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| Power Transistor FN812 Absolute Maximum Ratings (Ta=25C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings 120 100 6 8 (pulse 12) 3 35 (Tc=25C) 150 -55 to +150 Unit V V V A A W C C Electrical Characteristics Symbol ICBO IEBO VCEO hFE VCE (sat) Test Conditions VCB = 120V VEB = 6V IC = 50mA VCE = 4V, IC = 3A IC = 4A, IB = 0.4A Ratings 10max 10max 100min 70min 0.3max 4 (Ta=25C) Unit A A V V External Dimensions FM20 (full-mold) 10.0 4.2 2.8 3.3 C0.5 8.4 a b 16.9 VCC (V) 12 RL () 4 IC (A) 3 VBB1 (V) 10 VBB2 (V) -5 IB1 (mA) 30 IB2 (mA) -30 t on (s) 1.0 t stg (s) 2.0 tf (s) 0.5 2.54 2.2 1.35 1.35 0.85 2.54 3.9 Typical Switching Characteristics 0.8 2.6 (13.5) 0.45 BCE a) Type No. b) Lot No. (Unit: mm) s IC -- VCE Characteristics (typ.) 300m A 20 0m A 8 s VCE (sat) -- IB Characteristics (typ.) 2 s IC -- VBE Temperature Characteristics (typ.) 8 15 0m A 10 0m A 75 mA A 50m 6 6 VCE (sat) (V) IC (A) 25mA 4 IC (A) 1 Ic = 3A Ic = 5A Ic = 1A 4 2 IB = 10mA 2 Tc = -55C 25C 75C 125C 0 0 1 2 3 4 0 5 10 50 100 500 1000 2000 0 0 0.5 1.0 1.5 VCE (V) IB (mA) VBE (V) s hFE -- IC Characteristics (typ.) 500 (VCE = 4V) s hFE -- IC Temperature Characteristics (typ.) 500 Tc = 125C (VCE = 4V) s j-a -- t Characteristics ) C 25 50 (C/W) Typ j-a 100 50 30 0.01 0.05 0.1 0.5 1 5 8 100 50 30 0.01 75C 25C -55C 10 5 1 0.5 hFE hFE NO FIN = (Ta Ta = 25C Single Pulese 0.1 0.05 0.0002 0.001 0.05 0.1 0.5 1 58 0.01 0.1 1 10 100 IC (A) IC (A) t (sec) s fT -- IE Characteristics (typ.) 30 Typ (VCE = 12V) s Safe Operating Area (single pulse) 20 se 1m s PC -- Ta Derating 40 natural air cooling Silicone grease Aluminum heatsink Unit: mm 10 10 c 5 20 30 ith W 10 0m D. C (T ms ec se fT (MHz) PC (W) c c IC (A) =2 ite fin in 1 0.5 5 C) 20 20 0* 20 0* nk si at he 10 2 10 100 * 10 0*2 Without heatsink 0 -0.01 -0.05 -0.1 -0.5 -1 -5 -10 0.1 3 5 10 50 100 200 0 0 50 100 150 IE (A) VCE (V) Ta (C) 60 |
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