| PART |
Description |
Maker |
| SF8JZ47 SF8GZ47 |
THYRISTOR SILICON PLANAR TYPE MEDIUM POWER CONTROL APPLICATIONS
TOSHIBA THYRISITOR SILICON PLANAR TYPE
|
TOSHIBA[Toshiba Semiconductor]
|
| XN04322G |
Silicon NPN epitaxial planar type (Tr1), Silicon PNP epitaxial planar type (Tr2)
|
Panasonic
|
| UP04314 |
Silicon NPN epitaxial planar type (Tr1) / Silicon PNP epitaxial planar type (Tr2)
|
Panasonic Semiconductor
|
| UP04601 |
Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2)
|
PANASONIC[Panasonic Semiconductor]
|
| SM12J45A SM12G45 SM12G45A SM12J45 |
BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE AC POWER CONTROL APPLICATIONS
TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE
TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE
TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE
|
TOSHIBA[Toshiba Semiconductor]
http://
Toshiba, Corp.
|
| 2SD2374 2SD2374A |
Silicon PNP epitaxial planar type(For power amplification)
Silicon NPN triple diffusion planar type(For power amplification)
|
PANASONIC[Panasonic Semiconductor]
|
| MT3S03AT |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
|
Toshiba Semiconductor
|
| MT3S03AU |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
|
Toshiba Semiconductor
|
| XN09D61 |
Silicon PNP epitaxial planar type (Tr) / Silicon epitaxial planar type (SBD)
|
Panasonic Semiconductor
|
| 1N962 1N963 1N967 1N978 1N957 1N958 1N959 1N960 1N |
30 V, 4.2 mA, silicon planar zener diode
7.5 V, 16.5 mA, silicon planar zener diode
SILICON PLANAR ZENER DIODES
14PX2R TH STRAIGHT
CONN, 3PX1R TH STRAIGHT
CONN. 2 POSITIONS ALIGNED 2.54MM
1X30FT SELF-FUSING TAPE
DIP Socket; No. of Contacts:28; Pitch Spacing:0.1"; Row Spacing:0.6"; Terminal Type:Solder Tail; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):No RoHS Compliant: Yes 硅平面稳压二极管
CONN HDR 8POS RT ANG POST 硅平面稳压二极管
DIP Socket; No. of Contacts:28; Pitch Spacing:0.1"; Row Spacing:0.6"; Terminal Type:Wire Wrap; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):No RoHS Compliant: Yes
10 V, 12.5 mA, silicon planar zener diode
39 V, 3.2 mA, silicon planar zener diode
6.8 V, 18.5 mA, silicon planar zener diode
|
http://
SEMTECH[Semtech Corporation]
Semtech, Corp.
Honey Technology
|
