| PART |
Description |
Maker |
| CFH77 Q62702-G117 |
GaAs HEMT For low noise front end amplifiers up to 20 GHz
|
INFINEON[Infineon Technologies AG]
|
| HMC-ALH216 |
GaAs HEMT MMIC LOW NOISE AMPLIFIER
|
Analog Devices
|
| HMC-ALH50909 |
GaAs HEMT LOW NOISE AMPLIFIER, 71 - 86 GHz
|
Hittite Microwave Corporation
|
| HMC-ALH382 |
GaAs HEMT LOW NOISE AMPLIFIER, 57 - 65 GHz
|
Hittite Microwave Corporation
|
| HMC-ALH435 |
GaAs HEMT MMIC LOW NOISE AMPLIFIER, 5 - 20 GHz
|
Hittite Microwave Corporation
|
| HMC772LC410 |
GaAs HEMT MMIC LOW NOISE AMPLIFIER, 2 - 12 GHz
|
Hittite Microwave Corporation
|
| HMC-ALH14007 |
GaAs HEMT MMIC LOW NOISE AMPLIFIER, 24 - 40 GHz
|
Hittite Microwave Corporation
|
| HMC-ALH376 |
GaAs HEMT MMIC LOW NOISE AMPLIFIER, 35 - 45 GHz
|
Hittite Microwave Corporation
|
| HMC-ALH364 HMC-ALH36409 |
GaAs HEMT MMIC LOW NOISE AMPLIFIER, 24 - 32 GHz
|
Hittite Microwave Corporation
|
| CFY25-20 CFY25-17 CFY25-23 Q62703-F107 Q62703-F106 |
Advanced PFC/PWM Combination Controllers 20-SOIC -40 to 105
Advanced PFC/PWM Combination Controllers 20-PDIP -40 to 105
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) 砷化镓场效应管（低噪声高增益对于前端放大器离子注入平面结构全部镀金）
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET
|
SIEMENS AG
|
| CFY66 CFY66-08 CFY66-08P CFY66-10 CFY66-10P |
HiRel K-Band GaAs Super Low Noise HEMT
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
