| PART |
Description |
Maker |
| SP0610LE-6288 BSS129E-6325 BSS149E-6288 |
180 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
150 mA, 240 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
350 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
|
SIEMENS AG
INFINEON TECHNOLOGIES AG
|
| 7812 AD7812 AD7812YRU AD7811 AD7811YN AD7811YR AD7 |
2.7 V to 5.5 V, 350 kSPS, 10-Bit 4-/8-Channel Sampling ADCs
10-Bit, 8-Channel, 350 kSPS, Serial A/D Converter
10-Bit, 4-Channel, 350 kSPS, Serial A/D Converter
2.7 V to 5.5 V, 350 kSPS, 10-Bit 4-/8-Channel Sampling ADCs
|
AD[Analog Devices]
|
| TC1550TG-G |
N- and P-Channel Enhancement-Mode Dual MOSFET 350 A, 500 V, 60 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
|
Supertex, Inc.
|
| SI1013R-T1-GE3 |
350 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
VISHAY SILICONIX
|
| FQD7N10L FQD7N10LTF |
N-Channel QFET MOSFET 100 V, 5.8 A, 350 m
|
Fairchild Semiconductor
|
| NGB8206ANT4G NGB8206NT4G NGB8206ANSL3G NGB8206N11 |
Ignition IGBT 20 A, 350 V, N.Channel D2PAK
|
ON Semiconductor
|
| JANTX2N6766 |
N Channel MOSFET; Package: TO-204AE; ID (A): 30; PD (W): 150; BVDSS (V): 200; Rq: 0.83; 30 A, 200 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE
|
Microsemi, Corp.
|
| CR0805F-64R9FPB CR0805F-64R9JPB CR0805F-64R9DPB CR |
RESISTOR, METAL GLAZE/THICK FILM, 0.125 W, 1 %, 200 ppm, 64.9 ohm, SURFACE MOUNT, 0805 CHIP
RESISTOR, METAL GLAZE/THICK FILM, 0.125 W, 5 %, 200 ppm, 64.9 ohm, SURFACE MOUNT, 0805 CHIP
RESISTOR, METAL GLAZE/THICK FILM, 0.125 W, 0.5 %, 200 ppm, 64.9 ohm, SURFACE MOUNT, 0805 CHIP
RESISTOR, METAL GLAZE/THICK FILM, 0.125 W, 2 %, 200 ppm, 64.9 ohm, SURFACE MOUNT, 0805 CHIP
RESISTOR, METAL GLAZE/THICK FILM, 0.125 W, 1 %, 350 ppm, 4.64 ohm, SURFACE MOUNT, 0805 CHIP
RESISTOR, METAL GLAZE/THICK FILM, 0.125 W, 2 %, 350 ppm, 4.64 ohm, SURFACE MOUNT, 0805 CHIP
RESISTOR, METAL GLAZE/THICK FILM, 0.125 W, 5 %, 350 ppm, 4.64 ohm, SURFACE MOUNT, 0805 CHIP
RESISTOR, METAL GLAZE/THICK FILM, 0.25 W, 2 %, 350 ppm, 1.18 ohm, SURFACE MOUNT, 1206 CHIP, LEAD FREE
RESISTOR, METAL GLAZE/THICK FILM, 0.125 W, 2 %, 350 ppm, 1.18 ohm, SURFACE MOUNT, 1005 CHIP, LEAD FREE
RESISTOR, METAL GLAZE/THICK FILM, 0.25 W, 2 %, 200 ppm, 68.1 ohm, SURFACE MOUNT, 1206 CHIP, LEAD FREE
|
Welwyn Components, Ltd.
|
| IRFU321 |
3.1 A, 350 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
|
HARRIS SEMICONDUCTOR
|
| IRF713 IRF711 MTP2N35 IRF712 IRF710 IRF710-713 MTP |
N-Channel Power MOSFETs/ 2.25A/ 350-400V
N-Channel Power MOSFETs 2.25A 350-400V
N-Channel Power MOSFETs, 2.25A, 350-400V
|
FAIRCHILD[Fairchild Semiconductor]
|
| SFF250-61 SFF250/61 |
30 AMP 200 Volts 0.085OHM N-Channel POWER MOSFET 30 A, 200 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-61
|
Solid States Devices, Inc.
Solid State Devices, Inc.
|
|
