PART |
Description |
Maker |
CY7C4282V03 CY7C4282V-10ASC CY7C4282V-15ASC CY7C42 |
Memory : FIFOs 64K/128K x 9 Low-Voltage Deep Sync FIFOs with Retransmit and Depth Expansion
|
Cypress Semiconductor
|
K5A3240YTC-T855 K5A3340YBC-T855 K5A3240YBC-T855 K5 |
SPECIALTY MEMORY CIRCUIT, PBGA69 Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM
|
http:// SAMSUNG SEMICONDUCTOR CO. LTD.
|
25AA080-I_P 25AA08004 25AA080-I_SN 25LC080-I_SN 25 |
The 25LC080 is a 8K bit Serial Electrically Erasable PROM with memory accessed via a simple Serial Peripheral Interface (SPI) ... The 25C080 is a 8K bit Serial Electrically Erasable PROM with memory accessed via a simple Serial Peripheral Interface (SPI) ... The 25AA080 is a 8K-bit Serial Electrically Erasable PROM with memory accessed via a simple Serial Peripheral Interface (SPI) ... 8K SPI TM Bus Serial EEPROM
|
MICROCHIP[Microchip Technology]
|
AM50DL128CG85IS |
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM SPECIALTY MEMORY CIRCUIT, PBGA88
|
Spansion, Inc.
|
XRAG208 |
432-bit UHF, EPCglobal Class1 Generation2 and ISO 18000-6C, contactless memory chip with user memory
|
STMicroelectronics
|
RD28F3208C3T70 RD28F3208C3B90 |
TVS BIDIRECT 400W 90V SMA 3 VOLT INTEL Advanced BootBlock FlashMemory(C3)Stacked-ChipScalPackageFamilye SPECIALTY MEMORY CIRCUIT, PBGA66
|
INTEL CORP Intel, Corp.
|
K5P2880YCM |
Multi-Chip Package MEMORY 128M Bit 16Mx8 Nand Flash Memory / 8M Bit 1Mx8/512Kx16 Full CMOS SRAM
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
TH50VSF3582AASB |
MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE
|
TOSHIBA
|
M36W0R7050B0 M36W0R7050B0ZAQ M36W0R7050T0 M36W0R70 |
SPECIALTY MEMORY CIRCUIT, PBGA88 128 Mbit (8Mb x16, Multiple Bank, Burst) Flash Memory and 32 Mbit (2Mb x16) PSRAM, 1.8V Supply Multi-Chip Package
|
STMICROELECTRONICS ST Microelectronics
|