PART |
Description |
Maker |
2SB1198 2SB1198K A5800312 2SB1198KQ |
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 500MA I(C) | SC-59 From old datasheet system Low-frequency Transistor(-80V, -0.5A) Transistors > Small Signal Bipolar Transistors(up to 0.6W) Low-frequency Transistor(-80V/ -0.5A)
|
ROHM[Rohm]
|
2SB1197K A5800311 2SB1197KQ |
Low Frequency Transistor(-32V/ -0.8A) Transistors > Small Signal Bipolar Transistors(up to 0.6W) From old datasheet system Low Frequency Transistor(-32V, -0.8A) 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
|
Rohm
|
2SB1386 2SB1412 2SB1326 A5800356 2SB1436 |
From old datasheet system Low Frequency Transistor(-20V/-5A) Low Frequency Transistor(-20V,-5A) 低频晶体管(- 20V的,- 5A型)
|
Rohm Toshiba, Corp.
|
2SD2396 D2396 2SD2396H |
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-220VAR 晶体管|晶体管|叩| 60V的五(巴西)总裁| 3A条一(c)|20VAR Low Frequency Transistor (60V, 3A) Low Frequency Transistor (60V/ 3A)
|
PCA Electronics, Inc. Rohm CO.,LTD.
|
CSA1162Y-3E CSA1162 CSA1162GR_G-3F CSA1162GRG-3F C |
0.150W Low Frequency PNP SMD Transistor. 50V Vceo, 0.150A Ic, 200 - 400 hFE. Complementary CSC2712 LOW FREQUENCY GENERAL PURPOSE AMPLIFIER TRANSISTOR TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 150MA I(C) | SOT-23 晶体管|晶体管|进步党| 50V五(巴西)总裁| 150毫安一c)| SOT - 23封装
|
CDIL[Continental Device India Limited]
|
2SC5434 2SC5434-T1 |
Reduced noise high frequency amplification transistor NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION High-Frequecy Low-Noise Amplifier NPN Transistor(高频低噪声放大器NPN晶体
|
NEC[NEC] NEC Corp.
|
2SC3355 2SC3355-T |
For amplify low noise and high frequency HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
|
NEC[NEC]
|
2SC4957 2SC4957-T1 2SC4957-T2 2SC4957NE68539E 2SC4 |
Microwave low-noise amplification silicon transistor HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD 高频低噪声放大器NPN硅外延晶体管4个引脚微型模 SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
|
NEC, Corp. NEC Corp.
|
2SB1431 |
Silicon power transistor From old datasheet system PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
|
NEC[NEC]
|
2SD560 2SD560LB 2SD560MB |
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset 晶体管|晶体管|达林顿|叩| 100V的五(巴西)总裁| 5A条一(c)| TO - 220AB现有 TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 5A I(C) | TO-220AB NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING Silicon power transistor
|
NEC, Corp. NEC Corp.
|
KTD545 |
General Purpose Transistor EPITAXIAL PLANAR NPN TRANSISTOR (LOW FREQUENCY POWER AMP, ELECTRONIC GOVERNOR) EPITAXIAL PLANAR NPN TRANSISTOR (LOW FREQUENCY POWER AMP/ ELECTRONIC GOVERNOR)
|
Korea Electronics (KEC) KEC[KEC(Korea Electronics)] KEC Holdings
|
CSB834 CSB834O CSB834Y |
30.000W Low Frequency PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 60 - 200 hFE. Complementary CSD880 30.000W Low Frequency PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSD880O 30.000W Low Frequency PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSD880Y
|
Continental Device India Limited
|