PART |
Description |
Maker |
MV1402-5MCHIP MV1401B-4M MV1405B-2M MV1403-6MCHIP |
360 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE 550 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-14 250 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7 175 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE 100 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE 120 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7
|
|
Z8L18008FEC Z8L18008VEC Z8L18008PEC Z8L18010FSC Z8 |
Microprocessor Unit Z8018x Family MPU Niobium Oxide Capacitor; Capacitor Type:Solid; Voltage Rating:4VDC; Capacitor Dielectric Material:Niobium Oxide; Capacitance:10uF; Capacitance Tolerance: /- 20%; ESR:2.2ohm; Leaded Process Compatible:Yes; Operating Temp. Max:105 C RoHS Compliant: Yes CONN RING INSUL 26-24 AWG #8 CONN RING INSUL 26-24 AWG #6 CONN RING INSUL 26-24 AWG #2 8-BIT, MICROPROCESSOR, PDIP64 ENHANCED Z180 MICROPROCESSOR Niobium Oxide Capacitor; Capacitor Type:Solid; Voltage Rating:6.3VDC; Capacitor Dielectric Material:Niobium Oxide; Capacitance:6.8uF; Capacitance dielectric type:Niobium Oxide; Case style:P; Depth, external:1.5mm; Length / Height, RoHS Compliant: Yes Niobium Oxide Capacitor; Capacitor Type:Solid; Voltage Rating:2.5VDC; Capacitor Dielectric Material:Niobium Oxide; Capacitance:15uF; Capacitance Niobium Oxide Capacitor; Capacitor Type:Solid; Voltage Rating:6.3VDC; Capacitor Dielectric Material:Niobium Oxide; Capacitance:4.7uF; Capacitance
|
ZILOG INC Zilog Inc. Zilog. ZiLOG, Inc.
|
HVU306C |
Diodes>Variable Capacitance VARIABLE CAPACITANCE DIODE FOR VHF TUNER
|
Renesas Electronics Corporation
|
MMVL105GT1 ON2289 |
VOLTAGE VARIABLE CAPACITANCE DIODE 2.15 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE 30 VOLT VOLTAGE VARIABLE CAPACITANCE DIODE From old datasheet system
|
Leshan Radio Company, Ltd. ONSEMI[ON Semiconductor]
|
GS-R4840NV |
; Capacitance:1.2pF; Capacitance Tolerance: /- 0.1 pF; Working Voltage, DC:150V; Package/Case:0605; Series:SQ; Dielectric Material:Ceramic; Leaded Process Compatible:Yes; Mounting Type:PCB Surface Mount 36糯负开关稳压器 36 W NEGATIVE SWITCHING REGULATOR
|
STMicroelectronics N.V. STMICROELECTRONICS[STMicroelectronics]
|
SA56614-44GW SA56614-20GW SA56614-20 SA56614-29 SA |
Ceramic Multilayer Capacitor; Capacitance:100000pF; Capacitance Tolerance: /- 10 %; Working Voltage, DC:25V; Dielectric Characteristic:X7R; Package/Case:0603; Series:VJ; Leaded Process Compatible:Yes; Mounting Type:Surface Mount Ceramic Multilayer Capacitor; Capacitance:1200pF; Capacitance Tolerance: /- 10 %; Working Voltage, DC:50V; Dielectric Characteristic:X7R; Package/Case:0603; Series:VJ; Features:Multilayer Ceramic Chip Capacitor CMOS system reset
|
PHILIPS[Philips Semiconductors]
|
1SV229 |
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type Variable Capacitance Diode VCO for UHF Band Radio
|
Toshiba Semiconductor
|
BB664 Q62702-B0909 Q62702-B0908 |
Silicon Variable Capacitance Diode (For VHF TV-tuners High capacitance ratio Low series inductance Low series resistance) 硅变容二极管(甚高频电视信号接收器高电容率低串联电感低串联电阻) From old datasheet system
|
SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|
TD62501 TD62501F TD62501P TD62504F TD62504P TD6250 |
From old datasheet system Ceramic Disc Capacitor; Capacitance:3900pF; Capacitance Tolerance: /- 20%; Series:VY2; Voltage Rating:330VDC; Capacitor Dielectric Material:Ceramic 7 SINGLE DRIVER 7单一驱动程序
|
TOSHIBA[Toshiba Semiconductor] Toshiba Corporation Toshiba, Corp.
|
GMV2114-GM1 GMV2154-GM1 GMV1981-GM1 GMV5007-GM1 GM |
Surface Mount Varactor Diodes C BAND, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE C BAND, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE C BAND, 0.25 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE
|
Microsemi Corporation MICROSEMI CORP-LOWELL
|
SCP-5759 |
LOW CAPACITANCE HYPERABRUPT VARACTOR DIODE 1.5 pF, 22 V, GALLIUM ARSENIDE, HYPERABRUPT VARIABLE CAPACITANCE DIODE
|
Sensitron Semiconductor
|
G8605-25 G8605 G8605-11 G8605-12 G8605-13 G8605-15 |
Aluminum Snap-In Capacitor; Capacitance: 390uF; Voltage: 420V; Case Size: 30x40 mm; Packaging: Bulk 铟镓砷PIN光电二极 Aluminum Snap-In Capacitor; Capacitance: 220uF; Voltage: 420V; Case Size: 25x35 mm; Packaging: Bulk 铟镓砷PIN光电二极 Aluminum Snap-In Capacitor; Capacitance: 680uF; Voltage: 420V; Case Size: 35x50 mm; Packaging: Bulk Aluminum Snap-In Capacitor; Capacitance: 220uF; Voltage: 420V; Case Size: 30x30 mm; Packaging: Bulk Aluminum Snap-In Capacitor; Capacitance: 470uF; Voltage: 420V; Case Size: 30x45 mm; Packaging: Bulk Aluminum Snap-In Capacitor; Capacitance: 330uF; Voltage: 420V; Case Size: 35x30 mm; Packaging: Bulk InGaAs PIN photodiode
|
Hamamatsu Photonics K.K. HAMAMATSU[Hamamatsu Corporation]
|