| PART |
Description |
Maker |
| SVD8N60F SVD8N60T |
8A, 600V NCHANNEL MOSFET
|
Silan Microelectronics Joint-stock
|
| AM29LV010B-45RJC AM29LV010B-55JC AM29LV010B-55JE A |
A 20V Single N-Channel HEXFET Power MOSFET in a DirectFET ST Package
100V Single N-Channel HEXFET Power MOSFET in a SO-8 package
80V Single N-Channel HEXFET Power MOSFET in a SO-8 package
-40V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package
20V Dual N-Bidirectional HEXFET Power MOSFET in a 6-Lead FlipFET
30V N-Channel PowerTrench MOSFET 30VN沟道的PowerTrench MOSFET
-12V Single P-Channel HEXFET Power MOSFET in a TSSOP-8 package x8闪存EEPROM
1 Mb (128K x 8) Uniform Sector, Flash Memory 128K X 8 FLASH 3V PROM, 70 ns, PQCC32
x8 Flash EEPROM x8闪存EEPROM
|
Toshiba, Corp.
Advanced Micro Devices, Inc.
Spansion, Inc.
|
| IRL3714L IRL3714S IRL3714 IRL3714STRR |
TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 36A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 20V的五（巴西）直| 36A条（丁）|63AB
HEXFET? Power MOSFET
Power MOSFET(Vdss=20V, Rds(on)max=20mohm, Id=36A)
20V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
20V Single N-Channel HEXFET Power MOSFET in a TO-262 package
20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
|
International Rectifier, Corp.
http://
IRF[International Rectifier]
|
| AM29F040-120/BUA AM29F040-120/BXA AM29F040-150DEB |
150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; A IRF3315S with Standard Packaging
150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRF3315S with Lead Free Packaging
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package; A IRLR8721PBF with Standard Packaging
60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; A IRFZ34E with Standard Packaging
100V Single N-Channel HEXFET Power MOSFET in a I-Pak package; A IRFU120Z with Standard Packaging
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package; Similar to IRFR48Z with Lead Free Packaging
30V Single N-Channel HEXFET Power MOSFET in a TO-262 package; Similar to IRL3803L with Lead Free Packaging
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRFZ24NS with Lead Free Packaging
x8 Flash EEPROM x8闪存EEPROM
|
Advanced Micro Devices, Inc.
|
| IRFR5505 IRFU5055 IRFU5505 IRFRU5505 IRFR5505PBF I |
P Channel Surface Mount HEXFET Power MOSFET(P娌??琛ㄨ创??EXFET???MOS?烘?搴??)
-55V Single P-Channel HEXFET Power MOSFET in a I-Pak package
-55V Single P-Channel HEXFET Power MOSFET in a D-Pak package
Power MOSFET(Vdss=-55V, Rds(on)=0.11ohm, Id=-18A)
HEXFET? Power MOSFET
|
IRF[International Rectifier]
http://
|
| IRFB23N15 IRFSL23N15D IRFB23N15DPBF IRFS23N15D |
Power MOSFET(Vdss=150V/ Rds(on)max=0.090ohm/ Id=23A)
150V Single N-Channel HEXFET Power MOSFET in a TO-262 package
150V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
|
International Rectifier
|
| IRF3704 IRF3704L IRF3704S IRF3704STRL IRF3704STRR |
20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
20V Single N-Channel HEXFET Power MOSFET in a TO-262 package
20V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A?
Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A)
Power MOSFET(Vdss=20V Rds(on)max=9.0mohm Id=77A)
Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A?)
Power MOSFET(Vdss=20V/ Rds(on)max=9.0mohm/ Id=77A)
CONNECTOR, PICOFLEX, 4WAY; Connector type:Wire-to-Board; Ways, No. of:4; Termination method:Crimp; Rows, No. of:2; Pitch:1.27mm; Series:91935 RoHS Compliant: Yes 功率MOSFET（减振钢板基本\u003d 20V的，的Rds（on）最大值\u003d 9.0mohm，身份证\u003d 77A条?
TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 77A I(D) | TO-263AB
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| IRFIB7N50A IRFIB7N50APBF |
6.6 A, 500 V, 0.52 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOSFET(Vdss=500V, Rds(on)max=0.52ohm, Id=6.6A)
HEXFET? Power MOSFET
500V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
|
IRF[International Rectifier]
|
| IRFI634G ORFO634G |
POWER MOSFET 功率MOSFET
Power MOSFET(Vdss=250V / Rds(on)=0.45ohm / Id=5.6A)
250V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| STB55NE06 5405 |
N-Channel Enhancement Mode "SINGLE FEATURE SIZETM " Power MOSFET(N沟道增强模式功率MOSFET) N沟道增强模式“的单一的功能SIZETM”功率MOSFET（不适用沟道增强模式功率MOSFET的）
N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ” POWER MOSFET
From old datasheet system
N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET
N - CHANNEL ENHANCEMENT MODE ?SINGLE FEATURE SIZE ?POWER MOSFET
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
| IRFBC30AS IRFBC30L IRFBC30AL IRFBC30ASTRL IRFBC30A |
600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
600V Single N-Channel HEXFET Power MOSFET in a TO-262 package
HEXFET? Power MOSFET
Power MOSFET(Vdss=600V/ Rds(on)max=2.2ohm/ Id=3.6A)
600V,3.6A,N-Channel HEXFET Power MOSFET for SMPS(600V,3.6A,N沟道 HEXFET 功率MOS场效应管,用于开关模式电
Power MOSFET(Vdss=600V, Rds(on)max=2.2ohm, Id=3.6A) 功率MOSFET（减振钢板基本\u003d 600V电压的Rds（on）最大值\u003d 2.2ohm，身份证\u003d 3.6A
|
IRF[International Rectifier]
International Rectifier, Corp.
|
