| PART |
Description |
Maker |
| M5M44400AWJ M5M44400ATP M5M44400ART M5M44400AL M5M |
FAST PAGE MODE 4194304 BIT DYNAMIC RAM 快速页面模194304位动态随机存储器
From old datasheet system
(J/L/TP/RT) Fast Page Mode 4MBit DRAM
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| MSM51V16400D MSM51V16400DSL MSM51V16400D-50SJ MSM5 |
4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE 4194304字4位动态随机存储器：快速页面模式型
DRAM / FAST PAGE MODE TYPE
|
OKI electronic components
OKI[OKI electronic componets]
OKI SEMICONDUCTOR CO., LTD.
|
| MSM51V17405A |
4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO
DRAM / FAST PAGE MODE TYPE
|
OKI electronic components
OKI[OKI electronic componets]
|
| KM44C256C KM44C256C-6 KM44C256C-7 KM44C256C-8 KM44 |
256k x 4Bit CMOS DRAM with Fast Page Mode
256 x 4 Bit CMOS Dynamic RAM with Fast Page Mode
|
Samsung Electronics
Samsung semiconductor
|
| MSM51V16160A |
DRAM / FAST PAGE MODE TYPE
1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
|
OKI SEMICONDUCTOR CO., LTD.
OKI[OKI electronic componets]
OKI electronic components
|
| KM44C256D KM44C256D-6 KM44C256D-7 KM44C256D-8 |
256k x 4Bit CMOS DRAM with Fast Page Mode
256 x 4 Bit CMOS Dynamic RAM with Fast Page Mode 256 × 4位CMOS动态随机存储器的快速页面模
|
Samsung Electronics
Samsung Semiconductor Co., Ltd.
|
| MSM5117800C MSM5117800C-60TS-L |
2M X 8 FAST PAGE DRAM, 60 ns, PDSO28
2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
|
OKI ELECTRIC INDUSTRY CO LTD
OKI[OKI electronic componets]
OKI electronic components
|
| K4F160412D K4F160411D-BL50 |
4M x 4Bit CMOS Dynamic RAM with Fast Page Mode 4米4位的CMOS动态随机存储器的快速页面模
4M X 4 FAST PAGE DRAM, 50 ns, PDSO24
|
Samsung Semiconductor Co., Ltd.
|
| MSM51V17405D MSM51V17405DSL MSM51V17405D-70SJ MSM5 |
DRAM / FAST PAGE MODE TYPE
4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO 4194304字4位动态随机存储器：快速页面模式型与江
IC 4-BIT 2-PORT BUS SW 16-QSOP 4194304字4位动态随机存储器：快速页面模式型与江
|
OKI electronic components
OKI[OKI electronic componets]
OKI SEMICONDUCTOR CO., LTD.
TE Connectivity, Ltd.
|
| K4F640811B K4F660811B K4F660811B-JC-50 K4F660811B- |
8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 45ns
8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 60ns
8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 50ns
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K4F16708112D K4F160811D-B K4F160812D K4F160812D-B |
2M x 8Bit CMOS Dynamic RAM with Fast Page Mode Data Sheet
2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle.
2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle.
|
Samsung Electronic
|
