PART |
Description |
Maker |
MC10XS3435BPNA MC10XS3435DPNA 10XS343509 MC10XS343 |
Quad High Side Switch (Dual 10 mOhm, Dual 35 mOhm)
|
Freescale Semiconductor, Inc
|
NVMFD5485NL |
60V, 44 mOhm, 20 A Dual N-Channel Dual SO-8FL Power MOSFET
|
ON Semiconductor
|
NVMFD5853NL |
Power MOSFET 40V 34A 10 mOhm Dual N-Channel SO-8FL Logic Level
|
ON Semiconductor
|
2N7002T |
N-channel TrenchMOS FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 0.3 A; R<sub>DS(on)</sub>: 5000@10V5300@4.5V mOhm; V<sub>DS</sub>max: 60 V 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
|
NXP Semiconductors N.V.
|
PSMN7R0-100PS |
N-channel 100V 6.8 MOhm Standard Level MOSFET
|
Philips Semiconductors
|
MTDF1P02HD |
DUAL TMOS POWER MOSFET 1.6 AMPERES 20 VOLTS RDS(on) = 175 mOHM
|
Motorola, Inc.
|
STE180N10 |
N - CHANNEL 100V - 5.5 mohm - 180A - ISOTOP POWER MOSFET
|
ST Microelectronics
|
NVD5890NL |
40 V, 3.7 mOhm, 123 A, Single N−Channel Power MOSFET
|
ON Semiconductor
|
NTTFS4937NTAG NTTFS4937NTWG |
Power MOSFET 30V 75A 4.5 mOhm Single N-Channel u8FL 11000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
Rectron Semiconductor
|
PHN405 |
4 N-channel 60 mohm FET array enhancement mode MOS transistors
|
NXP Semiconductors PHILIPS[Philips Semiconductors]
|
STE180NE10 |
N-CHANNEL 100V - 4.5 MOHM -180A ISOTOP STRIPFET POWER MOSFET N-CHANNEL 100V - 4.5 mohm - 180A ISOTOP STripFET POWER MOSFET
|
ST Microelectronics
|