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 Advanced Small Signal MOSFET
FEATURES
! Lower RDS(on) ! Improved Inductive Ruggedness ! Fast Switching Times ! Lower Input Capacitance ! Extended Safe Operating Area ! Improved High Temperature Reliability
2N7002MTF
BVDSS = 60 V RDS(on) = 5.0 ID = 200 mA
SOT-23
Product Summary
Part Number 2N7002 BVDSS 60V RDS(on) 5.0 ID 115mA
1.Gate 2. Source 3. Drain
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS PD TJ , TSTG Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25) Continuous Drain Current (TC=100) Drain Current-Pulsed Gate-to-Source Voltage Total Power Dissipation (TC=25) Linear Derating Factor Operating Junction and Storage Temperature Range
Value 60 115 73 800 20 0.2 0.16 - 55 to +150
Units V mA mA V W W/
Thermal Resistance
Symbol RJA Characteristic Junction-to-Ambient Typ. -Max. 62.5 Units /W
Rev. A1
2N7002MTF
Symbol BVDSS VGS(th) IGSS Characteristic Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Source Leakage, Forward Gate-Source Leakage, Reverse Min. 60 1.0 IDSS ID(ON) RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Drain-to-Source Leakage Current On-State Drain-Source Current Static Drain-Source On-State Resistance 0.5 0.08 500 5.0 50 25 5 20 20 ns pF A S Typ. -
N-CHANNEL Small Signal MOSFET
Electrical Characteristics (TC=25 unless otherwise specified)
Max. Units 2.5 100 nA -100 1.0 A V V Test Condition VGS = 0V, ID = 250A VDS = VGS, ID = 250A VGS = 20V VGS = -20V VGS = 40V VGS = 40V, TC = 125 VDS = 10V, VGS = 10V VGS = 10V, ID = 0.5A VDS = 15V, ID = 0.2A VDS = 25V, VGS = 0V, f = 1.0MHz
Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time
VDD = 30V, ID = 0.2A RG = 25
Source-Drain Diode Ratings and Characteristics
Symbol IS ISD VSD Characteristic Continuous Source Current Pulse Source Current Diode Forward Voltage Min. Typ. Max. Units 115 800 1.5 mA mA V Test Condition Integral reverse pn-diode In the MOSFET TA = 25 , IS = 115mA VGS = 0V
Notes ; Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature Pulse Test : Pulse Width = 250s, Duty Cycle 2% Essentially Independent of Operating Temperature
N-CHANNEL Small Signal MOSFET
2N7002MTF
2N7002MTF
N-CHANNEL Small Signal MOSFET


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Price & Availability of 2N7002MTF
DigiKey

Part # Manufacturer Description Price BuyNow  Qty.
2N7002MTF
2N7002MTFCT-ND
onsemi MOSFET N-CH 60V 115MA SOT23-3 1: USD0.31
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2N7002MTF
2N7002MTFDKR-ND
onsemi MOSFET N-CH 60V 115MA SOT23-3 1: USD0.31
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2N7002MTF
2N7002MTFTR-ND
onsemi MOSFET N-CH 60V 115MA SOT23-3 150000: USD0.03033
75000: USD0.035
30000: USD0.03896
9000: USD0.03966
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0

Quest Components

Part # Manufacturer Description Price BuyNow  Qty.
2N7002MTF
Fairchild Semiconductor Corporation SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 0.115A I(D), 60V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET 279: USD0.12
32: USD0.18
1: USD0.4
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488
2N7002MTF
Fairchild Semiconductor Corporation SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 0.115A I(D), 60V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET 45: USD0.339
10: USD0.452
1: USD0.565
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ComSIT USA

Part # Manufacturer Description Price BuyNow  Qty.
2N7002MTF
Fairchild Semiconductor Corporation N-CHANNEL SMALL SIGNAL MOSFET Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RFQ
2815

Component Electronics, Inc

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2N7002MTF
Fairchild Semiconductor Corporation IN STOCK SHIP TODAY 1000: USD0.4
100: USD0.46
1: USD0.62
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Perfect Parts Corporation

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2N7002MTF
Fairchild Semiconductor Corporation RFQ
48856
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MFG UPON REQUEST RFQ
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2N7002-MTF
Seagate Technology RFQ
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2N7002MTF-NL
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2N7002MTF_NL
MFG UPON REQUEST RFQ
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South Electronics

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2N7002MTF
Fairchild Semiconductor Corporation 2N7002MTF RFQ
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