| PART |
Description |
Maker |
| STD70N03L-1 |
70 A, 30 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
|
STMICROELECTRONICS
|
| AP85T08GS |
75 A, 80 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB ROHS COMPLIANT, TO-263, 3 PIN
|
Advanced Power Electronics, Corp.
|
| HUF76131SK8 |
10A, 30V, 0.013 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
|
Fairchild Semiconductor
|
| MUX08EP MUX08FP |
8-Chan/Dual 4-Chan JFET Analog Multiplexers (Overvoltage & Power Supply Loss Protected) 8-CHANNEL, SGL ENDED MULTIPLEXER, PDIP16
|
Analog Devices, Inc.
|
| SUD50P04-13L-E3 SUD50P04-13L09 |
50 A, 40 V, 0.013 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252 ROHS COMPLIANT PACKAGE-3
P-Channel 40-V (D-S) 175 °C MOSFET
|
Vishay Intertechnology, Inc.
Vishay Siliconix
|
| ITE08C06 ITE08F06 |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 8A I(C) | TO-247AA
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 8A I(C) | TO-220AB 晶体管| IGBT的|正陈| 600V的五（巴西）国际消费电子展| 8A条一（c）| TO - 220AB现有
|
Continental Device India, Ltd.
|
| NTP75N03RG NTB75N03R NTB75N03RG |
Power MOSFET 75 A, 25V N-Channel, TO-220; Package: TO-220 3 LEAD STANDARD; No of Pins: 3; Container: Rail; Qty per Container: 50 75 A, 25 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Power MOSFET 75 Amps, 25 Volts N?Channel D2PAK, TO?20
|
ON Semiconductor
|
| DSPIC30F2012A20E/P DSPIC30F2012A20E/SO DSPIC30F201 |
High-Performance, 16-Bit Digital Signal Controllers
16-BIT, FLASH, 40 MHz, RISC MICROCONTROLLER, PDSO18 0.300 INCH, PLASTIC, MS-013, SOIC-18
16-BIT, FLASH, 40 MHz, RISC MICROCONTROLLER, PDSO28 0.300 INCH, PLASTIC, MS-013, SOIC-28
|
Microchip Technology Inc.
Intel, Corp.
|
| LTO030F0.01OHMJTE3 LTO030F0.02OHMJTE3 LTO030F0.03O |
RESISTOR, METAL GLAZE/THICK FILM, 2.25 W, 5 %, 150 ppm, 0.01 ohm, THROUGH HOLE MOUNT TO-220, ROHS COMPLIANT
RESISTOR, METAL GLAZE/THICK FILM, 2.25 W, 5 %, 150 ppm, 0.02 ohm, THROUGH HOLE MOUNT TO-220, ROHS COMPLIANT
RESISTOR, METAL GLAZE/THICK FILM, 2.25 W, 5 %, 150 ppm, 0.03 ohm, THROUGH HOLE MOUNT TO-220, ROHS COMPLIANT
RESISTOR, METAL GLAZE/THICK FILM, 2.25 W, 5 %, 150 ppm, 0.022 ohm, THROUGH HOLE MOUNT TO-220, ROHS COMPLIANT
RESISTOR, METAL GLAZE/THICK FILM, 2.25 W, 5 %, 150 ppm, 0.033 ohm, THROUGH HOLE MOUNT TO-220, ROHS COMPLIANT
RESISTOR, METAL GLAZE/THICK FILM, 2.25 W, 5 %, 150 ppm, 0.039 ohm, THROUGH HOLE MOUNT TO-220, ROHS COMPLIANT
RESISTOR, METAL GLAZE/THICK FILM, 2.25 W, 5 %, 150 ppm, 0.012 ohm, THROUGH HOLE MOUNT TO-220, ROHS COMPLIANT
RESISTOR, METAL GLAZE/THICK FILM, 2.25 W, 5 %, 150 ppm, 0.043 ohm, THROUGH HOLE MOUNT TO-220, ROHS COMPLIANT
RESISTOR, METAL GLAZE/THICK FILM, 2.25 W, 5 %, 150 ppm, 0.056 ohm, THROUGH HOLE MOUNT TO-220, ROHS COMPLIANT
RESISTOR, METAL GLAZE/THICK FILM, 2.25 W, 5 %, 150 ppm, 0.018 ohm, THROUGH HOLE MOUNT TO-220, ROHS COMPLIANT
RESISTOR, METAL GLAZE/THICK FILM, 2.25 W, 5 %, 150 ppm, 0.027 ohm, THROUGH HOLE MOUNT TO-220, ROHS COMPLIANT
RESISTOR, METAL GLAZE/THICK FILM, 2.25 W, 5 %, 150 ppm, 0.062 ohm, THROUGH HOLE MOUNT TO-220, ROHS COMPLIANT
RESISTOR, METAL GLAZE/THICK FILM, 2.25 W, 5 %, 150 ppm, 0.024 ohm, THROUGH HOLE MOUNT TO-220, ROHS COMPLIANT
RESISTOR, METAL GLAZE/THICK FILM, 2.25 W, 5 %, 150 ppm, 0.051 ohm, THROUGH HOLE MOUNT TO-220, ROHS COMPLIANT
RESISTOR, METAL GLAZE/THICK FILM, 2.25 W, 5 %, 150 ppm, 0.036 ohm, THROUGH HOLE MOUNT TO-220, ROHS COMPLIANT
RESISTOR, METAL GLAZE/THICK FILM, 2.25 W, 5 %, 150 ppm, 0.013 ohm, THROUGH HOLE MOUNT TO-220, ROHS COMPLIANT
RESISTOR, METAL GLAZE/THICK FILM, 2.25 W, 5 %, 150 ppm, 0.047 ohm, THROUGH HOLE MOUNT TO-220, ROHS COMPLIANT
RESISTOR, METAL GLAZE/THICK FILM, 2.25 W, 5 %, 150 ppm, 0.011 ohm, THROUGH HOLE MOUNT TO-220, ROHS COMPLIANT
RESISTOR, METAL GLAZE/THICK FILM, 2.25 W, 5 %, 150 ppm, 0.016 ohm, THROUGH HOLE MOUNT TO-220, ROHS COMPLIANT
|
Vishay Intertechnology, Inc.
|
| S29GL064M90FBIR00 S29GL064M90FCIR02 S29GL064M90FCI |
MOSFET, Switching; VDSS (V): 300; ID (A): 88; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.042; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5000; toff (µs) typ: -; Package: TO-3P
MOSFET, Switching; VDSS (V): 30; ID (A): 60; Pch : 90; RDS (ON) typ. (ohm) @10V: 0.0046; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2500; toff (µs) typ: 0.07; Package: TO-220AB
MOSFET, Switching; VDSS (V): 60; ID (A): 70; Pch : 80; RDS (ON) typ. (ohm) @10V: 0.006; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 6200; toff (µs) typ: 0.125; Package: LDPAK (S)- (2)
MOSFET, Switching; VDSS (V): 60; ID (A): 70; Pch : 80; RDS (ON) typ. (ohm) @10V: 0.006; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 6200; toff (µs) typ: 0.125; Package: LDPAK (L)
MOSFET, Switching; VDSS (V): 150; ID (A): 70; Pch : -; RDS (ON) typ. (ohm) @10V: 0.022; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5100; toff (µs) typ: -; Package: TO-3P
MOSFET, Switching; VDSS (V): 200; ID (A): 25; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.036; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2200; toff (µs) typ: 0.11; Package: TO-220FN
MOSFET, Switching; VDSS (V): 200; ID (A): 96; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.02; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 4900; toff (µs) typ: 0.22; Package: TO-3P
MOSFET, Switching; VDSS (V): 290; ID (A): 18; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.07; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2200; toff (µs) typ: 0.11; Package: TO-220FN
MOSFET, Switching; VDSS (V): 230; ID (A): 35; Pch : -; RDS (ON) typ. (ohm) @10V: 0.03; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5200; toff (µs) typ: -; Package: TO-3PFM
MOSFET, Switching; VDSS (V): 300; ID (A): 40; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.058; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5150; toff (µs) typ: 0.22; Package: TO-3P
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 3.0伏只页面模式闪存具有0.23微米工艺技术的MirrorBit
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 4M X 16 FLASH 3V PROM, 90 ns, PDSO48
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 4M X 16 FLASH 3V PROM, 90 ns, PBGA64
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 16M X 16 FLASH 3V PROM, 100 ns, PDSO56
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 8M X 16 FLASH 3V PROM, 90 ns, PDSO56
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 8M X 8 FLASH 3V PROM, 90 ns, PBGA63
MOSFET, Switching; VDSS (V): 30; ID (A): 30; Pch : 50; RDS (ON) typ. (ohm) @10V: 0.008; RDS (ON) typ. (ohm) @4V[4.5V]: 0.013 (5V); RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1400; toff (µs) typ: 0.055; Package: LDPAK (L)
|
Spansion Inc.
Spansion, Inc.
SPANSION LLC
|
| WA8350.051OHMJA WA840.015OHMJA WA830.082OHMJA WA83 |
RESISTOR, WIRE WOUND, 2.5 W, 5 %, 350 ppm, 0.051 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 3 W, 5 %, 350 ppm, 0.015 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 2 W, 5 %, 350 ppm, 0.082 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 2.5 W, 5 %, 350 ppm, 0.082 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 2 W, 5 %, 350 ppm, 0.068 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 2 W, 5 %, 350 ppm, 0.091 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 2 W, 5 %, 350 ppm, 0.056 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 3 W, 5 %, 350 ppm, 0.013 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 2.5 W, 5 %, 350 ppm, 0.056 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 3 W, 5 %, 350 ppm, 0.012 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 2 W, 5 %, 350 ppm, 0.051 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 2.5 W, 5 %, 350 ppm, 0.091 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 2.5 W, 5 %, 350 ppm, 0.062 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 3 W, 5 %, 350 ppm, 0.011 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 2.5 W, 5 %, 350 ppm, 0.05 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 2 W, 5 %, 350 ppm, 0.05 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 2 W, 5 %, 350 ppm, 0.062 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 2.5 W, 5 %, 350 ppm, 0.068 ohm, THROUGH HOLE MOUNT AXIAL LEADED
|
Welwyn Components, Ltd.
|
|
