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| PD - 9.1353A PRELIMINARY IRFI530N D HEXFET(R) Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated VDSS = 100V G S RDS(on) = 0.11 ID = 12A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing. TO-220 FULLPAK Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Current Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw. Max. 12 8.6 60 41 0.27 20 150 9.0 4.1 5.0 -55 to + 175 300 (1.6mm from case) 10 lbf*in (1.1N*m) Units A W W/C V mJ A mJ V/ns C Thermal Resistance Parameter RJC RJA Junction-to-Case Junction-to-Ambient Min. ---- ---- Typ. ---- ---- Max. 3.7 65 Units C/W 3/16/98 IRFI530N Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss C Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Drain to Sink Capacitance Min. 100 --- --- 2.0 6.4 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.12 --- --- --- --- --- --- --- --- --- --- 6.4 27 37 25 Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 0.11 VGS = 10V, ID = 6.6A 4.0 V VDS = VGS, ID = 250A --- S VDS = 50V, ID = 9.0A 25 VDS = 100V, VGS = 0V A 250 VDS = 80V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 44 ID = 9.0A 6.2 nC VDS = 80V 21 VGS = 10V, See Fig. 6 and 13 --- VDD = 50V --- ID = 9.0A ns --- RG = 12 --- RD = 5.5, See Fig. 10 Between lead, 4.5 --- 6mm (0.25in.) nH from package 7.5 --- and center of die contact 640 --- VGS = 0V 160 --- VDS = 25V pF 88 --- = 1.0MHz, See Fig. 5 12 --- = 1.0MHz D G S Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Notes: Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. Typ. Max. Units --- --- --- --- --- --- --- --- 130 650 12 A 60 1.3 190 970 V ns nC Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, IS = 6.6A, VGS = 0V TJ = 25C, IF = 9.0A di/dt = 100A/s D G S Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Pulse width 300s; duty cycle 2%. t=60s, =60Hz Uses IRF530N data and test conditions VDD = 15V, starting TJ = 25C, L = 3.1mH RG = 25, IAS = 9.0A. (See Figure 12) ISD 9.0A, di/dt 520A/s, VDD V(BR)DSS, TJ 175C IRFI530N 100 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 100 I , D rain-to-S ource C urrent (A ) D I , D rain-to-S ource C urrent (A ) D VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 10 10 4.5V 4.5V 1 0.1 1 20s P U LS E W ID TH T J = 25C 10 A 1 0.1 1 20s P U LS E W ID TH T J = 175C 10 100 A 100 V D S , D rain-to-S ourc e V oltage (V ) V D S , D ra in-to-S o urc e V o lta ge (V ) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 3.0 R D S (on ) , D rain-to -S ource O n R esistance (N orm alized) I D = 15A I D , D ra in -to-S o urc e C urren t (A ) 2.5 T J = 2 5 C T J = 1 7 5 C 2.0 10 1.5 1.0 0.5 1 4 5 6 7 V DS = 5 0V 2 0 s P U L S E W ID T H 8 9 10 A 0.0 -60 -40 -20 0 20 40 60 80 V G S = 10V 100 120 140 160 180 A V G S , G a te -to -S o u rc e V o lta g e (V ) T J , Junction T em perature (C ) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature IRFI530N 1200 1000 V G S , G ate-to-S ource V oltage (V ) V GS C iss C rss C oss = = = = 0V , f = 1M H z C gs + C gd , Cds S H O R TE D C gd C ds + C gd 20 I D = 9.0A V D S = 80V V D S = 50V V D S = 20V 16 C , C apacitanc e (pF ) C iss 800 12 600 C os s 400 8 C rss 200 4 0 1 10 100 A 0 0 5 10 15 20 FO R TE S T C IR C U IT S E E FIG U R E 13 25 30 35 40 45 A V D S , D rain-to-Sourc e Voltage (V ) Q G , Total G ate C harge (nC ) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 1000 I S D , R everse D rain C urrent (A ) O P E R A TIO N IN TH IS A R E A LIM ITE D B Y R D S (on) I D , D rain C urrent (A ) 100 T J = 175C 10 10 s T J = 25C 10 100 s 1 0.4 0.6 0.8 1.0 1.2 V G S = 0V 1.4 A 1 1 T C = 25C T J = 175C S ingle P ulse 10 1m s 10m s 100 A 1000 1.6 V S D , S ource-to-D rain V oltage (V ) V D S , D rain-to-S ource V oltage (V ) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area IRFI530N 8.0 VDS VGS RG RD D.U.T. + I D , Drain Current (A) 6.0 -VDD 10V 4.0 Pulse Width 1 s Duty Factor 0.1 % Fig 10a. Switching Time Test Circuit 2.0 VDS 90% 0.0 25 50 75 100 125 150 175 TC , Case Temperature ( C) 10% VGS td(on) tr t d(off) tf Fig 9. Maximum Drain Current Vs. Case Temperature 10 Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) D = 0.50 1 0.20 0.10 0.05 0.02 0.01 P DM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 10 0.1 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case IRFI530N L E A S , S ingle P ulse A valanc he E nergy (m J) VDS D.U.T. RG + 10 V 350 TO P 300 B O TTO M 250 ID 3.7 A 6.4A 9.0A VDD IAS tp 0.01 200 Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp VDD VDS 150 100 50 0 V D D = 25V 25 50 75 100 125 150 A 175 S tarting T J , Junction T em perature (C ) IAS Fig 12c. Maximum Avalanche Energy Vs. Drain Current Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50K QG 12V .2F .3F 10 V QGS VG QGD VGS 3mA D.U.T. + V - DS IG ID Charge Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit IRFI530N Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer D.U.T + - + RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test + VDD Driver Gate Drive P.W. Period D= P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS IRFI530N Package Outline TO-220 FullPak Outline Dimensions are shown in millimeters (inches) 10.60 (.417) 10.40 (.409) o 3.40 (.133) 3.10 (.123) -A3.70 (.145) 3.20 (.126) 4.80 (.189) 4.60 (.181) 2.80 (.110) 2.60 (.102) LE A D A S S IG N ME N TS 1 - G A TE 2 - D R A IN 3 - SOURCE 7.10 (.280) 6.70 (.263) 16.00 (.630) 15.80 (.622) 1.15 (.045) M IN . 1 2 3 NOTES: 1 D IME N S IO N IN G & TO LE R A N C IN G P E R A N S I Y 14.5M , 1982 2 C O N TR O LLIN G D IM E N S IO N : IN C H . 3.30 (.130) 3.10 (.122) -B13.70 (.540) 13.50 (.530) C D A 1.40 (.055) 3X 1.05 (.042) 2.54 (.100) 2X 0.90 (.035) 3X 0.70 (.028) 0.25 (.010) M AM B 3X 0.48 (.019) 0.44 (.017) B 2.85 (.112) 2.65 (.104) M IN IM U M C R E E P A G E D IS TA N C E B E TW E E N A -B -C -D = 4.80 (.189) Part Marking Information TO-220 FullPak E X A M P L E : T H IS IS A N IR F I8 4 0 G W ITH A S S E M B L Y LOT COD E E401 A IN T E R N A T IO N A L R E C T IF IE R LOGO ASSEMBLY LOT CODE PART NUMBER IR F I8 4 0 G E 40 1 92 45 D ATE CO DE (Y Y W W ) Y Y = YE A R W W = W EEK WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 3/98 |
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