| PART |
Description |
Maker |
| MSICSN05120CA MSICSN05120CAE3 MSICSN05120CC MSICSN |
SiC Schottky Diodes
|
Microsemi
|
| APT30SCD65B |
SiC Schottky Diodes
|
Microsemi
|
| IDH03G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
| IDW40G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
| IDH10G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
| LSIC2SD120C08 |
This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C
|
Littelfuse
|
| AN4242 |
New generation of 650 V SiC diodes
|
STMicroelectronics
|
| BZX85C47GP BZX85C15GP BZX85C75GP BZX85C7V5GP BZX85 |
150 V, 2 mA, 1.3 W glass passivated zener diode
SMALL SIGNAL SCHOTTKY DIODES 齐纳二极
5.0V PC real-time clock 齐纳二极
Low capacitance, low series inductance and resistance Schottky diodes
Low capacitance small signal Schottky diodes
Small signal Schotky diodes
|
Fagor
Electronics Industry Public Company Limited
Fairchild Semiconductor, Corp.
|
| WSD705 WSD706 |
Surface Mount Schottky Barrier Diodes
SMALL SIGNAL SCHOTTKY DIODES 30m AMPERES 40 VOLTS
|
Weitron Technology
ETC
|
| IDH08S120 |
thinQ SiC Schottky Diode
|
Infineon Technologies AG
|
| SCS120AG1104 |
SiC Schottky Barrier Diode
|
Rohm
|
