| PART |
Description |
Maker |
| KDS114E KDS114E04 |
SILICON EPITAXIAL PLANAR DIODE
SILICON, VHF BAND, MIXER DIODE
|
KEC(Korea Electronics)
|
| 1S1555 1S1553 1S1554 |
Silicon epitaxial planar type diode.
Silicon Epitaxial Planner Type Diode
|
Panasonic
TOSHIBA[Toshiba Semiconductor]
|
| KDV152 KDV152M |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO FOR CB/C/P PLL)
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO FOR CB,C/P PLL) 变容二极管外延硅平面二极管（振荡器的文件，碳/磷锁相环
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
KEC Holdings
|
| 015A5.6 015A5.1 015A4.7 015A4.3 015A3.9 015A3.6 01 |
Silicon diode for constant voltage regulation applications
DIODE SILICON EPTAXIAL PLANAR TYPE
From old datasheet system
PCB Filters RoHS Compliant: Yes
CBE T9-711C-12 二极管外延硅平面
Diode Silicon Epitaxial Planar Type 二极管外延硅平面
CBE TA45-AN21F120C0 二极管外延硅平面
Diode, Constant Voltage Regulator Diode
|
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
Toshiba, Corp.
|
| DSEI60 DSEI60-06 DSEI60-06A DSEI600V |
Fast Recovery Epitaxial Diode (FRED) 快速恢复外延二极管（弗雷德
Fast Recovery Epitaxial Diode (FRED) 60 A, 600 V, SILICON, RECTIFIER DIODE, TO-247AD
|
IXYS, Corp.
ETC
IXYS[IXYS Corporation]
|
| MC981 |
Diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V.
DIODE FOR HIGH SPEED SWICHING APPLICATION SILICON EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
| 1N2282 1N1185A 1N1612 1N3055 1N4510 1N3573R 1N1581 |
35 A, 300 V, SILICON, RECTIFIER DIODE, DO-5
40 A, 150 V, SILICON, RECTIFIER DIODE, DO-5
5 A, 50 V, SILICON, RECTIFIER DIODE, DO-4
0.125 A, SILICON, SIGNAL DIODE
12 A, 1000 V, SILICON, RECTIFIER DIODE, DO-4
3.5 A, 500 V, SILICON, RECTIFIER DIODE, DO-4
3 A, 50 V, SILICON, RECTIFIER DIODE, DO-4
1 A, 400 V, SILICON, SIGNAL DIODE, DO-4
1 A, 200 V, SILICON, SIGNAL DIODE, DO-4
0.8 A, SILICON, SIGNAL DIODE
35 A, 800 V, SILICON, RECTIFIER DIODE, DO-5
275 A, 150 V, SILICON, RECTIFIER DIODE, DO-9
|
|
| APT30D20SG APT30D20B APT30D20B_05 APT30D20BG APT30 |
30 A, 200 V, SILICON, RECTIFIER DIODE, TO-247
Fast Recovery Epitaxial Diode; Package: D3 [S]; IO (A): 30; VR (V): 200; trr (nsec): 21; VF (V): 1.1; Qrr (nC): 150; 30 A, 200 V, SILICON, RECTIFIER DIODE
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
|
Advanced Power Technolo...
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| KDV350 |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO)
|
KEC[KEC(Korea Electronics)]
|
| KDV214E |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(TV TUNING)
|
KEC[KEC(Korea Electronics)]
|
| DSEE15-12CC |
HiPerDynFRED Epitaxial Diode(正向电流15A的HiPerDynFRED外延型二极管) 15 A, 1200 V, SILICON, RECTIFIER DIODE
|
IXYS Corporation
IXYS, Corp.
|
| KDV287E |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(UHF SHF TUNING)
|
KEC(Korea Electronics)
|
|
