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| DISCRETE SEMICONDUCTORS DATA SHEET BSP225 P-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor FEATURES * Low RDS(on) * Direct interface to C-MOS, TTL, etc. * High-speed switching * No secondary breakdown. DESCRIPTION P-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope, intended for use in relay, high-speed and line transformer drivers. PINNING - SOT223 PIN 1 2 3 4 gate drain source drain 1 Top view 2 3 MAM121 BSP225 QUICK REFERENCE DATA SYMBOL -VDS -ID RDS(on) -VGS(th) PARAMETER drain-source voltage drain current drain-source on-resistance gate-source threshold voltage DC value -ID = 200 mA -VGS = 10 V -ID = 1 mA VGS = VDS CONDITIONS MAX. 250 225 15 2.8 UNIT V mA V PIN CONFIGURATION handbook, halfpage 4 d DESCRIPTION g s Fig.1 Simplified outline and symbol. April 1995 2 Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL -VDS VGSO -ID -IDM Ptot Tstg Tj Note PARAMETER drain-source voltage gate-source voltage drain current drain current total power dissipation storage temperature range junction temperature open drain DC value peak value up to Tamb = 25 C (note 1) CONDITIONS MIN. - - - - - -65 - BSP225 MAX. 250 20 225 600 1.5 150 150 UNIT V V mA mA W C C 1. Device mounted on an epoxy printed-circuit board, 40 x 40 x 1.5 mm, mounting pad for the drain lead minimum 6 cm2. THERMAL RESISTANCE SYMBOL Rth j-a Note 1. Device mounted on an epoxy printed-circuit board, 40 x 40 x 1.5 mm, mounting pad for the drain lead minimum 6 cm2. from junction to ambient (note 1) PARAMETER VALUE 83.3 UNIT K/W April 1995 3 Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL -V(BR)DSS -IDSS IGSS -VGS(th) RDS(on) Yfs Ciss PARAMETER drain-source breakdown voltage drain-source leakage current gate-source leakage current gate-source threshold voltage drain-source on-resistance transfer admittance input capacitance CONDITIONS -ID = 10 A VGS = 0 -VDS = 200 V VGS = 0 VDS = 0 VGS = 20 V -ID = 1 mA VGS = VDS -ID = 200 mA -VGS = 10 V -ID = 200 mA -VDS = 25 V -VDS = 25 V -VGS = 0 f = 1 MHz -VDS = 25 V -VGS = 0 f = 1 MHz -VDS = 25 V -VGS = 0 f = 1 MHz -ID = 250 mA -VDD = 50 V -VGS = 0 to 10 V -ID = 250 mA -VDD = 50 V -VGS = 0 to 10 V MIN. 250 - - 0.8 - 100 - TYP. - - - - 10 200 65 BSP225 MAX. UNIT - 1 100 2.8 15 - 90 V A nA V mS pF Coss output capacitance - 20 30 pF Crss feedback capacitance - 6 15 pF Switching times (see Figs 2 and 3) ton turn-on time - 5 10 ns toff turn-off time - 20 30 ns April 1995 4 Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor BSP225 handbook, halfpage VDD = -50 V handbook, halfpage 10 % INPUT 90 % 0V -10 V ID 50 MBB689 10 % OUTPUT 90 % ton toff MBB690 Fig.2 Switching time test circuit. Fig.3 Input and output waveforms. handbook, 2 MBB693 Ptot (W) 1.6 handbook, halfpage -1 MDA706 ID (A) -0.8 VGS = -10 V -6 V 1.2 -0.6 -5 V 0.8 -0.4 -4 V 0.4 -0.2 -3 V 0 0 50 100 150 200 Tamb (C) 0 0 -5 -10 -15 -20 -25 VDS (V) Fig.4 Power derating curve. Fig.5 Typical output characteristics; Tj = 25 C. April 1995 5 Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor BSP225 handbook, halfpage -1 MDA707 ID (A) -0.8 -103 handbook, halfpage MDA708 VGS = -10 V -5 V ID (mA) -4 V -0.6 -102 -0.4 -0.2 0 0 -2 -4 -6 -8 -10 VGS (V) -10 8 12 16 20 24 28 RDSon () Fig.6 Typical transfer characteristic; -VDS = 10 V; Tj = 25 C. Fig.7 Typical on-resistance as a function of drain current; Tj = 25 C; RDS(on) = f(ID). handbook, halfpage 160 MDA734 handbook, halfpage 2.5 k 2 MDA710 C (pF) 120 1.5 80 Ciss 1 40 Coss Crss 0 0 -5 -10 -15 -20 -25 VDS (V) 0 -50 0 50 100 150 0.5 Tj (C) Fig.9 Fig.8 Typical capacitances as a function of drain-source voltage; VGS = 0; f = 1 MHz; Tj = 25 C. Temperature coefficient of drain-source on-resistance; R DS ( on ) at T j k = ---------------------------------------------- ; R DS ( on ) at 25 C typical RDS(on) at -200 mA/-10 V. April 1995 6 Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor BSP225 handbook, halfpage 1.1 k 1 MDA711 0.9 0.8 0.7 -50 0 50 100 Tj (C) 150 Fig.10 Temperature coefficient of gate-source threshold voltage; - V GS ( th ) at T j k = ----------------------------------------------- ; - V GS ( th ) at 25 C typical VGS(th) at -1 mA. April 1995 7 Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 4 leads BSP225 SOT223 D B E A X c y HE b1 vMA 4 Q A A1 1 e1 e 2 bp 3 wM B detail X Lp 0 2 scale 4 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.8 1.5 A1 0.10 0.01 bp 0.80 0.60 b1 3.1 2.9 c 0.32 0.22 D 6.7 6.3 E 3.7 3.3 e 4.6 e1 2.3 HE 7.3 6.7 Lp 1.1 0.7 Q 0.95 0.85 v 0.2 w 0.1 y 0.1 OUTLINE VERSION SOT223 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 96-11-11 97-02-28 April 1995 8 Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS BSP225 This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. April 1995 9 Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor NOTES BSP225 April 1995 10 Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor NOTES BSP225 April 1995 11 Philips Semiconductors - a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. +48 22 612 2831, Fax. +48 22 612 2327 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000, Tel. +27 11 470 5911, Fax. +27 11 470 5494 South America: Rua do Rocio 220, 5th floor, Suite 51, 04552-903 Sao Paulo, SAO PAULO - SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 829 1849 Spain: Balmes 22, 08007 BARCELONA, Tel. +34 3 301 6312, Fax. +34 3 301 4107 Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 632 2000, Fax. +46 8 632 2745 Switzerland: Allmendstrasse 140, CH-8027 ZURICH, Tel. +41 1 488 2686, Fax. +41 1 481 7730 Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. +66 2 745 4090, Fax. +66 2 398 0793 Turkey: Talatpasa Cad. No. 5, 80640 GULTEPE/ISTANBUL, Tel. +90 212 279 2770, Fax. +90 212 282 6707 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 625 344, Fax.+381 11 635 777 For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1997 Internet: http://www.semiconductors.philips.com SCA54 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 137107/00/01/pp12 Date of release: April 1995 Document order number: 9397 750 02483 |
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