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DISCRETE POWER & SIGNAL TECHNOLOGIES
2N6076
SILICON PNP SMALL SIGNAL TRANSISTOR
BVCEO . . . . 25 V (Min) hFE . . . . 100 (Min) @ VCE = 10 V, IC = 10 mA
1 B 2 C 3 E 0.175 - 0.185 (4.450 - 4.700) LOGOXYY
1
2
3
0.135 - 0.145 (3.429 - 3.683)
ABSOLUTE MAXIMUM RATINGS (NOTE 1) TEMPERATURES Storage Temperature -55 Degrees C to Operating Junction Temperature POWER DISSIPATION (NOTES 2 & 3) Total Device Dissipation at TA = 25 Deg C VOLTAGES & CURRENT VCEO Collector to Emitter VCBO Collector to Base VEBO Emitter to Base IC Collector Current
150 Degrees C 150 Degrees C
2N 6076
0.175 - 0.185 (4.450 - 4.700)
SEATING
625 mW
0.500 (12.70)
PLANE
MIN
25 V 25 V 5V 500 mA
0.016 - 0.021 (0.410- 0.533) 0.045 - 0.055 (1.143- 1.397) 0.095 - 0.105 (2.413 - 2.667)
ELECTRICAL CHARACTERISTICS (25 Degrees C Ambient Temperature unless otherwise stated)
SYM
BVCBO BVCEO BVEBO ICBO ICES IEBO hFE VCE(sat) VBE(sat) VBE(on)
CHARACTERISTICS
Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base -Emitter On Voltage
MIN MAX
25 25 5 100 10 100 100 100 500 0.25 0.8 0.5 1.2
UNITS
V V V nA uA nA uA V V V
TEST CONDITIONS
IC = IC = IE = 100 uA 10 mA 10 uA
VCB = 25 V VCB = 25 V , T=+100C VCE = 25 V VEB = 3.0 V VCE = 10 V IC = 10 mA IC = 10mA IB = 1.0mA IC = 10mA IB = 1.0mA VCE = 10 V IC = 10mA
(c)1998 Fairchild Semiconductor Corporation
2N6076.ppt6894 revA
DISCRETE POWER & SIGNAL TECHNOLOGIES
2N6076
SILICON PNP SMALL SIGNAL TRANSISTOR
ELECTRICAL CHARACTERISTICS Con't (25 Degrees C Ambient Temperature unless otherwise stated)
SYM
Ccb hfe
CHARACTERISTICS
Output Capacitance Small Signal Current Gain
MIN MAX UNITS
1 100 13 750 pF
TEST CONDITIONS
VCB = 10 V, f = 1 MHz VCE = 10 V, IC=10 mA, f =1KHz
NOTES: 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings are based on a maximum junction temperature of 150 degrees C.

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Price & Availability of 2N6076

Part #	Manufacturer	Description	Price	BuyNow Qty.
2N6076 2156-2N6076-FS-ND	Rochester Electronics LLC	TRANS PNP 25V 0.5A TO92-3	11539: USD0.03	24567
2N6076 2N6076-ND	onsemi	TRANS PNP 25V 0.5A TO92-3		0

Part #	Manufacturer	Description	Price	BuyNow Qty.
2N6076 2N6076	Central Semiconductor Corp	Bipolar Transistor Small Signal PNP Amplifier/Switch 25V 100mA 3-Pin TO-92 Through Hole Box - Boxed Product (Development Kits) (Alt: 2N6076)		0
2N6076 APM PBFREE 2N6076 APM PBFREE	Central Semiconductor Corp	Transistor GP BJT PNP 25V 100mA 3-Pin TO-92 Ammo Pack - Ammo Pack (Alt: 2N6076 APM PBFREE)	400000: USD0.2002 200000: USD0.20328 40000: USD0.20636 20000: USD0.20944 12000: USD0.21406 8000: USD0.21868 4000: USD0.22352	0
2N6076 PBFREE 2N6076 PBFREE	Central Semiconductor Corp	Transistor GP BJT PNP 25V 100mA 3-Pin TO-92 Box - Boxed Product (Development Kits) (Alt: 2N6076 PBFREE)	500000: USD0.2002 250000: USD0.20328 50000: USD0.20636 25000: USD0.20944 15000: USD0.21406 10000: USD0.21868 5000: USD0.22352	0
2N6076 APM TIN/LEAD 2N6076 APM TIN/LEA	Central Semiconductor Corp	Transistor GP BJT PNP 25V 100mA 3-Pin TO-92 Ammo Pack - Ammo Pack (Alt: 2N6076 APM TIN/LEA)	400000: USD0.23023 200000: USD0.23377 40000: USD0.23731 20000: USD0.24086 12000: USD0.24617 8000: USD0.25148 4000: USD0.25705	0
2N6076 TRE PBFREE 2N6076 TRE PBFREE	Central Semiconductor Corp	Transistor GP BJT PNP 25V 100mA 3-Pin TO-92 T/R - Tape and Reel (Alt: 2N6076 TRE PBFREE)	400000: USD0.2002 200000: USD0.20328 40000: USD0.20636 20000: USD0.20944 12000: USD0.21406 8000: USD0.21868 4000: USD0.22352	0

Part #	Manufacturer	Description	Price	BuyNow Qty.
2N6076 APM PBFREE 610-2N6076APM	Central Semiconductor Corp	Bipolar Transistors - BJT Through-Hole Transistor-Small Signal (<=1A) PNP General Purpose Amplifier/Switch	4000: USD0.207	0
2N6076 TRE PBFREE 610-2N6076TRE	Central Semiconductor Corp	Bipolar Transistors - BJT Through-Hole Transistor-Small Signal (<=1A) PNP General Purpose Amplifier/Switch	4000: USD0.202	0
2N6076 APM TIN/LEAD 610-2N6076APMTIN	Central Semiconductor Corp	Bipolar Transistors - BJT Through-Hole Transistor-Small Signal (<=1A) PNP General Purpose Amplifier/Switch	4000: USD0.24 12000: USD0.232	0
2N6076 TRE TIN/LEAD 610-2N6076TRETIN	Central Semiconductor Corp	Bipolar Transistors - BJT Through-Hole Transistor-Small Signal (<=1A) PNP General Purpose Amplifier/Switch	4000: USD0.23	0
2N6076 PBFREE 610-2N6076	Central Semiconductor Corp	Bipolar Transistors - BJT PNP Lo Noise	2500: USD0.215 5000: USD0.214	0

Part #	Manufacturer	Description	Price	BuyNow Qty.
2N6076		500 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92	38: USD0.102 1: USD0.136	64
2N6076	National Semiconductor Corporation	500 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92	38: USD0.102 1: USD0.136	57
2N6076	Fairchild Semiconductor Corporation	500 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92	1: USD0.136	5

Part #	Manufacturer	Description	Price	BuyNow Qty.
2N6076	Fairchild Semiconductor Corporation	Small Signal Bipolar Transistor, PNP, TO-92 '	1000: USD0.0224 500: USD0.0237 100: USD0.0247 25: USD0.0258 1: USD0.0263	24567

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