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| FDT458P June 2001 FDT458P 30V P-Channel PowerTrench(R) MOSFET General Description This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers, and battery chargers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. Features * 3.4 A, -30 V. RDS(ON) = 130 m @ V GS = 10 V RDS(ON) = 200 m @ V GS = 4.5 V * Fast switching speed * Low gate charge (2.5 nC typical) * High performance trench technology for extremely low RDS(ON) * High power and current handling capability in a widely used surface mount package Applications * Battery chargers * Motor drives D D D D S D SOT-223 G S G D S SOT-223* (J23Z) G G S Absolute Maximum Ratings Symbol V DSS V GSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Maximum Power Dissipation TA=25oC unless otherwise noted Parameter Ratings - 30 20 (Note 1a) Units V V A W 3.4 10 3.0 1.3 1.1 -55 to +150 (Note 1a) (Note 1b) (Note 1c) TJ , TSTG Operating and Storage Junction Temperature Range C Thermal Characteristics RJA RJ C Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 42 12 C/W C/W Package Marking and Ordering Information Device Marking 458P Device FDT458P Reel Size 13'' Tape width 12mm Quantity 2500 units (c)2001 Fairchild Semiconductor Corporation FDT458P Rev. B(W) FDT458P Electrical Characteristics Symbol BV DSS BVDSS TJ IDSS IGSSF IGSSR TA = 25C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse (Note 2) Test Conditions V GS = 0 V, ID = -250 A ID = -250 A, Referenced to 25C V DS = -24 V, V GS = 0 V V GS = -25 V, V DS = 0 V V GS = -25 V, V DS = 0 V V DS = V GS , ID = -250 A ID = -250 A, Referenced to 25C V GS = -10 V, ID = -3.4 A V GS = -4.5 V, ID = -2.7 A V GS =-10 V, ID =-3.4 A, TJ =125C V GS = -10 V, V DS = -5 V V DS = -5 V, ID = -3.4 A Min -30 Typ Max Units V Off Characteristics -23 -1 100 -100 mV/C A nA nA On Characteristics V GS(th) VGS(th) TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance -1 -1.8 4 105 157 147 -3 V mV/C 130 200 210 m ID(on) gFS -5 3 A S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) V DS = -15 V, f = 1.0 MHz V GS = 0 V, 205 55 26 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD = -15 V, V GS = -10 V, ID = -1 A, RGEN = 6 4.5 12.5 11 2 9 23 20 4 3.5 ns ns ns ns nC nC nC V DS = -15 V, V GS = -10 V ID = -3.4 A, 2.5 0.7 1 Drain-Source Diode Characteristics and Maximum Ratings IS V SD Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward V GS = 0 V, IS = -2.5 A Voltage -2.5 (Note 2) A V -0.8 -1.2 a) 42C/W when mounted on a 1in2 pad of 2 oz copper b) 95C/W when mounted on a .0066 in2 pad of 2 oz copper c) 110C/W when mounted on a minimum pad. 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% FDT458P Rev. B(W) FDT458P Typical Characteristics 10 2 VGS = -10V RDS(ON) NORMALIZED , DRAIN-SOURCE ON-RESISTANCE -6.0V -5.0V V 1.8 V GS=-4.5V 1.6 -5.0V 1.4 -6.0V 1.2 1 -7.0V -8.0V -10V -ID , DRAIN CURRENT (A) 8 -4.5V 6 -4.0V 4 -3.5V 2 -3.0V 0 0 1 2 3 4 5 -V DS , DRAIN TO SOURCE VOLTAGE (V) 0.8 0 2 4 6 8 10 -ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.55 RDS(ON) ON-RESISTANCE (OHM) , 1.7 RDS(ON) NORMALIZED , DRAIN-SOURCE ON-RESISTANCE ID = -3.4A VGS = -10V 1.5 ID = -1.7A 0.45 1.3 0.35 T A = 125o C 0.25 T A = 25o C 0.15 1.1 0.9 0.7 -50 -25 0 25 50 75 100 125 150 175 T J, JUNCTION TEMPERATURE ( oC) 0.05 2 4 6 8 10 -V GS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. 5 -I S, REVERSE DRAIN CURRENT (A) V DS = -5V 4 -ID, DRAIN CURRENT (A) T A = -55oC 25o C 125oC Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 10 VGS =0V 1 TA = 125 oC 25o C 0.1 -55 oC 0.01 3 2 1 0.001 0 1.5 2 2.5 3 3.5 4 -V GS, GATE TO SOURCE VOLTAGE (V) 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -V SD , BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDT458P Rev. B(W) FDT458P Typical Characteristics 10 -V GS, GATE-SOURCE VOLTAGE (V) ID = -3.4A 8 -15V CAPACITANCE (pF) V DS = -5V -10V 300 f = 1 MHz V GS = 0 V 250 CISS 200 6 150 COSS 100 4 2 50 0 0 1 2 3 4 5 Qg, GATE CHARGE (nC) C RSS 0 0 5 10 15 20 25 30 -V DS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 100 Figure 8. Capacitance Characteristics. 200 SINGLE PULSE R J A = 110oC / W TA = 25o C POWER (W) 100 120 -I D, DRAIN CURRENT (A) 10 100 s R DS(ON) LIMIT 1m 10ms 100ms 1s 10s V GS = -10V SINGLE PULSE RJA = 110 oC/W TA = 25o C DC 160 1 80 0.1 40 0.01 0.1 1 10 -V D S DRAIN-SOURCE VOLTAGE (V) , 0 0.0001 0.001 0.01 0.1 1 10 100 1000 SINGLE PULSE TIME (SEC) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 1 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 R JA (t) = r(t) + R JA R JA = 110 C/W P(pk) t1 t2 TJ - T A = P * R JA (t) Duty Cycle, D = t 1 / t 2 Single Pulse 0.001 0.001 0.01 0.1 1 t1 , TIME (sec) 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDT458P Rev. B(W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM DISCLAIMER FAST FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER SMART STARTTM STAR*POWERTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET VCXTM STAR*POWER is used under license FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H3 |
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