| PART |
Description |
Maker |
| PMGD290UCEA |
20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET
|
NXP Semiconductors
|
| SM7785-41 |
7.725-8.500 GHz 12 Watt Linear Power Amplifier
|
Stealth Microwave, Inc.
|
| SIT9367 |
220 to 725 MHz Ultra-low Jitter Differential Oscillator
|
SiTime Corp.
|
| PTFA070601E PTFA070601F |
Thermally-Enhanced High Power RF LDMOS FETs 60 W, 725 鈥?770 MHz
|
Infineon Technologies AG
|
| PTFA071701E PTFA071701F |
Thermally-Enhanced High Power RF LDMOS FETs 170 W, 725 ?770 MHz
|
Infineon Technologies AG
|
| B69842N5807A150 |
Microwave Ceramics and Modules 2 Pole Filter for W-LAN 5GHz /5.725-5.875 Band
|
EPCOS AG
EPCOS[EPCOS]
|
| P295BQ392M500A |
Film, Metallized Paper, Safety, P295, 3900 pF, 20%, 1,500 V, 500 V, 115C, Lead Spacing = 15mm
|
Kemet Corporation
|
| P295BL272M500A |
Film, Metallized Paper, Safety, P295, 2700 pF, 20%, 1,500 V, 500 V, 115C, Lead Spacing = 15mm
|
Kemet Corporation
|
| P295BJ152M500A |
Film, Metallized Paper, Safety, P295, 1500 pF, 20%, 1,500 V, 500 V, 115C, Lead Spacing = 15mm
|
Kemet Corporation
|
| SA20AG |
500 Watt Peak Power MiniMOSORB Zener Transient Voltage Suppressors 500 W, UNIDIRECTIONAL, SILICON, TVS DIODE
|
ON Semiconductor
|
| PDTD113ZT PDTD113ZT215 PDTD113ZT-13 PDTD113ZT-15 |
NPN 500 mA, 50 V resistor-equipped transistor; R1 = 1 kOhm, R2 = 10 kOhm
NPN 500 mA, 50 V resistor-equipped transistor R1 = 1 kW, R2 = 10 kW
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 1 kOhm, R2 = 10 kOhm; Package: SOT23 (TO-236AB); Container: Tape reel smd 500 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
NPN 500 mA, 50 V resistor-equipped transistor; R1 = 1 kW, R2 = 10 kW
|
NXP Semiconductors N.V.
|
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