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| Transistors with built-in Resistor UNR511x Series (UN511x Series) Silicon PNP epitaxial planar type Unit: mm (0.425) For digital circuits Features * Costs can be reduced through downsizing of the equipment and reduction of the number of parts * S-Mini type package, allowing automatic insertion through the tape/ magazine packing 0.3+0.1 -0.0 3 0.15+0.10 -0.05 1.250.10 2.10.1 5 1 2 0.20.1 0.90.1 0.9+0.2 -0.1 (0.65) (0.65) 1.30.1 Resistance by Part Number * * * * * * * * * * * * * * * * * * * * Marking symbol UNR5110 (UN5110) 6L UNR5111 (UN5111) 6A UNR5112 (UN5112) 6B UNR5113 (UN5113) 6C UNR5114 (UN5114) 6D UNR5115 (UN5115) 6E UNR5116 (UN5116) 6F UNR5117 (UN5117) 6H UNR5118 (UN5118) 6I UNR5119 (UN5119) 6K UNR511D (UN511D) 6M UNR511E (UN511E) 6N UNR511F (UN511F) 6O UNR511H (UN511H) 6P UNR511L (UN511L) 6Q UNR511M (UN511M) EI UNR511N (UN511N) EW UNR511T (UN511T) EY UNR511V (UN511V) FC UNR511Z (UN511Z) FE (R1) 47 k 10 k 22 k 47 k 10 k 10 k 4.7 k 22 k 0.51 k 1 k 47 k 47 k 4.7 k 2.2 k 4.7 k 2.2 k 4.7 k 22 k 2.2 k 4.7 k (R2) 10 k 22 k 47 k 47 k 5.1 k 10 k 10 k 22 k 10 k 10 k 4.7 k 47 k 47 k 47 k 2.2 k 22 k 10 2.00.2 1: Base 2: Emitter 3: Collector EIAJ: SC-70 SMini3-G1 Package Internal Connection R1 B R2 E 0 to 0.1 C Absolute Maximum Ratings Ta = 25C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg Rating -50 -50 -100 150 150 -55 to +150 Unit V V mA mW C C Note) The part numbers in the parenthesis show conventional part number. Publication date: December 2003 SJH00022BED 1 UNR511x Series Electrical Characteristics Ta = 25C 3C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base UNR5110/5115/5116/5117 Symbol VCBO VCEO ICBO ICEO IEBO Conditions IC = -10 A, IE = 0 IC = -2 mA, IB = 0 VCB = -50 V, IE = 0 VCE = -50 V, IB = 0 VEB = -6 V, IC = 0 Min -50 -50 - 0.1 - 0.5 - 0.01 - 0.1 - 0.2 - 0.4 - 0.5 -1.0 -1.5 -2.0 hFE VCE = -10 V, IC = -5 mA 6 20 30 35 60 60 80 80 160 VCE(sat) VOH VOL IC = -10 mA, IB = - 0.3 mA IC = -10 mA, IB = -1.5 mA VCC = -5 V, VB = - 0.5 V, RL = 1 k VCC = -5 V, VB = -2.5 V, RL = 1 k VCC = -5 V, VB = -3.5 V, RL = 1 k VCC = -5 V, VB = -10 V, RL = 1 k VCC = -5 V, VB = -6 V, RL = 1 k fT R1 VCB = -10 V, IE = 1 mA, f = 200 MHz VCB = -10 V, IE = 2 mA, f = 200 MHz -30% 80 150 0.51 1.0 2.2 4.7 10 22 47 R1/R2 0.08 0.047 0.1 0.10 0.21 0.12 +30% k MHz -4.9 - 0.2 V V 400 460 - 0.25 V 200 20 Typ Max Unit V V A A mA cutoff current UNR5113 (Collector open) UNR5112/5114/511D/ 511E/511M/511N/511T UNR511Z UNR5111 UNR511F/511H UNR5119 UNR5118/511L/511V Forward current UNR511V transfer ratio UNR5118/511L UNR5119/511D/511F/511H UNR5111 UNR5112/511E UNR511Z UNR5113/5114/511M UNR511N/511T UNR5110 */5115 */5116 */5117 * Collector-emitter saturation voltage UNR511V Output voltage high-level Output voltage low-level UNR5113 UNR511D UNR511E Transition frequency UNR5116 Input resistance UNR5118 UNR5119 UNR511H/511M/511V UNR5116/511F/511L 511N/511Z UNR5111/5114/5115 UNR5112/5117/511T UNR5110/5113/511D/511E Resistance ratio UNR511M UNR511N UNR5118/5119 UNR511Z 2 SJH00022BED UNR511x Series Electrical Characteristics (continued) Ta = 25C 3C Parameter Resistance ratio UNR5114 UNR511H UNR511T UNR511F UNR511V UNR5111/5112/5113/511L UNR511E UNR511D 0.8 1.70 3.7 0.37 Symbol Conditions Min 0.17 0.17 Typ 0.21 0.22 0.47 0.47 1.0 1.0 2.14 4.7 1.2 2.60 5.7 0.57 Max 0.25 0.27 Unit Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank hFE Q 160 to 260 R 210 to 340 S 290 to 460 No-rank 160 to 460 Common characteristics chart PT Ta 250 Total power dissipation PT (mW) 200 150 100 50 0 0 40 80 120 160 Ambient temperature Ta (C) Characteristics charts of UNR5110 IC VCE Ta = 25C IB = -1.0 mA - 0.9 mA -100 - 0.8 mA - 0.7 mA - 0.6 mA - 0.5 mA -80 - 0.4 mA - 0.3 mA -60 - 0.2 mA - 0.1 mA -20 VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) -100 IC / IB = 10 hFE IC 400 VCE = -10 V -120 -10 Forward current transfer ratio hFE Collector current IC (mA) 300 Ta = 75C -1 Ta = 75C 25C - 0.1 -25C 200 25C -25C -40 100 0 0 -2 -4 -6 -8 -10 -12 - 0.01 -0.1 -1 -10 -100 0 -1 -10 -100 -1 000 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) SJH00022BED 3 UNR511x Series Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 6 f = 1 MHz IE = 0 Ta = 25C -104 IO VIN VO = -5 V Ta = 25C -100 VIN IO VO = - 0.2 V Ta = 25C 5 Output current IO (A) 4 Input voltage VIN (V) -103 -10 3 -102 -1 2 -10 - 0.1 1 0 - 0.1 -1 -10 -100 -1 - 0.4 - 0.6 - 0.8 -1.0 -1.2 -1.4 - 0.01 - 0.1 -1 -10 -100 Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UNR5111 IC VCE Collector-emitter saturation voltage VCE(sat) (V) -160 IB = -1.0 mA Ta = 25C VCE(sat) IC -100 IC / IB = 10 160 VCE = -10 V hFE IC Ta = 75C - 0.9 mA Forward current transfer ratio hFE 25C 120 -25C 80 Collector current IC (mA) -120 - 0.8 mA - 0.7 mA - 0.6 mA -10 -80 - 0.5 mA - 0.4 mA - 0.3 mA -1 Ta = 75C 25C - 0.1 -25C -40 40 - 0.2 mA - 0.1 mA 0 0 -2 -4 -6 -8 -10 -12 - 0.01 - 0.1 -1 -10 -100 0 -1 -10 -100 -1 000 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 6 f = 1 MHz IE = 0 Ta = 25C -104 IO VIN VO = -5 V Ta = 25C VIN IO -100 VO = - 0.2 V Ta = 25C 5 4 Output current IO (A) Input voltage VIN (V) -103 -10 3 -102 -1 2 -10 - 0.1 1 - 0.01 - 0.1 0 - 0.1 -1 -10 -100 -1 - 0.4 - 0.6 - 0.8 -1.0 -1.2 -1.4 -1 -10 -100 Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 4 SJH00022BED UNR511x Series Characteristics charts of UNR5112 IC VCE Collector-emitter saturation voltage VCE(sat) (V) -160 Ta = 25C IB = -1.0 mA - 0.9 mA - 0.8 mA - 0.7 mA - 0.6 mA - 0.5 mA -80 - 0.4 mA - 0.3 mA -40 - 0.2 mA - 0.1 mA 0 -100 VCE(sat) IC IC / IB = 10 hFE IC 400 VCE = -10 V Collector current IC (mA) -120 -10 Forward current transfer ratio hFE 300 -1 25C - 0.1 -25C Ta = 75C Ta = 75C 200 25C -25C 100 0 -2 -4 -6 -8 -10 -12 - 0.01 - 0.1 -1 -10 -100 0 -1 -10 -100 -1 000 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 6 f = 1 MHz IE = 0 Ta = 25C -104 IO VIN VO = -5 V Ta = 25C VIN IO -100 VO = - 0.2 V Ta = 25C 5 Output current IO (A) 4 Input voltage VIN (V) -103 -10 3 -102 -1 2 -10 - 0.1 1 0 - 0.1 -1 -10 -100 -1 - 0.4 - 0.6 - 0.8 -1.0 -1.2 -1.4 - 0.01 - 0.1 -1 -10 -100 Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UNR5113 IC VCE IB = -1.0 mA Ta = 25C VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) -100 IC / IB = 10 400 hFE IC VCE = -10 V -160 - 0.9 mA - 0.8 mA - 0.7 mA - 0.6 mA - 0.5 mA -80 - 0.4 mA - 0.3 mA -40 - 0.2 mA - 0.1 mA 0 -2 -4 -6 -8 -10 -12 Forward current transfer ratio hFE Collector current IC (mA) -120 -10 300 Ta = 75C 25C 200 -25C -1 Ta = 75C 25C - 0.1 -25C 100 0 - 0.01 - 0.1 -1 -10 -100 0 -1 -10 -100 -1 000 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) SJH00022BED 5 UNR511x Series Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 6 f = 1 MHz IE = 0 Ta = 25C -104 IO VIN VO = -5 V Ta = 25C -100 VIN IO VO = - 0.2 V Ta = 25C 5 Output current IO (A) 4 Input voltage VIN (V) -103 -10 3 -102 -1 2 -10 - 0.1 1 0 - 0.1 -1 -10 -100 -1 - 0.4 - 0.6 - 0.8 -1.0 -1.2 -1.4 - 0.01 - 0.1 -1 -10 -100 Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UNR5114 IC VCE Collector-emitter saturation voltage VCE(sat) (V) -160 Ta = 25C IB = -1.0 mA - 0.9 mA - 0.8 mA - 0.7 mA - 0.6 mA - 0.5 mA -80 - 0.4 mA - 0.3 mA -40 - 0.2 mA - 0.1 mA 0 -100 VCE(sat) IC IC / IB = 10 hFE IC 400 VCE = -10 V Collector current IC (mA) -120 -10 Forward current transfer ratio hFE 300 Ta = 75C 200 25C -25C 100 -1 Ta = 75C - 0.1 25C -25C -1 -10 -100 0 -2 -4 -6 -8 -10 -12 - 0.01 - 0.1 0 -1 -10 -100 -1 000 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 6 f = 1 MHz IE = 0 Ta = 25C -104 IO VIN VO = -5 V Ta = 25C -1 000 VIN IO VO = - 0.2 V Ta = 25C 5 Output current IO (A) 4 3 -102 Input voltage VIN (V) - 0.6 - 0.8 -1.0 -1.2 -1.4 -103 -100 -10 2 -10 -1 1 0 - 0.1 -1 -10 -100 -1 - 0.4 - 0.1 - 0.1 -1 -10 -100 Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 6 SJH00022BED UNR511x Series Characteristics charts of UNR5115 IC VCE Collector-emitter saturation voltage VCE(sat) (V) -160 IB = -1.0 mA Ta = 25C - 0.9 mA - 0.8 mA - 0.7 mA - 0.6 mA - 0.5 mA -80 - 0.4 mA - 0.3 mA - 0.2 mA -40 - 0.1 mA -100 VCE(sat) IC IC / IB = 10 400 hFE IC VCE = -10 V Collector current IC (mA) -120 -10 Forward current transfer ratio hFE 300 Ta = 75C -1 Ta = 75C - 0.1 25C 200 25C -25C 100 -25C -1 -10 -100 0 -1 -10 -100 -1 000 0 0 -2 -4 -6 -8 -10 -12 - 0.01 -0.1 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 6 f = 1 MHz IE = 0 Ta = 25C IO VIN -104 VO = -5 V Ta = 25C -100 VIN IO VO = - 0.2 V Ta = 25C 5 Output current IO (A) 4 Input voltage VIN (V) -103 -10 3 -102 -1 2 -10 - 0.1 1 0 - 0.1 -1 -10 -100 -1 - 0.4 - 0.6 - 0.8 -1.0 -1.2 -1.4 - 0.01 - 0.1 -1 -10 -100 Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UNR5116 IC VCE Collector-emitter saturation voltage VCE(sat) (V) -160 IB = -1.0 mA Ta = 25C - 0.9 mA - 0.8 mA - 0.7 mA - 0.6 mA - 0.5 mA -80 - 0.4 mA - 0.3 mA -40 - 0.2 mA - 0.1 mA 0 0 -2 -4 -6 -8 -10 -12 -100 VCE(sat) IC IC / IB = 10 400 hFE IC VCE = -10 V Collector current IC (mA) -120 -10 Forward current transfer ratio hFE 300 Ta = 75C -1 Ta = 75C - 0.1 25C 200 25C -25C 100 -25C -1 -10 -100 0 -1 -10 -100 -1 000 - 0.01 - 0.1 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) SJH00022BED 7 UNR511x Series Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 6 f = 1 MHz IE = 0 Ta = 25C IO VIN -104 VO = -5 V Ta = 25C -100 VIN IO VO = - 0.2 V Ta = 25C 5 Output current IO (A) 4 Input voltage VIN (V) -103 -10 3 -102 -1 2 -10 - 0.1 1 0 - 0.1 -1 -10 -100 -1 - 0.4 - 0.6 - 0.8 -1.0 -1.2 -1.4 - 0.01 - 0.1 -1 -10 -100 Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UNR5117 IC VCE Ta = 25C IB = -1.0 mA - 0.9 mA - 0.8 mA - 0.7 mA - 0.6 mA - 0.5 mA - 0.4 mA VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) -100 IC / IB = 10 400 hFE IC VCE = -10 V -120 Collector current IC (mA) -10 Forward current transfer ratio hFE -100 300 -80 -60 - 0.3 mA - 0.2 mA - 0.1 mA -1 25C - 0.1 -25C Ta = 75C 200 Ta = 75C -40 25C 100 -25C -20 0 0 -2 -4 -6 -8 -10 -12 - 0.01 - 0.1 -1 -10 -100 0 -1 -10 -100 -1 000 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 6 f = 1 MHz IE = 0 Ta = 25C -104 IO VIN VO = -5 V Ta = 25C VIN IO -100 VO = - 0.2 V Ta = 25C 5 Output current IO (A) 4 3 -102 Input voltage VIN (V) - 0.6 - 0.8 -1.0 -1.2 -1.4 -103 -10 -1 2 -10 - 0.1 1 -1 - 0.4 0 -0.1 -1 -10 -100 - 0.01 - 0.1 -1 -10 -100 Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 8 SJH00022BED UNR511x Series Characteristics charts of UNR5118 IC VCE Ta = 25C VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) -100 IC / IB = 10 hFE IC 160 VCE = -10 V -240 Collector current IC (mA) -160 IB = - 1.0 mA - 0.9 mA - 0.8 mA - 0.7 mA -10 Forward current transfer ratio hFE -200 120 -120 - 0.6 mA - 0.5 mA - 0.4 mA - 0.3 mA - 0.2 mA - 0.1 mA 0 0 -2 -4 -6 -8 -10 -12 -1 Ta = 75C 80 25C -25C 40 Ta = 75C 25C -80 - 0.1 -25C -1 -10 -100 -40 - 0.01 - 0.1 0 -1 -10 -100 -1 000 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 6 f = 1 MHz IE = 0 Ta = 25C IO VIN -104 VO = -5 V Ta = 25C -100 VIN IO VO = - 0.2 V Ta = 25C 5 Output current IO (A) 4 3 -102 Input voltage VIN (V) - 0.6 - 0.8 -1.0 -1.2 -1.4 -103 -10 -1 2 -10 - 0.1 1 0 - 0.1 -1 -10 -100 -1 - 0.4 - 0.01 - 0.1 -1 -10 -100 Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UNR5119 IC VCE Ta = 25C VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) -100 IC / IB = 10 160 hFE IC VCE = -10 V -240 Collector current IC (mA) -160 IB = -1.0 mA - 0.9 mA - 0.8 mA - 0.7 mA -10 Forward current transfer ratio hFE -200 120 Ta = 75C 80 -120 -1 Ta = 75C 25C -25C -80 -40 0 - 0.6 mA - 0.5 mA - 0.4 mA - 0.3 mA - 0.2 mA - 0.1 mA 0 -2 -4 -6 -8 -10 -12 25C - 0.1 -25C -1 -10 -100 40 - 0.01 - 0.1 0 -1 -10 -100 -1 000 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) SJH00022BED 9 UNR511x Series Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 6 f = 1 MHz IE = 0 Ta = 25C -104 IO VIN VO = -5 V Ta = 25C VIN IO -100 VO = -0.2 V Ta = 25C 5 Output current IO (A) 4 Input voltage VIN (V) -103 -10 3 -102 -1 2 -10 - 0.1 1 0 - 0.1 -1 -10 -100 -1 - 0.4 - 0.6 - 0.8 -1.0 -1.2 -1.4 - 0.01 - 0.1 -1 -10 -100 Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UNR511D IC VCE Ta = 25C VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) -100 IC / IB = 10 160 hFE IC VCE = -10 V -60 Forward current transfer ratio hFE -50 IB = - 1.0 mA - 0.9 mA - 0.8 mA Collector current IC (mA) -10 120 Ta = 75C -40 - 0.3 mA - 0.2 mA - 0.7 mA - 0.6 mA - 0.5 mA - 0.4 mA - 0.1 mA 25C 80 -25C -30 -1 Ta = 75C - 0.1 25C -20 40 -10 -25C -1 -10 -100 0 -1 -10 -100 -1 000 0 0 -2 -4 -6 -8 -10 -12 - 0.01 - 0.1 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 6 f = 1 MHz IE = 0 Ta = 25C -104 IO VIN VO = -5 V Ta = 25C -100 VIN IO VO = - 0.2 V Ta = 25C 5 Output current IO (A) 4 Input voltage VIN (V) -103 -10 3 -102 -1 2 -10 - 0.1 1 0 - 0.1 -1 -10 -100 -1 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 - 0.01 - 0.1 -1 -10 -100 Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 10 SJH00022BED UNR511x Series Characteristics charts of UNR511E IC VCE IB = -1.0 mA Ta = 25C - 0.9 mA - 0.8 mA - 0.7 mA VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) -100 IC / IB = 10 400 hFE IC VCE = -10 V -60 Collector current IC (mA) -10 Forward current transfer ratio hFE -50 300 -40 - 0.3 mA -30 - 0.6 mA - 0.5 mA - 0.4 mA - 0.2 mA -1 25C - 0.1 -25C Ta = 75C 200 Ta = 75C 100 25C -25C -20 - 0.1 mA -10 0 0 -2 -4 -6 -8 -10 -12 - 0.01 - 0.1 -1 -10 -100 0 -1 -10 -100 -1 000 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 6 f = 1 MHz IE = 0 Ta = 25C IO VIN -104 VO = -5 V Ta = 25C -100 VIN IO VO = - 0.2 V Ta = 25C 5 Output current IO (A) 4 3 -102 Input voltage VIN (V) -2.0 -2.5 -3.0 -3.5 -4.0 -103 -10 -1 2 -10 - 0.1 1 0 - 0.1 -1 -10 -100 -1 -1.5 - 0.01 - 0.1 -1 -10 -100 Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UNR511F IC VCE Collector-emitter saturation voltage VCE(sat) (V) -240 Ta = 25C IB = -1.0 mA - 0.9 mA - 0.8 mA - 0.7 mA - 0.6 mA -100 VCE(sat) IC IC / IB = 10 160 hFE IC VCE = -10 V -10 Forward current transfer ratio hFE -200 Collector current IC (mA) 120 Ta = 75C 25C 80 -25C -160 -120 - 0.5 mA - 0.4 mA - 0.3 mA - 0.2 mA - 0.1 mA -10 -12 -1 Ta = 75C 25C - 0.1 -25C -1 -10 -100 -80 40 -40 0 0 -2 -4 -6 -8 - 0.01 - 0.1 0 -1 -10 -100 -1 000 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) SJH00022BED 11 UNR511x Series Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 6 f = 1 MHz IE = 0 Ta = 25C IO VIN -104 VO = -5 V Ta = 25C VIN IO -100 VO = - 0.2 V Ta = 25C 5 Output current IO (A) 4 Input voltage VIN (V) -103 -10 3 -102 -1 2 -10 - 0.1 1 0 - 0.1 -1 -10 -100 -1 - 0.4 - 0.6 - 0.8 -1.0 -1.2 -1.4 - 0.01 - 0.1 -1 -10 -100 Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UNR511H IC VCE Collector-emitter saturation voltage VCE(sat) (V) -120 Ta = 25C VCE(sat) IC -100 IC / IB = 10 hFE IC 240 VCE = -10 V Collector current IC (mA) -10 -80 IB = - 0.5 mA - 0.4 mA - 0.3 mA Forward current transfer ratio hFE -100 200 160 Ta = 75C 120 25C 80 -60 -1 Ta = 75C 25C -0.1 -25C -40 - 0.2 mA -20 - 0.1 mA 0 0 -2 -4 -6 -8 -10 -12 -25C 40 -0.01 -1 -10 -100 -1 000 0 -0.1 -1 -10 -100 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 6 f = 1 MHz IE = 0 Ta = 25C -100 VIN IO VO = - 0.2 V Ta = 25C 5 4 Input voltage VIN (V) -10 -100 -10 3 -1 2 - 0.1 1 0 -1 - 0.01 - 0.1 -1 -10 -100 Collector-base voltage VCB (V) Output current IO (mA) 12 SJH00022BED UNR511x Series Characteristics charts of UNR511L IC VCE Ta = 25C VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) -100 IC / IB = 10 240 hFE IC VCE = -10 V -240 Collector current IC (mA) -10 -160 IB = -1.0 mA - 0.8 mA - 0.6 mA - 0.4 mA - 0.2 mA 0 0 -2 -4 -6 -8 -10 -12 Forward current transfer ratio hFE -200 200 160 -120 -1 120 -80 Ta = 75C 25C -25C Ta = 75C 25C -25C 80 - 0.1 -40 40 - 0.01 -1 -10 -100 -1 000 0 -1 -10 -100 -1 000 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 6 f = 1 MHz IE = 0 Ta = 25C -100 VIN IO VO = - 0.2 V Ta = 25C 5 4 Input voltage VIN (V) -10 3 -1 2 - 0.1 1 0 -1 -10 -100 - 0.01 - 0.1 -1 -10 -100 Collector-base voltage VCB (V) Output current IO (mA) Characteristics charts of UNR511M IC VCE Collector-emitter saturation voltage VCE(sat) (V) 240 Ta = 25C IB = -1.0 mA - 0.9 mA - 0.8 mA - 0.7 mA - 0.6 mA -10 VCE(sat) IC IC / IB = 10 hFE IC 500 VCE = -10 V 200 Forward current transfer ratio hFE 400 Collector current IC (mA) -1 Ta = 75C 25C 160 300 120 - 0.5 mA - 0.4 mA - 0.3 mA - 0.2 mA - 0.1 mA 0 0 -2 -4 -6 -8 -10 -12 - 0.1 80 -25C 200 Ta = 75C 25C -25C - 0.01 100 40 - 0.001 -1 -10 -100 -1 000 0 -1 -10 -100 -1 000 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) SJH00022BED 13 UNR511x Series Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 10 f = 1 MHz IE = 0 Ta = 25C 8 IO VIN 10-4 VO = -5 V Ta = 25C VIN IO -100 VO = - 0.2 V Ta = 25C Output current IO (A) 10-3 6 10-2 Input voltage VIN (V) - 0.6 - 0.8 -1.0 -1.2 -1.4 -10 -1 4 10-1 - 0.1 2 0 - 0.1 -1 -10 -100 1 - 0.4 - 0.01 - 0.1 -1 -10 -100 Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UNR511N IC VCE Collector-emitter saturation voltage VCE(sat) (V) -200 Ta = 25C VCE(sat) IC -10 IC / IB = 10 300 hFE IC VCE = -10 V Collector current IC (mA) -150 IB = -1.0 mA - 0.9 mA - 0.8 mA - 0.7 mA - 0.6 mA - 0.5 mA - 0.4 mA Forward current transfer ratio hFE 250 Ta = 75C 200 25C 150 -25C -1 -100 Ta = 75C 25C - 0.1 100 -50 - 0.3 mA - 0.2 mA - 0.1 mA -25C 50 0 0 -2 -4 -6 -8 -10 -12 - 0.01 -1 -10 -100 -1 000 0 -1 -10 -100 -1 000 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 6 f = 1 MHz IE = 0 Ta = 25C IO VIN -104 VO = -5 V Ta = 25C -100 VIN IO VO = - 0.2 V Ta = 25C 5 Output current IO (A) 4 3 -102 Input voltage VIN (V) -103 -10 -1 2 -10 - 0.1 1 0 -1 -10 -100 -1 - 0.4 - 0.6 - 0.8 -1.0 -1.2 -1.4 - 0.01 - 0.1 -1 -10 -100 Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 14 SJH00022BED UNR511x Series Characteristics charts of UNR511T IC VCE Collector-emitter saturation voltage VCE(sat) (V) -200 Ta = 25C -10 VCE(sat) IC IC / IB = 10 hFE IC 300 VCE = -10 V Forward current transfer ratio hFE 250 Ta = 75C 200 25C 150 -25C 100 Collector current IC (mA) -150 IB = -1.0 mA - 0.9 mA - 0.8 mA - 0.7 mA - 0.6 mA - 0.5 mA - 0.4 mA - 0.3 mA - 0.2 mA - 0.1 mA -1 -100 Ta = 75C 25C -25C - 0.1 -50 50 0 0 -2 -4 -6 -8 -10 -12 - 0.01 -1 -10 -100 -1 000 0 -1 -10 -100 -1 000 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) IO VIN -104 VO = -5 V Ta = 25C -100 VIN IO VO = - 0.2 V Ta = 25C Output current IO (A) Input voltage VIN (V) -103 -10 -102 -1 -10 - 0.1 -1 - 0.4 - 0.6 - 0.8 -1 -1.2 -1.4 - 0.01 - 0.1 -1 -10 -100 Input voltage VIN (V) Output current IO (mA) Characteristics charts of UNR511V IC VCE Collector-emitter saturation voltage VCE(sat) (V) -12 Ta = 25C IB = -1.0 mA - 0.9 mA - 0.8 mA - 0.7 mA -6 - 0.6 mA - 0.5 mA -4 - 0.4 mA - 0.3 mA - 0.2 mA - 0.1 mA 0 -2 -4 -6 -8 -10 -12 VCE(sat) IC -10 IC / IB = 10 12 Ta = 75C hFE IC VCE = -10 V Forward current transfer ratio hFE -10 10 Collector current IC (mA) -8 -1 Ta = 75C 25C -25C 25C 8 6 -25C - 0.1 4 -2 2 0 - 0.01 -1 -10 -100 -1 000 0 -1 -10 -100 -1 000 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) SJH00022BED 15 UNR511x Series IO VIN VO = -5 V Ta = 25C -100 -104 VIN IO VO = - 0.2 V Ta = 25C Output current IO (A) Input voltage VIN (V) -103 -10 -102 -1 -10 - 0.1 -1 - 0.4 - 0.6 - 0.8 -1.0 -1.2 -1.4 - 0.01 - 0.1 -1 -10 -100 Input voltage VIN (V) Output current IO (mA) Characteristics charts of UNR511Z IC VCE Collector-emitter saturation voltage VCE(sat) (V) -200 Ta = 25C -10 VCE(sat) IC IC / IB = 10 hFE IC 300 VCE = -10 V Collector current IC (mA) -150 IB = -1.0 mA - 0.9 mA - 0.8 mA - 0.7 mA - 0.6 mA - 0.5 mA - 0.4 mA - 0.3 mA - 0.2 mA 0 - 0.1 mA 0 -2 -4 -6 -8 -10 -12 Forward current transfer ratio hFE 250 -1 200 25C 150 Ta = 75C -100 Ta = 75C 25C -25C - 0.1 100 -25C -50 50 - 0.01 -1 -10 -100 -1 000 0 -1 -10 -100 -1 000 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 6 f = 1 MHz IE = 0 Ta = 25C -104 IO VIN VO = - 5 V Ta = 25C -100 VIN IO VO = 0.2 V Ta = 25C 5 Output current IO (A) 4 3 -102 Input voltage VIN (V) - 0.6 - 0.8 -1 -1.2 -1.4 -103 -10 -1 2 -10 - 0.1 1 0 -1 -10 -100 -1 - 0.4 - 0.01 - 0.1 -1 -10 -100 Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 16 SJH00022BED Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical information as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2003 SEP |
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