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| NTD2955 Power MOSFET -60 V, -12 A, P-Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low-voltage, high- speed switching applications in power supplies, converters, and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer an additional safety margin against unexpected voltage transients. Features http://onsemi.com V(BR)DSS -60 V RDS(on) TYP 155 mW @ -10 V, 6 A ID MAX -12 A * Avalanche Energy Specified * IDSS and VDS(on) Specified at Elevated Temperature * Designed for Low-Voltage, High-Speed Switching Applications and * to Withstand High Energy in the Avalanche and Commutation Modes Pb-Free Packages are Available G P-Channel D MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Rating Drain-to-Source Voltage Gate-to-Source Voltage - Continuous - Non-repetitive (tp 10 ms) Drain Current Drain Current - Continuous @ Ta = 25C Drain Current - Single Pulse (tp 10 ms) Total Power Dissipation @ Ta = 25C Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Energy - Starting TJ = 25C (VDD = 25 Vdc, VGS = 10 Vdc, Peak IL = 12 Apk, L = 3.0 mH, RG = 25 W) Thermal Resistance - Junction-to-Case - Junction-to-Ambient (Note 1) - Junction-to-Ambient (Note 2) Maximum Lead Temperature for Soldering Purposes, 1/8 in. from case for 10 seconds Symbol VDSS VGS VGSM ID IDM PD TJ, Tstg EAS Value -60 20 25 -12 -36 55 -55 to 175 216 Unit Vdc Vdc Vpk Adc Apk W C mJ 12 3 2 1 3 Drain Gate Source 4 Drain AYW NT2955 123 Gate Drain Source NT2955 A Y W Device Code = Assembly Location = Year = Work Week RqJC RqJA RqJA TL 2.73 71.4 100 260 C/W 4 DPAK-3 CASE 369D STYLE 2 1 2 S MARKING DIAGRAMS 4 Drain DPAK CASE 369C STYLE 2 AYW NT2955 4 C 3 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. When surface mounted to an FR4 board using 1 in pad size (Cu area = 1.127 in2). 2. When surface mounted to an FR4 board using the minimum recommended pad size (Cu area = 0.412 in2). ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. (c) Semiconductor Components Industries, LLC, 2004 1 October, 2004 - Rev. 7 Publication Order Number: NTD2955/D NTD2955 ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage (Note 3) (VGS = 0 Vdc, ID = -0.25 mA) (Positive Temperature Coefficient) Zero Gate Voltage Drain Current (VGS = 0 Vdc, VDS = -60 Vdc, TJ = 25C) (VGS = 0 Vdc, VDS = -60 Vdc, TJ = 150C) Gate-Body Leakage Current (VGS = 20 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS (Note 3) Gate Threshold Voltage (VDS = VGS, ID = -250 mAdc) (Negative Temperature Coefficient) Static Drain-Source On-State Resistance (VGS = -10 Vdc, ID = -6.0 Adc) Drain-to-Source On-Voltage (VGS = -10 Vdc, ID = -12 Adc) (VGS = -10 Vdc, ID = -6.0 Adc, TJ = 150C) Forward Transconductance (VDS = 10 Vdc, ID = 6.0 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Notes 3 and 4) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Charge (VDS = -48 Vdc, VGS = -10 Vdc, ID = -12 A) DRAIN-SOURCE DIODE CHARACTERISTICS (Note 3) Diode Forward On-Voltage (IS = 12 Adc, VGS = 0 V) (IS = 12 Adc, VGS = 0 V, TJ = 150C) Reverse Recovery Time (IS = 12 A dIS/dt = 100 A/ ,VGS = 0 V) A, A/ms V VSD - - trr ta tb Reverse Recovery Stored Charge 3. Indicates Pulse Test: Pulse Width 300 ms, Duty Cycle 2%. 4. Switching characteristics are independent of operating junction temperature. QRR - - - - -1.6 -1.3 50 40 10 0.10 - - - mC -2.5 - ns Vdc (VDD = -30 Vdc, ID = -12 A, VGS = -10 V, RG = 9.1 W) td(on) tr td(off) tf QT QGS QGD - - - - - - - 10 45 26 48 15 4.0 7.0 20 85 40 90 30 - - nC ns (VDS = -25 Vdc, VGS = 0 Vdc, F = 1.0 MHz) Ciss Coss Crss - - - 500 150 50 750 250 100 pF VGS(th) -2.0 - RDS(on) - VDS(on) -1.86 - gFS Symbol Min Typ Max Unit V(BR)DSS -60 - IDSS - - IGSS - - - - -10 -100 -100 - 67 - - Vdc mV/C mAdc nAdc Vdc -2.8 4.5 0.155 -4.0 - 0.180 Vdc -2.6 -2.0 - Mhos mV/C W 8.0 http://onsemi.com 2 NTD2955 TYPICAL PERFORMANCE CURVES (TJ = 25C unless otherwise noted) 25 24 22 20 18 16 14 12 10 8 6 4 2 0 2 3 4 5 6 7 8 9 10 TJ = 25C VGS = -10 V -9.5 V -9 V -8 V -7 V -6.5 V -6 V -ID, DRAIN CURRENT (A) VDS -10 V TJ = - 55C 25C 125C -ID, DRAIN CURRENT (A) 20 15 10 -5.5 V -5 V 5 0 0 1 2 3 4 5 6 7 8 9 10 -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) -VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 1. On-Region Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE () RDS(on), DRAIN-TO-SOURCE RESISTANCE () Figure 2. Transfer Characteristics 0.50 0.45 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0 0 3 6 15 12 9 18 -ID, DRAIN CURRENT (AMPS) 21 24 - 55C 25C TJ = 125C VGS = -10 V 0.250 0.225 0.200 0.175 0.150 0.125 0.100 0.075 0.050 0 3 6 12 15 9 18 -ID, DRAIN CURRENT (AMPS) 21 24 -15 V VGS = -10 V TJ = 25C RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) Figure 3. On-Resistance versus Drain Current and Temperature Figure 4. On-Resistance versus Drain Current and Gate Voltage 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 - 50 - 25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) 150 175 VGS = -10 V ID = -6 A -IDSS, LEAKAGE (nA) 1000 VGS = 0 V 100 TJ = 125C 10 100C 1 5 10 15 20 25 30 35 40 45 50 55 -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 60 Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-To-Source Leakage Current versus Voltage http://onsemi.com 3 NTD2955 -VGS, GATE-TO-SOURCE VOLTAGE (V) 1200 C, CAPACITANCE (pF) 1000 800 600 400 200 0 10 Coss Crss 5 -VGS 0 -VDS 5 10 15 20 25 Ciss Crss 15 VDS QT VGS 7.5 5 2.5 0 0 2 4 6 8 10 12 14 QGS QGD 30 20 10 0 16 60 50 40 -VDS, DRAIN-TO-SOURCE VOLTAGE (V) VDS = 0 V VGS = 0 V TJ = 25C 12.5 10 ID = 12 A TJ = 25C Ciss QT, TOTAL GATE CHARGE (nC) GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (V) Figure 7. Capacitance Variation Figure 8. Gate-To-Source and Drain-To-Source Voltage versus Total Charge 15 -IS, SOURCE CURRENT (AMPS) VGS = 0 V TJ = 25C 10 1000 VDD = -30 V ID = -12 A VGS = -10 V TJ = 25C tf tr t, TIME (ns) 100 td(off) 10 td(on) 5 1 1 10 RG, GATE RESISTANCE (W) 100 0 0 0.25 0.5 0.75 1 1.25 1.5 1.75 -VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation versus Gate Resistance -VDS, DRAIN-TO-SOURCE VOLTAGE (V) 100 Figure 10. Diode Forward Voltage versus Current VGS = -15 V SINGLE PULSE TC = 25C 10 100 ms 1 ms 1 di/dt IS 10 ms dc trr ta tb TIME tp 100 RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.1 0.1 1 10 0.25 IS IS -VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Diode Reverse Recovery Waveform http://onsemi.com 4 NTD2955 1.0 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE 0.01 1.0E-05 1.0E-04 1.0E-03 1.0E-02 t, TIME (s) t2 DUTY CYCLE, D = t1/t2 1.0E-01 t1 P(pk) RqJC(t) = r(t) RqJC D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RqJC(t) 1.0E+00 1.0E+01 Figure 13. Thermal Response http://onsemi.com 5 NTD2955 ORDERING INFORMATION Device NTD2955 NTD2955G NTD2955-001 NTD2955-1G NTD2955T4 NTD2955T4G Package DPAK DPAK (Pb-Free) DPAK-3 DPAK-3 (Pb-Free) DPAK DPAK (Pb-Free) Shipping 75 Units / Rail 75 Units / Rail 75 Units / Rail 75 Units / Rail 2500 / Tape & Reel 2500 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 6 NTD2955 PACKAGE DIMENSIONS DPAK CASE 369C-01 ISSUE O -T- B V R 4 SEATING PLANE C E DIM A B C D E F G H J K L R S U V Z INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.180 0.215 0.025 0.040 0.020 --- 0.035 0.050 0.155 --- MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.57 5.45 0.63 1.01 0.51 --- 0.89 1.27 3.93 --- A S 1 2 3 Z U K F L D G 2 PL J H 0.13 (0.005) T M STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.101 5.80 0.228 1.6 0.063 6.172 0.243 3.0 0.118 SCALE 3:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 7 NTD2955 PACKAGE DIMENSIONS DPAK-3 CASE 369D-01 ISSUE B C E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.180 0.215 0.025 0.040 0.035 0.050 0.155 --- MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.45 0.63 1.01 0.89 1.27 3.93 --- B V R 4 Z A 3 S -T- SEATING PLANE 1 2 K F D G 3 PL J H 0.13 (0.005) M DIM A B C D E F G H J K R S V Z T STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.101 5.80 0.228 1.6 0.063 6.172 0.243 3.0 0.118 SCALE 3:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 8 NTD2955/D |
Price & Availability of NTD2955
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