| PART |
Description |
Maker |
| 2N119 |
N-P-N GROWN JUNCTION SILICON TRANSISTOR
|
New Jersey Semi-Conductor Products, Inc.
|
| 1SMC6.5CA 1SMC8.0CA 1SMC5.0CA 1SMC6.0CA 1SMC7.0CA |
Bi-Directional Glass Passivated Junction Transient Voltage Suppressors(最大反向工作电4V,双向玻璃钝化节点瞬变电压抑制 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE
Bi-Directional Glass Passivated Junction Transient Voltage Suppressors(最大反向工作电.0V,双向玻璃钝化节点瞬变电压抑制 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE
BI-DIRECTIONAL GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR 1500 WATTS, 5.0 THRU 170 VOLTS 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE
Bi-Directional Glass Passivated Junction Transient Voltage Suppressors(最大反向工作电8V,双向玻璃钝化节点瞬变电压抑制 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE
Bi-Directional Glass Passivated Junction Transient Voltage Suppressors(最大反向工作电6.5V,双向玻璃钝化节点瞬变电压抑制
STRAP BATTERY FIBRE BASE 9V 4LD
Bi-Directional Glass Passivated Junction Transient Voltage Suppressors(最大反向工作电.5V,双向玻璃钝化节点瞬变电压抑制
BI-DIRECTIONAL GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR 1500 WATTS/ 5.0 THRU 170 VOLTS
|
http://
Central Semiconductor, Corp.
Central Semiconductor Corp.
|
| 2SK710 E001574 SK710 |
N CHANNEL JUNCTION TYPE (HIGH, AM HIGH, AUDIO FREQUENCY AMPLIFIER APPLICATIONS)
SILICON N CHANNEL JUNCTION TYPE
From old datasheet system
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SK0662 2SK662 2SK06622SK662 |
From old datasheet system
Silicon N-Channel Junction FET
Small-signal device - Small-signal FETs - Junction FETs
|
PANASONIC[Panasonic Semiconductor]
|
| 2M6.8Z 2M2.Z 2M2.0Z 2M160Z 2M30Z 2M39Z 2M36Z 2M47Z |
2.0 Watts Glass Passivated Junction Silicon Zener Diodes
160 V, 2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-15
|
Taiwan Semiconductor Company, Ltd
Taiwan Semiconductor Compan...
Taiwan Semiconductor Co...
|
| FJZ594JC FJZ594J FJZ594JB FJZ594JBTF FJZ594JTF FJZ |
Silicon N-Channel Junction FET
Si N-channel Junction FET 1 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Fairchild Semiconductor, Corp.
|
| Q62702-B257 BBY34D Q62702-B194 BBY34C |
Silicon Tuning Varactors (Hyperabrupt junction tuning diode Frequency linear tuning range 4 ˇ 12 V) 硅调谐变容二极管（Hyperabrupt交界调谐二极管频率线性调谐范 12五）
Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):12A; Gate Trigger Current (QI), Igt:35mA; Current, It av:12A; Forward Current:12A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
Silicon Tuning Varactors (Hyperabrupt junction tuning diode Frequency linear tuning range 4 12 V)
Silicon Tuning Varactors (Hyperabrupt junction tuning diode Frequency linear tuning range 4 ?12 V)
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| 2N5432 |
N-CHANNEL SILICON JUNCTION
|
New Jersey Semi-Conductor P...
|
| AT6022B-15 |
SILICON ABRUPT JUNCTION VARACTOR VHF BAND, 56 pF, 70 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
|
Advanced Semiconductor, Inc.
|
| AT9019-10 |
SILICON ABRUPT JUNCTION TUNING VARACTOR 33 pF, 90 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
|
Advanced Semiconductor, Inc.
|
| 2SK217 |
Silicon N-Channel Junction FET
|
Hitachi Semiconductor
|
| 2SK55 |
SILICON N-CHANNEL JUNCTION FET
|
Hitachi Semiconductor
|
