PART |
Description |
Maker |
CPD4110 |
Switching Diode High Current Switching Diode Chip
|
Central Semiconductor Corp
|
CPD41 |
Switching Diode High Current Switching Diode Chip
|
Central Semiconductor Corp
|
LRB520S-30T1G-11 |
SCHOTTKY BARRIER DIODE Low current rectification and high speed switching
|
Leshan Radio Company
|
IKW75N65ES5-15 |
5 high Speed soft switching IGBT with full current rated RAPID 1 diode
|
Infineon Technologies A...
|
BAT20J BAT20JFILM -BAT20J |
HIGH EFFICIENCY SWITCHING AND ULTRA LOW LEAKAGE CURRENT SCHOTTKY DIODE 1 A, 23 V, SILICON, SIGNAL DIODE
|
STMicroelectronics
|
BUP410D Q67040-A4425-A2 |
IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode) High Speed CMOS Logic 7-Stage Binary Ripple Counter 14-TSSOP -55 to 125
|
Siemens Semiconductor Group SIEMENS AG
|
KDR720S |
Schottky Barrier Diode SCHOTTKY BARRIER TYPE DIODE(FOR HIGH SPEED SWITCHING CIRCUIT, FOR SMALL CURRENT RECTIFICATION)
|
Korea Electronics (KEC) KEC[KEC(Korea Electronics)]
|
CMPD2004S CMPD2003 CMPD2003C CMPD2003S CMPD2004 CM |
SURFACE MOUNT HIGH VOLTAGE SILICON SWITCHING DIODE SMD Switching Diode Dual: High Voltage: Common Anode
|
CENTRAL[Central Semiconductor Corp]
|
ZHCS1000 ZHCS1000TA |
High Current Schottky Diode SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE ”SuperBAT” SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE B>SuperBAT DIODE SCHOTTKY SOT-23 SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE SuperBAT 1 A, SILICON, SIGNAL DIODE SOT23 SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE ”SuperBAT?/a>
|
ZETEX[Zetex Semiconductors] Zetex Semiconductor PLC Diodes Incorporated
|
BY329X1500 BY329X-1500S BY329X-1500 BY329X-1500S12 |
Triac; Thyristor Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:1000V; On State RMS Current, IT(rms):8A; Gate Trigger Current (QI), Igt:50mA; Current, It av:8A; Gate Trigger Current Max, Igt:50mA RoHS Compliant: Yes Damper diode fast, high-voltage Damper diode fast/ high-voltage Damper diodes fast, high-voltage - I<sub>FRM</sub>: 16 A; I<sub>O (AV)</sub>: 10 A; V<sub>RRM</sub>: 1500 V; Package: SOD113 (TO-220F); Container: Horizontal, Rail Pack
|
http:// NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
|
BUP400D Q67040-A4423-A2 BUP400-D |
IGBT Duopack (IGBT with Antiparallel ... IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode) From old datasheet system High Speed CMOS Logic 7-Stage Binary Ripple Counter 14-TSSOP -55 to 125 由于IGBT的反平行二极管(低正向压降高开关速度低尾电流的无闩锁包括快速滑行二极管
|
Siemens Semiconductor G... Infineon Siemens Semiconductor Group SIEMENS AG
|
1N74 1N60D 1N68A 1N96A 1N72 1N73 1N93 1N63 1N61 1N |
Diode Switching 100V 10A 2-Pin Diode Switching 50V 3A 2-Pin Case A GOLD BOUNDED GERMANUM DIODE Diode Small Signal Switching 75V 0.3A Automotive 2-Pin DO-35 T/R Diode Switching 125V 0.0003A 2-Pin DO-35 Diode Switching 50V 0.005A 2-Pin Case H GOLD BONDED GERMANIUM DIODES
|
New Jersey Semiconductor
|