PART |
Description |
Maker |
STD35NF06L |
N-CHANNEL 60V 0.014 OHM 35A DPAK STRIPFET II MOSFET N-CHANNEL 60V - 0.014ohm - 35A DPAK STripFETII MOSFET
|
ST Microelectronics STMicroelectronics
|
STD35NF06 |
N-CHANNEL 60V 0.018 OHM 55A - DPAK - STRIPFET II POWER MOSFET N-CHANNEL 60V - 0.018ohm - 35A DPAK STripFETII MOSFET N-CHANNEL 60V - 0.018ohm - 35A DPAK STripFET⑩II MOSFET
|
ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
|
2N700007 2N7000 2N7002 |
N-channel 60V - 1.8Ω - 0.35A - SOT23-3L / TO-92 STripFET?/a> Power MOSFET N-channel 60V - 1.8Ω - 0.35A - SOT23-3L / TO-92 STripFET Power MOSFET N-channel 60V - 1.8ヘ - 0.35A - SOT23-3L / TO-92 STripFET⑩ Power MOSFET
|
STMicroelectronics
|
BYY58-900 BYY57 BYY57-100 BYY57-1000 BYY57-1100 BY |
35A Silicon Power Rectifier Diode 35 A, 900 V, SILICON, RECTIFIER DIODE 35A Silicon Power Rectifier Diode 35A条硅功率整流二极 35A Silicon Power Rectifier Diode 35 A, 1400 V, SILICON, RECTIFIER DIODE
|
ZETEX[Zetex Semiconductors] Zetex Semiconductor PLC
|
KBU3501-G KBU3502-G KBU3504-G KBU3506-G KBU3510-G |
Bridge Rectifiers, V-RRM=600V, V-DC=600V, I-(AV)=35A Bridge Rectifiers, V-RRM=50V, V-DC=50V, I-(AV)=35A Bridge Rectifiers, V-RRM=100V, V-DC=100V, I-(AV)=35A Bridge Rectifiers, V-RRM=200V, V-DC=200V, I-(AV)=35A Silicon Bridge Rectifiers Bridge Rectifiers, V<sub>RRM</sub>=1000V, V<sub>DC</sub>=1000V, I<sub>(AV)</sub>=35A Bridge Rectifiers, V-RRM=800V, V-DC=800V, I-(AV)=35A Bridge Rectifiers, V-RRM=400V, V-DC=400V, I-(AV)=35A
|
Comchip Technology
|
MBR3580 MBR3535 MBR3530 MBR35100 MBR3520 MBR3540 M |
35 Amp Rectifier 20 to 100 Volts Schottky Barrier 35A, 60V ultra fast recovery rectifier
|
MCC[Micro Commercial Components]
|
GBPC3501W GBPC3510W GBPC35005 GBPC35005W GBPC3501 |
600V; 35A glass passivated bridge rectifier HIGH CURRENT SILICON BRIDGE RECTIFIER(VOLTAGE - 50 to 1000 Volts CURRENT - 35 Amperes) Dual Audio Operational Amplifier 8-TSSOP -40 to 85 35 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE 35A GLASS PASSIVATED BRIDGE RECTIFIER 35 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE
|
Pan Jit International Inc. DIODES[Diodes Incorporated] Diodes, Inc.
|
RJK03E9DPA RJK03E9DPA-00-J5A |
30V, 35A, 4.3m max N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
RJK03N3DPA |
30V, 35A, 4.7m max. Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
FAN1117AD285X FAN1117AT33X FAN1117AS285X |
FETs - Nch 60VFETs - Nch 150VFETs - Nch 150V2.85 V FIXED POSITIVE LDO REGULATOR, 1.2 V DROPOUT, PSSO2
|
FAIRCHILD SEMICONDUCTOR CORP
|
BP35-06G BP35-08G BP35-005G BP35-01G BP35-02G BP35 |
35A HIGH CURRENT SILICON BRIDGE RECTIFIERS
|
Frontier Electronics.
|