| PART |
Description |
Maker |
| 154-22 153-28 154-18 154-04 154-10 154-14 154-12 1 |
TRANSISTOR | BJT | NPN | 220V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 140V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 260V V(BR)CEO | 7.5A I(C)
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 7.5A I(C)
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 240V V(BR)CEO | 7.5A I(C)
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 40V的五（巴西）总裁| 7.5AI（丙）|个STR - 1 / 4
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 60V的五（巴西）总裁| 7.5AI（丙）|个STR - 1 / 4
TRANSISTOR | BJT | NPN | 280V V(BR)CEO | 7.5A I(C) 晶体管|晶体管| npn型| 280伏特五（巴西）总裁| 7.5AI（丙
|
NXP Semiconductors N.V.
Bel Fuse, Inc.
YEONHO Electronics Co., Ltd.
|
| PMP4501G PMP4501V PMP4501Y PMP4501Y115 |
NPN/NPN matched double transistors; Package: SOT363 (SC-88); Container: Tape reel smd 100 mA, 45 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
|
NXP Semiconductors N.V.
|
| 2SD946 2SD946A 2SD946AQ 2SD946AR 2SD950 2SD951 2SD |
Si NPN triple diffused junction mesa . Line-operated horizontal deflection output.
SI NPN EPITAXIAL PLANAR DARLINGTON 1 A, 50 V, NPN, Si, POWER TRANSISTOR, TO-126
|
PANASONIC[Panasonic Semiconductor]
Panasonic, Corp.
|
| 2SD389A 2SD389AQ 2SD389P 2SD601 2SD601AR 2SD601AS |
Si NPN epitaxial planar. General amplifier.
Si NPN DIFFUSED JUNCTION MESA 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236
Si NPN diffused juction mesa. Medium power amplifier.
|
Panasonic, Corp.
Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
|
| PUMH13115 PEMH13-PUMH13-15 |
NPN/NPN double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD) plastic packages.
NPN/NPN resistor-equipped transistors R1 = 4.7 k? R2 = 47 k?
|
NXP Semiconductors
|
| 2SD1616A 2SD1616 D1616 2SD1616AU 2SD1616-L |
1000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
NPN SILICON TRANSISTORS NPN硅三极管
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 1A I(C) | TO-92
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| PBSS4350SS115 |
50 V, 2.7 A NPN/NPN low VCEsat (BISS) transistor; Package: SOT96-1 (SO8); Container: Tape reel smd 2700 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
|
NXP Semiconductors N.V.
|
| 2N5682 2N5681 2N5681SMD |
100V Vce, 1A Ic, 30MHz NPN bipolar transistor
NPN SILICON TRANSISTORS
Expitaxial Planar NPN Transistors In jedec TO-39 Metal Case(大功率、外延平面NPN晶体管（TO-39金属封装，用于通用、放大器、开关电路）)
|
SEME-LAB[Seme LAB]
Semelab(Magnatec)
|
| PEMH10 PUMH10 |
NPN/NPN resistor-equipped transistors; R1 = 2.2 k惟, R2 = 47 k惟
NPN/NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 47 kΩ
NPN-NPN resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 47 kOhm NPN-NPN配电阻型晶体管，R1=2.2千欧姆，R2=47千欧
|
NXP Semiconductors N.V.
|
| CIL148C CIL148A CIL148B CIL476 CIL768 CIL769 CIL61 |
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 200MA I(C) | TO-106
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 200MA I(C) | TO-105
TRANSISTOR | BJT | NPN | 12V V(BR)CEO | TO-106
TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 200MA I(C) | TO-106
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | TO-106
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 200MA I(C) | TO-106 晶体管|晶体管|叩| 60V的五（巴西）总裁| 200mA的一（c）|06
TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 200MA I(C) | TO-106 晶体管|晶体管|叩| 45V的五（巴西）总裁| 200mA的一（c）|06
TRANSISTOR | BJT | NPN | 25V V(BR)CEO | TO-106
TRANSISTOR | BJT | NPN | 32V V(BR)CEO | 200MA I(C) | TO-106
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 200MA I(C) | TO-106
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 200MA I(C) | TO-106
|
Electronic Theatre Controls, Inc.
|
| 2N6724 2N6725 2N6724STOA 2N6724STOB 2N6724STZ |
NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS 1000 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
NPN Darlington Transistor
|
Zetex Semiconductor PLC
ZETEX[Zetex Semiconductors]
|
