| PART |
Description |
Maker |
| IXYK140N90C3 |
XPTTM 900V IGBTs
|
IXYS Corporation
|
| IXYJ20N120C3D1 |
1200V XPTTM IGBT
|
IXYS Corporation
|
| IXYA20N65C3D1 |
XPTTM 650V IGBT
|
IXYS Corporation
|
| IXYR50N120C3D1 |
1200V XPTTM IGBT GenX3TM w/ Diode
|
IXYS Corporation
|
| IRG4PF50WD |
900V Warp 20-100 kHz Copack IGBT in a TO-247AC package
|
International Rectifier
|
| IXGE75N100Z IXGE50N90Z IXTE9N65X4U IXGE50N50Z |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1KV V(BR)CES | 75A I(C)
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 900V V(BR)CES | 50A I(C)
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 650V V(BR)DSS | 9A I(D) 晶体管| MOSFET功率模块|独立|650V五（巴西）直| 9A条（丁）
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 500V V(BR)CES | 50A I(C) 晶体管| IGBT功率模块|独立| 500V五（巴西）国际消费电子展| 50A条一（c
|
IXYS, Corp.
|
| FQB2NA90 FQI2NA90 FQB2NA90TM FQI2NA90TU |
900V N-Channel QFET
900V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
| FQI2N90 FQB2N90 FQB2N90TM FQI2N90TU |
900V N-Channel MOSFET
900V N-Channel QFET
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| STB6NB90 6439 |
N - CHANNEL 900V - 1.7 Ohm - 5.8A - D 2 PAK PowerMESH MOSFET
From old datasheet system
N - CHANNEL 900V - 1.7OHM - 5.8A - D2PAK PowerMESHO MOSFET
N-CHANNEL Power MOSFET
|
SGS Thomson Microelectronics
STMicroelectronics
意法半导
ST Microelectronics
|
| STU9NC90ZI STU8NC90Z STU8NC90ZI 7291 |
7 A, 900 V, 1.38 ohm, N-CHANNEL, Si, POWER, MOSFET
N-CHANNEL 900V - 1.1ohm - 7.6A Max220/I-Max220 Zener-Protected PowerMESH?III MOSFET
N-CHANNEL 900V - 1.1ohm - 7.6A Max220/I-Max220 Zener-Protected PowerMESH⑩III MOSFET
N-CHANNEL 900V - 1.1ohm - 7.6A Max220/I-Max220 Zener-Protected PowerMESHIII MOSFET
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN
From old datasheet system
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
