PART |
Description |
Maker |
TH58BYG3S0HBAI4 |
BENAND (Built-in ECC SLCNAND)
|
TOSHIBA
|
TC58BVG0S3HTAI0 |
BENAND (Built-in ECC SLCNAND)
|
TOSHIBA
|
TC58BVG0S3HTA00 |
BENAND (Built-in ECC SLCNAND)
|
TOSHIBA
|
KVR533D2E4K2/1G |
1024MB 533MHz DDR2 ECC CL4 DIMM (Kit of 2) 1024MB33 ECC DDR2记忆CL4内存(包2
|
Vishay Intertechnology, Inc.
|
M374S6553BTS-C7A M366S2953BTS-C7A M366S3354BTS M36 |
SDRAM Unbuffered Module 168pin Unbuffered Module based on 512Mb B-die 62/72-bit Non ECC/ECC
|
SAMSUNG[Samsung semiconductor]
|
KMM372F213CS KMM372F213CK KMM372F1600BK |
2M x 72 DRAM DIMM with ECC using 2Mx8, 2K Refresh, 3.3V 16M x 72 DRAM DIMM with ECC using 16Mx4, 4K 8K Refresh, 3.3V 1,600 × 72的DRAM内存ECC的使6Mx4KK的刷新,3.3
|
Samsung Semiconductor Co., Ltd.
|
KMM372C1600BK KMM372C1600BS KMM372C1680BK KMM372C1 |
2M x 72 DRAM DIMM with ECC using 2Mx8, 2K Refresh, 5V 16M x 72 DRAM DIMM with ECC Using 16Mx4, 4K 8K Refresh 5V
|
Samsung Electronic Samsung semiconductor
|
IBM11N4845BB IBM11N4845CB |
4M x 72 Chip-Kill Protect ECC-on-DIMM Module(4M x 72 带纠错代码保护的小外形双列直插动态RAM模块) 4米72片,杀死保护ECC的上内存模块米72带纠错代码保护的小外形双列直插动态内存模块) 4M x 72 Chip-Kill Protect ECC-on-DIMM Module(4M x 72 甯????唬????ょ?灏??褰㈠?????????AM妯″?)
|
International Business Machines, Corp. IBM Microeletronics
|
CXD8941BQ |
CMOS ECC and RLL 1-7 Encoder
|
ETC
|
SLN02G72F1BK1MT-CCRT SLN02G72F1BK1MT-DCRT |
2048MB DDR3L ?SDRAM ECC SO-UDIMM
|
List of Unclassifed Man...
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