| PART |
Description |
Maker |
| RJK0204DPA-00-J5A RJK0204DPA13 |
Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK0380DPA RJK0380DPA-00-J5A |
Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK03R4DPA RJK03R4DPA-00-J5A |
Built in SBD Dual N-channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK03N1DPA |
30V, 45A, 3.0m max. Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK03N5DPA |
30V, 45A, 2.9m max. Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK03N3DPA |
30V, 35A, 4.7m max. Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| CPH583507 CPH5835 |
Pch SBD
MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device
|
Sanyo Semicon Device
|
| PU61C56 |
Power Transistor Array (F-MOS FETs) - Silicon N-Channel Power F-MOS (with built-in zener diode)
|
Panasonic
|
| M1FH3 |
Schottky Rectifiers (SBD) / Single (Surface Mount)
SCHOTTKY RECIFIERS (SBD)
|
SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
|
| TDA7563 E-TDA7563 |
46 W, 4 CHANNEL, AUDIO AMPLIFIER, PZFM27
MULTIFUNCTION QUAD POWER AMPLIFIER WITH BUILT-IN DIAGNOSTICS FEATURES
|
STMICROELECTRONICS
意法半导
ST Microelectronics
|
