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DISCRETE SEMICONDUCTORS
DATA SHEET
BSN304; BSN304A N-channel enhancement mode vertical D-MOS transistors
Product specification File under Discrete Semiconductors, SC13b April 1995
Philips Semiconductors
Product specification
N-channel enhancement mode vertical D-MOS transistors
FEATURES * Direct interface to C-MOS, TTL, etc. * High-speed switching * No secondary breakdown. DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a TO-92 variant envelope, intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer drivers. PINNING - TO-92 variant PIN BSN304 1 2 3 gate drain source DESCRIPTION QUICK REFERENCE DATA SYMBOL VDS ID Ptot VGSO RDS(on) VGS(off) PARAMETER drain-source voltage DC drain current gate-source voltage drain-source on-resistance gate-source cut-off voltage
BSN304; BSN304A
CONDITIONS
MIN. - -
MAX. 300 250 1 20 8 2 V mA W V V
total power dissipation up to Tamb = 25 C - open drain ID = 250 mA; VGS = 10 V ID = 1 mA; VGS = VDS - - 0.8
handbook, halfpage
d
1 2 3 g
MAM146
s
BSN304A 1 2 3 source gate drain Fig.1 Simplified outline and symbol.
April 1995
2
Philips Semiconductors
Product specification
N-channel enhancement mode vertical D-MOS transistors
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VDS VGSO ID IDM Ptot Tstg Tj PARAMETER drain-source voltage gate-source voltage DC drain current peak drain current total power dissipation storage temperature operating junction temperature up to Tamb = 25 C; note 1 open drain CONDITIONS
BSN304; BSN304A
MIN. - - - - - -65 -
MAX. 300 20 250 1 1 +150 150
UNIT V V mA A W C C
THERMAL RESISTANCE SYMBOL Rth j-a Note 1. Device mounted on an epoxy printed-circuit board, maximum lead length 4 mm; mounting pad for the drain lead minimum 10 mm x 10 mm. STATIC CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL V(BR)DSS IGSS VGS(th) RDS(on) IDSS Yfs Ciss Coss Crss PARAMETER drain-source breakdown voltage gate-source leakage current gate-source threshold voltage drain-source on-resistance drain-source leakage current transfer admittance input capacitance output capacitance feedback capacitance CONDITIONS ID = 10 A; VGS = 0 VGS = 20 V; VDS = 0 ID = 1 mA; VDS = VGS ID = 250 mA; VGS = 10 V ID = 20 mA; VGS = 2.4 V VDS = 240 V; VGS = 0 ID = 250 mA; VDS = 25 V VDS = 25 V; VGS = 0; f = 1 MHz VDS = 25 V; VGS = 0; f = 1 MHz VDS = 25 V; VGS = 0; f = 1 MHz MIN. 300 - 0.8 - - - 200 - - - TYP. MAX. UNIT - - - 6.7 7.9 - 380 57 15 2.6 - 100 2 8 14 100 - 90 30 15 V nA V nA mS pF pF pF PARAMETER from junction to ambient; note 1 THERMAL RESISTANCE 125 K/W
Switching times (see Figs 2 and 3) ton toff turn-on time turn-off time ID = 250 mA; VDD = 50 V; VGS = 0 to 10 V ID = 250 mA; VDD = 50 V; VGS = 10 to 0 V - - 2.5 17 10 30 ns ns
April 1995
3
Philips Semiconductors
Product specification
N-channel enhancement mode vertical D-MOS transistors
BSN304; BSN304A
handbook, halfpage
handbook, halfpage
90 %
VDD = 50 V
INPUT 10 %
90 %
10 V 0V ID 50
MSA631
OUTPUT 10 % ton toff
MBB692
Fig.2 Switching times test circuit.
Fig.3 Input and output waveforms.
handbook, halfpage
1.2
MRC238
handbook, halfpage
150
MRC234
Ptot (W) 0.8
C (pF) 100
Ciss 0.4 50
Coss Crss 0 0 50 100 150 200 Tamb (C) 0 0 5 10 15 25 20 VDS (V)
VGS = 0; f = 1 MHz; Tj = 25 C.
Fig.4 Power derating curve.
Fig.5
Capacitance as a function of drain-source voltage, typical values.
April 1995
4
Philips Semiconductors
Product specification
N-channel enhancement mode vertical D-MOS transistors
BSN304; BSN304A
handbook, halfpage
1.2
MRC237
handbook, halfpage
1
MRC243
ID (A) 0.8
P=1W
VGS = 10 V
5V 4V 3.5 V
ID (A) 0.8
0.6 3V 0.4 0.4 2.5 V 0.2 2V 0 0 4 8 VDS (V) 12 0 0 2 4 6 8 10 VGS (V)
Tj = 25 C.
VDS = 10 V; Tj = 25 C.
Fig.6 Typical output characteristics.
Fig.7 Typical transfer characteristics.
handbook, halfpage
30
MRC239
handbook, halfpage
25
MRC240
RDSon () 20
RDSon () 20
VGS = 2 V
2.5 V 3 V 3.5 V
15
10 10 5
10 V 4 V 5 V
0 10-2
10-1
ID (A)
1
0 0 2 4 6 8 10 VGS (V)
Tj = 25 C.
VDS = 100 mV; Tj = 25 C.
Fig.8
Drain-source on-resistance as a function of drain current, typical values.
Fig.9
Drain-source on-resistance as a function of gate-source voltage, typical values.
April 1995
5
Philips Semiconductors
Product specification
N-channel enhancement mode vertical D-MOS transistors
BSN304; BSN304A
103 handbook, full pagewidth Zth j-a (K/W) 102 = 0.5 0.2 10 0.1 0.05 0.02 0.01 1 0 P
MRC241
=
tp T
tp T
t
10-1 10-5
10-4
10-3
10-2
10-1
1
10
102 tp (s)
103
Fig.10 Transient thermal resistance from junction to ambient as a function of pulse time.
MRC242
handbook, halfpage
10
ID (A) 1 (1) tp = 10 s 100 s 1 ms 10 ms
10-1 P 10-2 tp 10-3 1 T 10 102 t
= T
tp DC
100 ms 1s
VDS (V)
103
= 0.01; Tamb = 25 C. (1) RDS(on) limitation.
Fig.11 SOAR curve.
April 1995
6
Philips Semiconductors
Product specification
N-channel enhancement mode vertical D-MOS transistors
BSN304; BSN304A
handbook, halfpage
2.5 k 2
MRC235
handbook, halfpage
1.25 k
MRC236
(1)
1
(2)
1.5
0.75
1
0.5
0.5
0.25
0 -50
0
50
100
Tj (C)
150
0 -50
0
50
100
Tj (C)
150
R DS ( on ) at T j k = ----------------------------------------------. R DS ( on ) at 25 C Typical RDS(on); (1) ID = 250 mA; VGS = 10 V. (2) ID = 20 mA; VGS = 2.4 V. V GS ( th ) at T j k = -------------------------------------------- . V GS ( th ) at 25 C
Fig.12 Temperature coefficient of drain-source on-resistance.
Fig.13 Temperature coefficient of gate-source threshold voltage.
April 1995
7
Philips Semiconductors
Product specification
N-channel enhancement mode vertical D-MOS transistors
PACKAGE OUTLINES Plastic single-ended leaded (through hole) package; 3 leads (on-circle)
BSN304; BSN304A
SOT54 variant
c
L2
E d A L b
1 2
D e1 e
3
b1
L1
0
2.5 scale
5 mm
DIMENSIONS (mm are the original dimensions) UNIT mm Notes 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT54 variant REFERENCES IEC JEDEC TO-92 EIAJ SC-43 EUROPEAN PROJECTION ISSUE DATE 97-04-14 A 5.2 5.0 b 0.48 0.40 b1 0.66 0.56 c 0.45 0.40 D 4.8 4.4 d 1.7 1.4 E 4.2 3.6 e 2.54 e1 1.27 L 14.5 12.7 L1(1) max 2.5 L2 max 2.5
April 1995
8
Philips Semiconductors
Product specification
N-channel enhancement mode vertical D-MOS transistors
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Application information
BSN304; BSN304A
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
April 1995
9
Philips Semiconductors
Product specification
N-channel enhancement mode vertical D-MOS transistors
NOTES
BSN304; BSN304A
April 1995
10
Philips Semiconductors
Product specification
N-channel enhancement mode vertical D-MOS transistors
NOTES
BSN304; BSN304A
April 1995
11
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For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1997
Internet: http://www.semiconductors.philips.com
SCA54
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
137107/00/01/pp12
Date of release: April 1995
Document order number:
9397 750 02464

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