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| Transistor 2SD1423, 2SD1423A Silicon NPN epitaxial planer type For low-frequency amplification Complementary to 2SB1030 and 2SB1030A Unit: mm 4.00.2 3.00.2 s Features q q s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD1423 2SD1423A 2SD1423 VCBO VCEO VEBO ICP IC PC Tj Tstg Symbol (Ta=25C) 0.70.1 2.00.2 marking 1 2 3 30 60 25 50 7 1 0.5 300 150 -55 ~ +150 V emitter voltage 2SD1423A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature V V A A mW C C 1:Emitter 2:Collector 3:Base 1.27 1.27 2.540.15 EIAJ:SC-72 New S Type Package s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage 2SD1423 2SD1423A 2SD1423 2SD1423A (Ta=25C) Symbol ICBO ICEO VCBO VCEO VEBO hFE1*1 hFE2 VCE(sat) fT Cob Conditions VCB = 20V, IE = 0 VCE = 20V, IB = 0 IC = 10A, IE = 0 IC = 2mA, IB = 0 IE = 10A, IC = 0 VCE = 10V, IC = 150mA*2 VCE = 10V, IC = 500mA*2 IC = 300mA, IB = 30mA*2 VCB = 10V, IE = -50mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz 200 6 *2 +0.2 0.45-0.1 Ratings Unit 15.60.5 Optimum for high-density mounting. Allowing supply with the radial taping. min typ max 0.1 1 Unit A A V 30 60 25 50 7 85 40 0.6 340 V V Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance V MHz 15 pF Pulse measurement *1h FE1 Rank classification Q 85 ~ 170 R 120 ~ 240 S 170 ~ 340 Rank hFE1 1 Transistor PC -- Ta 500 1200 Ta=25C 1000 2SD1423, 2SD1423A IC -- VCE Collector to emitter saturation voltage VCE(sat) (V) 100 30 10 3 1 Ta=75C 0.3 0.1 0.03 0.01 0.01 0.03 25C -25C VCE(sat) -- IC IC/IB=10 Collector power dissipation PC (mW) Collector current IC (mA) 400 800 IB=10mA 9mA 8mA 7mA 6mA 5mA 4mA 3mA 2mA 200 1mA 300 600 200 400 100 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 12 0.1 0.3 1 3 10 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) -- IC 100 hFE -- IC IC/IB=10 300 VCE=10V 160 fT -- I E VCB=10V Ta=25C Base to emitter saturation voltage VBE(sat) (V) 250 Ta=75C 200 25C -25C Transition frequency fT (MHz) 0.3 1 3 10 30 10 3 1 0.3 0.1 0.03 0.01 0.01 0.03 Ta=-25C 75C Forward current transfer ratio hFE 140 120 100 80 60 40 20 25C 150 100 50 0.1 0.3 1 3 10 0 0.01 0.03 0.1 0 - 0.1 - 0.3 -1 -3 -10 -30 -100 Collector current IC (A) Collector current IC (A) Emitter current IE (mA) Cob -- VCB 10 Collector output capacitance Cob (pF) IE=0 f=1MHz Ta=25C 8 6 4 2 0 1 3 10 30 100 Collector to base voltage VCB (V) 2 |
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