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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2826 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION PART NUMBER 2SK2826 2SK2826-S 2SK2826-ZJ PACKAGE TO-220AB TO-262 TO-263 DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES * Super Low On-State Resistance RDS(on)1 = 6.5 m (MAX.) (VGS = 10 V, ID = 35 A) RDS(on)2 = 9.7 m (MAX.) (VGS = 4.0 V, ID = 35 A) * Low Ciss : Ciss = 7200 pF (TYP.) * Built-in Gate Protection Diode ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (Pulse) Note1 VDSS VGSS(AC) VGSS(DC) ID(DC) ID(pulse) PT PT Tch Tstg 60 20 +20, -10 70 280 100 1.5 150 -55 to + 150 70 490 V V V A A W W C C A mJ Total Power Dissipation (TC = 25C) Total Power Dissipation (TA = 25C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy Note2 Note2 IAS EAS Notes 1. PW 10 s, Duty cycle 1 % 2. Starting Tch = 25 C, RA = 25 , VGS = 20 V 0 V THERMAL RESISTANCE Channel to Case Channel to Ambient Rth(ch-C) Rth(ch-A) 1.25 83.3 C/W C/W The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D11273EJ2V0DS00 (2nd edition) Date Published April 1999 NS CP(K) Printed in Japan The mark * shows major revised points. (c) 1998 2SK2826 ELECTRICAL CHARACTERISTICS (TA = 25 C) CHARACTERISTICS SYMBOL RDS(on)1 RDS(on)2 Gate to Source Cut-off Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS(off) | yfs | IDSS IGSS Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr TEST CONDITIONS VGS = 10 V, ID = 35 A VGS = 4.0 V, ID = 35 A VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 35 A VDS = 60 V, VGS = 0 V VGS = 20 V, VDS = 0 V VDS = 10 V VGS = 0 V f = 1 MHz ID = 35 A VGS(on) = 10 V VDD = 30 V RG = 10 ID = 70 A VDD = 48 V VGS = 10 V IF = 70 A, VGS = 0 V IF = 70 A, VGS = 0 V di/dt = 100A/ s 7200 2000 700 100 1200 440 520 150 20 40 0.97 80 250 1.0 20 MIN. TYP. 5.5 7.0 1.5 94 10 10 MAX. 6.5 9.7 2.0 UNIT m m V S * Drain to Source On-state Resistance A A pF pF pF ns ns ns ns nC nC nC V ns nC * * * * Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 PG. VGS = 20V 0 V 50 TEST CIRCUIT 2 SWITCHING TIME D.U.T. L VDD PG. RG RG = 10 VGS RL VDD ID 90 % 90 % ID VGS Wave Form 0 10 % VGS(on) 90 % BVDSS IAS ID VDD VDS VGS 0 t t = 1 s Duty Cycle 1 % ID Wave Form 0 10 % td(on) ton tr td(off) toff 10 % tf Starting Tch TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = 2 mA PG. 50 RL VDD 2 Data Sheet D11273EJ2V0DS00 2SK2826 TYPICAL CHARACTERISTICS (TA = 25 C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 140 TOTAL POWER DISSIPATION vs. CASE TEMPERATURE dT - Percentage of Rated Power - % PT - Total Power Dissipation - W 100 80 60 40 20 120 100 80 60 40 20 0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160 TC - Case Temperature - C TC - Case Temperature - C DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE Pulsed FORWARD BIAS SAFE OPERATING AREA 1000 ID(pulse) PW 10 0 = 100 100 R D S( ) on m Li 1 ID(DC) s ID - Drain Current - A ID - Drain Current - A t (a VG d ite V) 0 =1 S 10 s m 80 60 VGS =10 V 40 VGS = 4.0 V 20 s 10 Po we 10 rD m 0 s m 10 iss DC ipa tio n s Lim ite d 1 0.1 TC = 25C Single Pulse 1 10 100 0 0.2 0.4 0.6 0.8 VDS - Drain to Source Voltage - V VDS - Drain to Source Voltage - V FORWARD TRANSFER CHARACTERISTICS 1000 Pulsed ID - Drain Current - A 100 10 TA = -25C 25C 75C 125C 2 4 1 VDS = 10 V 6 8 0 VGS - Gate to Source Voltage - V Data Sheet D11273EJ2V0DS00 3 2SK2826 TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1 000 rth(t) - Transient Thermal Resistance - C/W Rth(ch-A) = 83.3 C/W 100 10 1 Rth(ch-C) = 1.25 C/W 0.1 0.01 0.001 10 Single Pulse TC = 25C 100 1m 10 m 100 m 1 10 100 1 000 PW - Pulse Width - s RDS(on) - Drain to Source On-State Resistance - m FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT | yfs | - Forward Transfer Admittance - S 100 VGS = 0V 10 VDS=10V Pulsed DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 30 Pulsed 20 1.0 TA = 175C 75C 25C -25C 1.0 10 100 10 TA = 25C ID = 35 A 0 10 20 30 0.1 0.1 ID - Drain Current - A RDS(on) - Drain to Source On-State Resistance - m VGS - Gate to Source Voltage - V GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT VGS(off) - Gate to Source Cutoff Voltage - V 30 Pulsed 2.0 VDS = 10 V ID = 1 mA 20 1.5 1.0 10 VGS = 4.0 V VGS = 10 V 0.5 0 10 100 1000 0 - 50 0 50 100 150 200 ID - Drain Current - A Tch - Channel Temperature - C 4 Data Sheet D11273EJ2V0DS00 2SK2826 RDS(on) - Drain to Source On-state Resistance - m DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE ISD - Diode Forward Current - A SOURCE TO DRAIN DIODE FORWARD VOLTAGE Pulsed 100 VGS = 10 V 10 VGS = 0 V 1 20 15 VGS = 4.0 V 10 VGS = 10 V 5 0.1 0 - 50 0 50 100 ID = 25 A 150 0 1.5 1.0 0.5 VSD - Source to Drain Voltage - V Tch - Channel Temperature - C CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 100 000 Ciss, Coss, Crss - Capacitance - pF * 10 000 td(on), tr, td(off), tf - Switching Time - ns SWITCHING CHARACTERISTICS VGS = 0 V f = 1 MHz tr 1 000 tf td(off) 100 td(on) VDD = 30 V VGS = 10 V RG = 10 100 10 000 Ciss Coss 1 000 Crss 100 0.1 1 10 100 10 0.1 1 10 VDS - Drain to Source Voltage - V ID - Drain Current - A REVERSE RECOVERY TIME vs. DRAIN CURRENT 1000 trr - Reverse Recovery Time - ns VDS - Drain to Source Voltage - V di/dt = 100 A/s VGS = 0 V DYNAMIC INPUT/OUTPUT CHARACTERISTICS 8 80 VGS - Gate to Source Voltage - V VGS 60 VDD = 48 V 30 V 12 V 6 100 40 4 10 20 VDS 0 50 100 150 2 1 0.1 1.0 10 100 200 IF - Drain Current - A QG - Gate Charge - nC Data Sheet D11273EJ2V0DS00 5 2SK2826 SINGLE AVALANCHE ENERGY vs. INDUCTIVE LOAD SINGLE AVALANCHE ENERGY DERATING FACTOR 160 IAS = 70 A VDD = 30 V RG = 25 VGS = 20 V 0 V IAS 70 A | IAS | - Single Avalanche Energy - mJ 100 90 mJ Energy Derating Factor - % 10 m EAS =4 140 120 100 80 60 40 20 10 1.0 VDD = 30 V VGS = 20 V 0 V RG = 25 10 100 1m L - Inductive Load - H 0 25 50 75 100 125 150 Starting Tch - Starting Channel Temperature - C 6 Data Sheet D11273EJ2V0DS00 2SK2826 PACKAGE DRAWINGS (Unit : mm) 1)TO-220AB (MP-25) 2)TO-262 (MP-25 Fin Cut) 3.00.3 1.00.5 10.6 MAX. 10.0 4.8 MAX. 3.60.2 5.9 MIN. 4.8 MAX. 1.30.2 1.30.2 (10) 4 15.5 MAX. 4 123 6.0 MAX. 1 2 3 1.30.2 1.30.2 12.7 MIN. 12.7 MIN. 8.50.2 0.750.1 2.54 TYP. 0.50.2 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 2.80.2 0.750.3 2.54 TYP. 0.50.2 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 2.80.2 3)TO-263 (MP-25ZJ) (10) 4 1.00.5 8.50.2 4.8 MAX. 1.30.2 EQUIVALENT CIRCUIT Drain 5.70.4 1.40.2 0.70.2 2.54 TYP. 1 2 ( R 0.5 ) .8R ) Gate 0.50.2 Body Diode 3 2.54 TYP. (0 Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. 2.80.2 1.Gate 2.Drain 3.Source 4.Fin (Drain) Gate Protection Diode Source Data Sheet D11273EJ2V0DS00 7 2SK2826 * The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. * No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. * NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. * Descriptions of circuits, software, and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software, and information in the design of the customer's equipment shall be done under the full responsibility of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third parties arising from the use of these circuits, software, and information. * While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. * NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. M7 98. 8 |
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