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FDMA1430JP - Max rDS(on) = 90 mΩ at VGS = -4.5 V, ID = -2.9 A

FDMA1430JP_8984861.PDF Datasheet


 Full text search : Max rDS(on) = 90 at VGS = -4.5 V, ID = -2.9 A
 Product Description search : Max rDS(on) = 90 at VGS = -4.5 V, ID = -2.9 A


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N-Channel MOSFETs (>500V…900V); Package: PG-TO262-3; VDS (max): 500.0 V; Package: I2PAK (TO-262); RDS(ON) @ TJ=25°C VGS=10: 190.0 mOhm; ID(max) @ TC=25°C: 21.0 A; IDpuls (max): 63.0 A;
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List of Unclassifed Manufacturers
FDMA1430JP Max rDS(on) = 90 mΩ at VGS = -4.5 V, ID = -2.9 A
Fairchild Semiconductor
2SK3365 Super low on-state resistance: RDS(on)1 = 14 m MAX. (VGS = 10 V, ID = 15 A)
TY Semiconductor Co., Ltd
2SK3434 Super low on-state resistance: RDS(on)1 = 20m MAX. (VGS= 10 V, ID = 24A)
TY Semiconductor Co., L...
NDH854P Length/Height 1.02 mm Width 4.55 mm Depth 4.06 mm Power dissipation 1.8 W Transistor polarity P Channel Current Id cont. 5.1 A Voltage Vgs th max. 4.5 V Voltage Vds max 30 V
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FAIRCHILD[Fairchild Semiconductor]
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JFET; Transistor Polarity:N Channel; Breakdown Voltage, V(br)gss:-50V; Zero Gate Voltage Drain Current Min, Idss:0.5mA; Zero Gate Voltage Drain Current Max, Idss:12mA; Gate-Source Cutoff Voltage Max, Vgs(off):-1.5V
INTERSIL[Intersil Corporation]
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Programmable Logic IC; Logic Type:Programmable; No. of Macrocells:189; Package/Case:240-PQFP; Leaded Process Compatible:No; Number of Circuits:1728; Peak Reflow Compatible (260 C):No; Mounting Type:surface mount RoHS Compliant: No
IC MAX 7000 CPLD 32 44-TQFP
MOSFET, N, SO-8; Transistor type:MOSFET; Current, Id cont:4A; Resistance, Rds on:6.7R; Voltage, Vgs Rds on measurement:10V; Case style:SO-8 PowerPak
STMicroelectronics N.V.
意法半导
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
SPP80N10L SPB80N10L SPI80N10L Low Voltage MOSFETs - Power MOSFET, 100V, TO-220, RDSon=14mOhm, 80A, LL
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SIPMOS Power-Transistor
INFINEON[Infineon Technologies AG]
LS4D28-100-RN LS4D28-270-RN LS4D28-271-RN LS4D28-3 Dual N-Channel EPAD Matched Pair MOSFET Array, Vgs= 0.2 V, Enhancement Mode, 8L SOIC, EPAD Enabled 1 ELEMENT, 3.9 uH, GENERAL PURPOSE INDUCTOR, SMD
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Dual N-Channel EPAD Matched Pair MOSFET Array, Vgs= 0.0 V, 8L PDIP, EPAD Enabled
Dual N-Channel EPAD Matched Pair MOSFET Array, Vgs= 0.4 V, Enhancement Mode, 8L PDIP, EPAD Enabled
Quad N-Channel EPAD Matched Pair MOSFET Array, Vgs= 1.4 V, 16L SOIC, EPAD Enabled
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http://
ICE Components, Inc.
ICE COMPONENTS INC
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Pch Power MOSFET; Surface Mount Type: N; Package: VS-8; R DS On (Ω): (max 0.09) (max 0.041) (max 0.03); I_S (A): (max -6) 积极的固定电压稳压器
Fairchild Semiconductor, Corp.
3M Company
SPD08P06P SPU08P06P Low Voltage MOSFETs - Power MOSFET, -60V, I-PAK, RDSon = 0.30
SIPMOS Power-Transistor
Low Voltage MOSFETs - Power MOSFET, -60V, DPAK, RDSon = 0.30
INFINEON[Infineon Technologies AG]
 
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