability*1 Symbol VR IR IF C Min 3 Typ Max Unit V A mA pF V Test Condition IR = 1 mA VR = 0.5V VF = 0.5V VR = 0.5V, f = 1 MHz C=200pF , Both forward and reverse direction 1 pulse.
A\ A\ A\ A\ A\
A\
50
A\
35
A\
0.85
A\
30
A\
A\
Notes 1. Failure criterion ; IR 100A at VR =0.5 V
HSU276
Main Characteristic
-2
10
10
-2
Reverse current I R (A)
Forward current IF
(A)
10
-3
10
-3
10
-4
10
-4
10
-5
10
-5
10-6
0
0.1
0.2
0.3
0.4
10 -6
0
1
2
3
4
5
Forward voltage V F (V) Fig.1 Forward current Vs. Forward voltage
Reverse voltage V R (V) Fig.2 Reverse current Vs. Reverse voltage
f=1MHz
10
(pF) Capacitance C
1.0
10
-1
10
-1
1.0 Reverse voltage V R (V)
10
Fig.3 Capacitance Vs. Reverse voltage
HSU276
Package Dimensions
Unit : mm
Cathode Mark 1.250.15 0.30.15
3
1 1.70.15 2.50.15 2
1. Cathode 2. Anode Hitachi Code JEDECCode EIAJCode Weight(g) URP -- -- 0.004 0 to 0.10 0.90.15

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