PART |
Description |
Maker |
HY5PS1G1631CLFP-Y5I HY5PS1G431CLFP-Y5I HY5PS1G1631 |
64M X 16 DDR DRAM, PBGA84 256M X 4 DDR DRAM, PBGA60
|
HYNIX SEMICONDUCTOR INC
|
HY5DU121622ALT-D4 HY5DU121622ALT-M HY5DU12422AT HY |
DDR SDRAM - 512Mb 64M X 8 DDR DRAM, 0.7 ns, PDSO66 32M X 16 DDR DRAM, 0.7 ns, PDSO66
|
HYNIX SEMICONDUCTOR INC
|
MT46V32M16P-5BLF MT46V32M16P-5BFTR MT46V32M16P-5BL |
32M X 16 DDR DRAM, 0.7 ns, PDSO66 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66 64M X 8 DDR DRAM, 0.75 ns, PDSO66 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66 512Mb: x4, x8, x16 DDR SDRAM Features 128M X 4 DDR DRAM, 0.7 ns, PBGA60
|
Micron Technology, Inc.
|
MT8VDDT3232UG-75XX MT8VDDT12832UY-75XX MT8VDDT6432 |
32M X 32 DDR DRAM MODULE, 0.75 ns, DMA100 DIMM-100 128M X 32 DDR DRAM MODULE, 0.75 ns, DMA100 LEAD FREE, DIMM-100 64M X 32 DDR DRAM MODULE, 0.75 ns, DMA100
|
Lattice Semiconductor, Corp.
|
NANYATECHNOLOGYCORP-NT5TU64M16GG-BE NT5TU64M16GG-A |
64M X 16 DDR DRAM, 0.4 ns, PBGA84
|
NANYA TECHNOLOGY CORP
|
HY5PS12821F-Y6 |
64M X 8 DDR DRAM, PBGA60
|
HYNIX SEMICONDUCTOR INC
|
IS43DR16640A-3DBLI |
64M X 16 DDR DRAM, 0.45 ns, PBGA84
|
INTEGRATED SILICON SOLUTION INC
|
HY5DU56422DF-D4 |
64M X 4 DDR DRAM, 0.65 ns, PBGA60
|
HYNIX SEMICONDUCTOR INC
|
K4H560838H-UC/LCC K4H561638H-UC/LCC K4H560438H-UC/ |
32M X 8 DDR DRAM, 0.7 ns, PDSO66 ROHS COMPLIANT, TSOP2-66 32M X 8 DDR DRAM, 0.75 ns, PDSO66 ROHS COMPLIANT, TSOP2-66 64M X 4 DDR DRAM, 0.75 ns, PDSO66 ROHS COMPLIANT, TSOP2-66 256Mb H-die DDR SDRAM Specification
|
Atmel, Corp. SAMSUNG SEMICONDUCTOR CO. LTD.
|
HYS72T64001HP-3S-A |
64M X 72 DDR DRAM MODULE, 0.45 ns, DMA240
|
QIMONDA AG
|
|