| PART |
Description |
Maker |
| PTCSGM3T071DBE PTCSGM3T081DBE PTCSGM3T091DBE PTCSG |
Well-defined protection temperature levels
|
Vishay Siliconix
|
| M34S32WMN6T M34S32 M34S32BN M34S32BN1T M34S32BN5T |
32K Serial I2C Bus EEPROM With User-Defined Read-Only Block and 32-Byte OTP Page 32K的串行I2C总线的EEPROM与用户定义的只读块和32字节检察官
32K Serial I 2 C Bus EEPROM With User-Defined Read-Only Block and 32-Byte OTP Page
|
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
SGS Thomson Microelectronics
|
| LTUC455D LTUC455G LTUC455E |
TEMPERATURE COEFFICIENT OF CENTER FREQUENCY SHALL BE DEFINED AS THE AVERAGE OF THE CENTRAL FREQUECY.
|
Shoulder Electronics Li...
|
| M34S32 |
32K Serial IIC Bus EEPROM With User-Defined Read-Only Block and 32-Byte OTP Page(32K串行IIC总线EEPROM) 32K的IIC总线串行EEPROM的用户定义只读块32字节检察官页（32K的串行总线EEPROM的国际进口许可证
|
意法半导
STMicroelectronics N.V.
|
| AX-SIP-SFEU |
Ultra-Low Power, Ultra Compact, AT Command / API Controlled, Sigfox Verified Transceiver SiP
|
ON Semiconductor
|
| MC56F8323EVM |
Definitions, acronyms and abbreviations for terms used in this document are defined below for reference.
|
Freescale Semiconductor...
|
| NMA....SI |
Fusible Type Metal Film Resistors, Fusible resistor for constant current designed for overload protection, Flame retardant coating, Defined switch-off behavior
|
Vishay
|
| SKS |
Fusible Type Carbon Film Resistors, Fusible resistor for constant voltage designed for over load protection, Special construction opens the resistor at a specified overload, Non inflammable coating, Defined switch-off behavior
|
Vishay
|
| 24C16 ST25C16 ST25C16B1TR ST25C16B3TR ST25C16B5TR |
MOSFET; Transistor Polarity:Dual P Channel; Drain Source Voltage, Vds:-30V; Continuous Drain Current, Id:-6.4A; Package/Case:PowerPAK 1212-8 16千位串行I2C总线的EEPROM与用户定义的块写保护
16 Kbit Serial I2C Bus EEPROM with User-Defined Block Write Protection 16千位串行I2C总线的EEPROM与用户定义的块写保护
MOSFET, DUAL NN POWERPAKMOSFET, DUAL NN POWERPAK; Transistor type:MOSFET; Transistor polarity:Dual N; Voltage, Vds max:100V; Case style:PowerPak SO-8; Current, Id cont:1.8A; Current, Idm pulse:10A; Power, Pd:1.3W; Resistance, Rds
MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-20V; Continuous Drain Current, Id:-3.6A; On-Resistance, Rds(on):0.065ohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:MICRO FOOT; Leaded Process Compatible:No
MOSFET, DUAL, PP, POWERPAK; Transistor type:MOSFET; Current, Id cont:7A; Resistance, Rds on:0.02R; Voltage, Vgs Rds on measurement:10V; Case style:SO-8 PowerPak; Charge, gate p channel:49nC; Current, Idm pulse:30A; Depth, RoHS Compliant: Yes
(ST2xxx) 16 Kbit Serial I2C Bus EEPROM with User-Defined Block Write Protection
16/8/4/2/1KbitSerialICBusEEPROM
|
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
