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| Datasheet File OCR Text: |
| MRA1417-6H NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The MRA1417-6H is a Common Base Device Designed for Class C Amplifier Applications in L-Band FM Microwave Links. FEATURES INCLUDE: * Gold Metallization * Emitter Ballasting * Input Matching PACKAGE STYLE .250 2L FLG (B) MAXIMUM RATINGS IC VCBO PDISS TJ TSTG JC O O 1.0 A 50 V 19 W @ TC = 25 C -65 C to +200 C -65 C to +200 C 9.0 C/W O O O O 1 = COLLECTOR 2 = BASE 3 = EMITTER CHARACTERISTICS SYMBOL BVCBO BVCES BVEBO hFE Cob PG C IC = 25 mA IC = 25 mA TC = 25 C O TEST CONDITIONS MINIMUM TYPICAL MAXIMUM 50 55 3.5 UNITS V V V IE = 3.0 mA VCE = 5.0 V VCB = 28 V VCE = 28 V POUT = 6.0 W IC = 100 mA f = 1.0 MHz f = 1400 - 1700 MHz 20 6.5 7.2 7.5 40 100 --pF dB % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 |
Price & Availability of MRA1417-6
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