PART |
Description |
Maker |
BYQ28ED-200 BYQ28 BYQ28E-200 |
Rectifier diodes ultrafast, rugged Dual ultrafast power diode
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NXP Semiconductors N.V.
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SER30KB60S SER30KE60 SER30KE60S SER30KE60TX SER30K |
30AMP 300-600 VOLT ULTRAFAST POWER SURFACE MOUNT RECTIFIER
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Solid States Devices, Inc
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RURP640CC FN4007 RURP660CC RURP650CC |
6A, 600V Ultrafast Dual Diodes(6A, 600V 瓒?揩???浜??绠? From old datasheet system 6A, 400V - 600V Ultrafast Dual Diodes 6A, 500V Ultrafast Dual Diodes(6A, 500V 超快速双二极 6A, 600V Ultrafast Dual Diodes(6A, 600V 超快速双二极 6A, 400V Ultrafast Dual Diodes(6A, 400V 超快速双二极 6A/ 400V - 600V Ultrafast Dual Diodes
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HARRIS SEMICONDUCTOR INTERSIL[Intersil Corporation]
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MAX6740XKD-T MAX6741XKD-T MAX6742XKD-T MAX6743XKD- |
Vcc1: 3.075 V, Vcc2: 1.388 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit Vcc1: 3.075 V, Vcc2: 1.665 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit Vcc1: 3.075 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit Vcc1: 2.188 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit Vcc1: 2.925 V, Vcc2: 1.313 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit Vcc1: 1.575 V, Vcc2: 0.788 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit Vcc1: 3.075 V, Vcc2: 0.833 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit Vcc1: 3.075 V, Vcc2: 1.110 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit Vcc1: 2.188 V, Vcc2: 1.313 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit Vcc1: 1.665 V, Vcc2: 1.110 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit Vcc1: 2.625 V, Vcc2: 1.575 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit Vcc1: 2.925 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit Vcc1: 1.575 V, Vcc2: 1.313 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit Vcc1: 2.925 V, Vcc2: 2.188 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit Vcc1: 2.625 V, Vcc2: 1.313 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits Low-Power Dual-/Triple-Voltage SC70 ?P Supervisory Circuits (MAX6736 - MAX6745) Low-Power Dual-/Triple-Voltage SC70 UP Supervisory Circuits Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits 2-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO5 Vcc1: 2.925 V, Vcc2: 1.575 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit Vcc1: 1.665 V, Vcc2: 3.075 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit Vcc1: 2.625 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit Vcc1: 4.375 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit Vcc1: 2.625 V, Vcc2: 0.788 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit Vcc1: 1.665 V, Vcc2: 1.388 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit Vcc1: 2.188 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit Vcc1: 1.575 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit Vcc1: 2.925 V, Vcc2: 0.788 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit Vcc1: 2.188 V, Vcc2: 1.575 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit Vcc1: 3.075 V, Vcc2: 2.313 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit Vcc1: 2.188 V, Vcc2: 0.788 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit Vcc1: 4.625 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
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MAXIM - Dallas Semiconductor MAXIM[Maxim Integrated Products] http:// Maxim Integrated Products, Inc. MAXIM INTEGRATED PRODUCTS INC
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FFA60UP30DNTU |
300V Ultrafast Recovery Power Rectifier; Package: TO-3P; No of Pins: 3; Container: Rail 30 A, 300 V, SILICON, RECTIFIER DIODE
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Fairchild Semiconductor, Corp.
|
CM300DU-12H |
Dual IGBTMODU-Series Module 300 Amperes/600 Volts Dual IGBTMOD U-Series Module 300 Amperes/600 Volts Dual IGBTMOD⑩ U-Series Module 300 Amperes/600 Volts
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POWEREX[Powerex Power Semiconductors]
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RURG15100C RURG15100CC FN2933 |
15A/ 1000V Ultrafast Dual Diode 15A 1000V Ultrafast Dual Diode 15A, 1000V Ultrafast Dual Diode From old datasheet system
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INTERSIL[Intersil Corporation]
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TGL200U10 TGL200U08 TGL200U06 |
Series Connection of Ultrafast Switching Blocking Diode and Transient Voltage Suppressor 300 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-213AB
|
DIOTEC SEMICONDUCTOR AG
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BYW51-100 BYW51-150 BYW51-200 FN1374.PDF FN1412 |
25C 16 190/38 BC PVC,PVC 8A/ 100V - 200V Ultrafast Dual Diodes 8A, 100V - 200V Ultrafast Dual Diodes From old datasheet system
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INTERSIL[Intersil Corporation]
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APT2X31D100J APT2X30D100J |
DUAL DIE ISOTOP PACKAGE ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES 1000V 30A
|
ADPOW[Advanced Power Technology]
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APT2X61D60J APT2X60D60J |
DUAL DIE ISOTOP PACKAGE ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES 600V 60A
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ADPOW[Advanced Power Technology]
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