| PART |
Description |
Maker |
| MNA-7 MNA-SERIES MNA-2 MNA-3 MNA-4 MNA-5 MNA-6 |
Monolithic Amplifiers High Directivity, 50? 0.5 to 5.9 GHz
Monolithic Amplifiers High Directivity 50 0.5 to 5.9 GHz
Monolithic Amplifiers High Directivity, 50з, 0.5 to 5.9 GHz
Monolithic Amplifiers High Directivity, 50, 0.5 to 5.9 GHz
|
MINI[Mini-Circuits]
|
| NE5510179A-T1 NE5510179A |
3.5V的操作硅射频功率MOSFET1.9 GHz的输电功
3.5V OPERATION SILICON RF POWER MOSFET FOR 1.9 GHZ TRANSMISSION AMPLIFIERS
3.5 V OPERATION SILICON RF POWER MOSFET FOR 1.9 GHZ TRANSMISSION AMPLIFIERS
|
NEC Corp.
NEC[NEC]
CEL[California Eastern Labs]
|
| SKD146-L100 SKD146_12-L100 SKD146_16-L100 SKD146/1 |
Transistor; Type: Amplifiers/Bipolar; VCEO (V): 12; Ic (A): 0.075; Pc (W): 0.7; hFE: 100 to 200; fT (GHz) typ: 7.8; Cob (pF) max: 0.9; NF (dB) typ: 1; Package: MPAK
Transistor; Type: Amplifiers/Bipolar; VCEO (V): 4; Ic (A): 0.035; Pc (W): 0.05; hFE: 70 to 150; fT (GHz) typ: 20; Cob (pF) max: 0.15; NF (dB) typ: 1.15; Package: CMPAK-4
3-Phase Bridge Rectifier IGBT braking chopper
|
Semikron International
|
| DG03-166 |
MONOLITHIC AMPLIFIERS 50з BROADBAND DC to 8 GHz
|
MINI[Mini-Circuits]
|
| TA060-120-15-27 |
6.0 ?12.0 GHz 17dB Gain 27dBm Amplifiers
|
Transcom, Inc.
|
| MERA-556 |
Surface Mount Dual Matched MMIC Amplifiers 50 High Dynamic Range DC to 2.2 GHz
Surface Mount Dual Matched MMIC Amplifiers 50з High Dynamic Range DC to 2.2 GHz
|
MINI[Mini-Circuits]
|
| AD8353 AD8353ACP-REEL7 AD8353-EVAL AD8353ACP-R2 |
100 MHz-2.7 GHz RF Gain Block
100 MHz - 2.7 GHz RF Gain Blocks, Silicon Bipolar Amplifiers
|
Analog Devices, Inc.
AD[Analog Devices]
|
| RA03M3540MD RA03M3540MD10 RA03M3540MD-101 |
RoHS Compliance , 350-400MHz 38dBm 7.2V, 2 Stage Amp. For PORTABLE RADIO
350 MHz - 400 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
|
Mitsubishi Electric Semiconductor
|
| TA053-059-38-36 |
5.3 - 5.9 GHz 4 W Amplifiers
5.3 - 5.9 GHz 4 W Amplifiers
|
Transcom, Inc.
|
| HMC552LP4 HMC552LP4E |
GaAs MMIC MIXER w/ INTEGRATED LO AMPLIFIER, 1.6 - 3.0 GHz
Analog & Mixed-Signal Processing -> Amplifiers
|
Hittite Microwave Corporation
|
| Q62702-F775 |
NPN Silicon RF Transistor (For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 1 mA to 20 mA.)
|
SIEMENS AG
|
| RFS1006 PRFS-1006-0007 PRFS-1006-0008 PRFS-1006-00 |
3.4-3.6 GHz Power Amplifier 3400 MHz - 3600 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
3.4-3.6 GHz Power Amplifier 3号至三月六日GHz功率放大
Single-band power amplifiers
The RFS1006 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in a transmit applications in the 3.4-3.6 ...
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
ANADIGICS[ANADIGICS Inc]
|
