| PART |
Description |
Maker |
| MJW2119310 MJW21194G |
16 A COMPLEMENTARY SILICON POWER TRANSISTORS 250 V, 200 W 16 A, 250 V, NPN, Si, POWER TRANSISTOR, TO-247
|
ON Semiconductor
|
| CFD2374 CFD2374Q CFB1548 CFB1548A CFB1548AP CFB154 |
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 70 - 250 hFE. Complementary CFB1548
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 70 - 150 hFE. Complementary CFB1548Q
2.000W Power PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 70 - 250 hFE. Complementary CFD2374
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 70 - 250 hFE. Complementary CFD2374A
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 120 - 250 hFE. Complementary CFD2374AP
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 70 - 150 hFE. Complementary CFD2374AQ
2.000W Power PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 120 - 250 hFE. Complementary CFD2374P
2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 70 - 250 hFE. Complementary CFB1548A
2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 120 - 250 hFE. Complementary CFB1548AP
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 120 - 250 hFE. Complementary CFB1548P
2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 70 - 150 hFE. Complementary CFB1548AQ
|
Continental Device India Limited
|
| BUP53 BUP52 BUP53.MODR1 |
60 A, 250 V, NPN, Si, POWER TRANSISTOR, TO-204AE HERMETIC SEALED, METAL, TO-3, 2 PIN
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package.
|
TT electronics Semelab, Ltd.
SEME-LAB[Seme LAB]
|
| BUT34 |
50 AMPERES NPN SILICON POWER DARLINGTON TRANSISTOR 850 VOLTS 250 WATTS
|
Motorola Inc
Motorola, Inc.
|
| TIP49 TIP50 TIP47 TIP48 |
POWER TRANSISTORS(1.0A250-400V40W)
POWER TRANSISTORS(1.0A/250-400V/40W)
POWER TRANSISTORS(1.0A,250-400V,40W) 功率晶体管（安培,250 -00V，功0W
|
MOSPEC[Mospec Semiconductor]
Mospec Semiconductor, Corp.
|
| BFT25_CNV_2 BFT25/T1 BFT25-15 BFT25-2015 |
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????)
From old datasheet system
NPN 2 GHz wideband transistor
|
Quanzhou Jinmei Electro...
|
| D44T8 D44T2 D44T3 D44T1 D44T4 D44T5 D44T6 D44T7 |
POWER TRANSISTORS(2.0A,250-300V,31W) 功率晶体管（2.0安培,250 - 300V1宽）
|
Mospec Semiconductor, Corp.
|
| C44AFGR6250ZA0J |
Film, Metallized Polypropylene, Power, C44A, 250 uF, 5%, 400 V, 250 V
|
Kemet Corporation
|
| MJ15024 MJ15022 ON1983 |
16 AMPERE SILICON POWER TRANSISTORS 200 AND 250 VOLTS 250 WATTS
From old datasheet system
|
ONSEMI[ON Semiconductor]
MOTOROLA[Motorola, Inc]
|
| MTB16N25E_D ON2396 MTB16N25E MTB16N25E-D MOTOROLAI |
TMOS POWER FET 16 AMPERES 16 A, 250 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET
From old datasheet system
TMOS POWER FET 16 AMPERES 250 VOLTS
TMOS E-FET High Energy Power FET D2PAK for Surface Mount
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
| 2N2760 2N2761 2N2822 |
30 A, 200 V, NPN, Si, POWER TRANSISTOR, TO-63
30 A, 250 V, NPN, Si, POWER TRANSISTOR, TO-63
25 A, 200 V, NPN, Si, POWER TRANSISTOR, TO-63
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