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| DISCRETE SEMICONDUCTORS DATA SHEET LLE18100X NPN silicon planar epitaxial microwave power transistor Product specification November 1994 Philips Semiconductors Product specification NPN silicon planar epitaxial microwave power transistor FEATURES * Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR * Interdigitated structure provides high emitter efficiency * Gold metallization realizes very good stability of the characteristics and excellent lifetime * Multicell geometry gives good balance of dissipated power and low thermal resistance * Internal input prematching ensures good stability and allows an easier design of wideband circuits. PINNING - SOT437A PIN 1 2 3 base emitter connected to flange 3 MBB012 LLE18100X APPLICATIONS Intended for use in common emitter, class AB power amplifiers in CW conditions for professional applications at 1.85 GHz. DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT437A glued cap metal ceramic flange package, with emitter connected to flange. QUICK REFERENCE DATA Microwave performance up to Tmb = 25 C in a common emitter class AB amplifier. MODE OF OPERATION class AB (CW) f (GHz) 1.85 VCE (V) 24 ICQ (A) 0.1 PL1 (W) 9 Gpo (dB) 8 ZI/ZL () see Figs 8 and 9 PIN CONFIGURATION DESCRIPTION collector fpage 1 c handbook, halfpage b e 2 Top view MBC045 Fig.1 Simplified outline and symbol. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. November 1994 2 Philips Semiconductors Product specification NPN silicon planar epitaxial microwave power transistor LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VCBO VCER VCEO VEBO IC Ptot Tstg Tj Tsld Note 1. Up to 0.2 mm from ceramic. PARAMETER collector-base voltage collector-emitter voltage collector-emitter voltage emitter-base voltage collector current total power dissipation storage temperature range junction temperature soldering temperature t 10 s note 1 Tmb = 75 C CONDITIONS open emitter RBE = 220 open base open collector - - - - - - -65 - - MIN. LLE18100X MAX. 45 30 15 3 2 23 150 200 235 UNIT V V V V A W C C C handbook, halfpage 10 MRA545 handbook, halfpage IC (A) 30 Ptot (W) 25 MRA544 1 20 15 (1) 10-1 10 5 10-2 1 10 VCE (V) 102 0 0 50 100 150 250 200 Tmb (oC) Tmb 75 C (1) Region of permissible DC operation Ptot max = 23 W. Fig.3 Fig.2 DC SOAR. Maximum power dissipation derating as a function of mounting base temperature. November 1994 3 Philips Semiconductors Product specification NPN silicon planar epitaxial microwave power transistor THERMAL CHARACTERISTICS SYMBOL Rth j-mb Rth mb-h PARAMETER thermal resistance from junction to mounting base thermal resistance from mounting base to heatsink CONDITIONS Tj = 100 C LLE18100X MAX. 4.2 K/W 0.2 K/W CHARACTERISTICS Tmb = 25 C unless otherwise specified SYMBOL ICBO ICER ICEO IEBO hFE PARAMETER collector cut-off current collector cut-off current collector cut-off current emitter cut-off current DC current gain CONDITIONS VCB = 20 V; IE = 0 VCE = 30 V; RBE = 220 VCE = 20 V; IB = 0 VEB = 1.5 V; IC = 0 VCE = 3 V; IC = 1 A - - - - 15 MIN. MAX. 1 10 10 100 100 UNIT mA mA mA A APPLICATION INFORMATION Microwave performance up to Tmb = 25 C in a common emitter class AB amplifier (note 1). MODE OF OPERATION class AB (CW) Note 1. The test circuit is split into 2 independant halves each being 30 x 40 mm in size. f (GHz) 1.85 24 VCE (V) 0.1 ICQ (A) PL1 (W) 9; typ. 11 Gpo (dB) 8; typ. 10 Zi/ZL () see Figs 8 and 9 November 1994 4 Philips Semiconductors Product specification NPN silicon planar epitaxial microwave power transistor LLE18100X handbook, full pagewidth 30 mm 30 mm 3 40 mm input 1 9.1 3 3.5 3.4 2 0.7 0.7 5 1 6.5 11 3.2 2.3 6 0.7 2 6 1 3 40 mm output 0.7 1 11.5 0.635 3.2 0.635 4.9 2 5.5 10 MCD660 Dimensions in mm Substrate : Epsilam 10 Thickness : 0.635 mm Permittivity : r = 10 Fig.4 Prematching test circuit board. List of components (see bias circuit) COMPONENT TR1 D1 D2 R1 R2 R3 P1 C1 C5, C6 L1 L2 Notes 1. In thermal contact with TR1. 2. In thermal contact with D.U.T. DESCRIPTION transistor, BDT85 (or equivalent) diode, BY239800 (or equivalent) note 1 diode, BY239800 note 2 resistor resistor resistor potentiometer, 10 turns (sfernice) electrolytic capacitor feedthrough bypass capacitor 5 turns 0.5 mm copper wire with ferrite bead 5 turns 0.5 mm copper wire 100 3.3 k 56 4.7 k 10 F, 40 V 1500 pF Erie, ref. 1250-003 VALUE CATALOGUE NO. November 1994 5 Philips Semiconductors Product specification NPN silicon planar epitaxial microwave power transistor LLE18100X handbook, full pagewidth BIAS CIRCUIT PREMATCHINGTEST CIRCUIT +VCC R1 TR1 C5 R2 C6 L2 P1 D1 R3 C1 D2 0V MBC421 - 1 L1 D.U.T. Fig.5 Class AB bias circuit at 1.85 GHz. MRA543 handbook,15 halfpage -15 handbook, halfpage dim (dBc) -20 -25 -30 30 mA -35 -40 100 mA -45 MRA542 PL (W) ICQ = 100 mA 10 mA 3 mA ICQ = 3 mA 10 5 0 0 0.4 0.8 1.2 PIN (W) 1.6 0 2 4 6 POUT (W) 8 VCE = 24 V f = 1.85 GHz VCE = 24 V f = 1.85 GHz Fig.6 Load power as a function of input power. Fig.7 Intermodulation distortion as a function of average output power. November 1994 6 Philips Semiconductors Product specification NPN silicon planar epitaxial microwave power transistor 1 handbook, full pagewidth LLE18100X 0.5 2 0.2 1.65 5 10 1.75 Zi +j 0 -j 0.2 0.5 1 2 5 10 10 5 1.85 GHz 0.2 0.5 1 VCE = 24 V; Zo = 10 ; ICQ = 0.1 A. 2 MGA247 Fig.8 Input impedance as a function of frequency; typical values. 1 handbook, full pagewidth 0.5 2 0.2 5 +j 0 -j ZL 0.2 1.65 1.75 0.5 1 2 5 10 10 1.85 GHz 10 5 0.2 0.5 1 VCE = 24 V; Zo = 10 ; ICQ = 0.1 A. 2 MGA248 Fig.9 Optimum load impedance as a function of frequency; typical values. November 1994 7 Philips Semiconductors Product specification NPN silicon planar epitaxial microwave power transistor PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 2 leads LLE18100X SOT437A D A F 3 U1 q C B c 1 H U2 E A p w1 M A B 2 b w2 M C Q 0 5 scale 10 mm DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm A 5.03 4.31 b 1.66 1.39 c 0.13 0.07 D 6.99 6.22 E 6.99 6.22 F 1.66 1.39 H 17.02 16.00 p 3.43 3.17 Q 2.29 2.03 q 14.22 U1 19.03 18.77 U2 6.48 6.22 w1 0.51 w2 1.02 OUTLINE VERSION SOT437A REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-05-23 November 1994 8 Philips Semiconductors Product specification NPN silicon planar epitaxial microwave power transistor DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values LLE18100X This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. November 1994 9 |
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