| PART |
Description |
Maker |
| NTE5906 NTE6005 NTE5980 NTE5907 NTE5995 NTE5986 NT |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 400V. Average forward current 40A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1600V. Average forward current 40A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A.
Receptacle With A Wire Wrap Tail
Silicon Power Rectifier Diode / 40 Amp
Silicon Power Rectifier Diode 40 Amp
NTE5906, NTE5907, NTE5980 thru NTE6005 Silicon Power Rectifier Diode, 40 Amp
40 A, 300 V, SILICON, RECTIFIER DIODE
40 A, 200 V, SILICON, RECTIFIER DIODE
|
NTE Electronics, Inc.
NTE[NTE Electronics]
|
| 1N964B 1N957B-1 1N965B 1N991B 1N958B 1N959B 1N960B |
Low Current Operation at 250 锛?ow Reverse Leakage,Low Noise Zener Diode
Low Current Operation at 250?录A茂录?Low Reverse Leakage,Low Noise Zener Diode(250?录A氓路楼盲陆?莽?碌忙碌?茫??氓掳?氓??氓??忙录?莽?碌忙碌?茫??盲陆?氓?陋氓拢掳茫??茅陆?莽潞鲁盲潞?忙??莽庐隆)
Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode 27 V, 0.417 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AA
Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode 82 V, 0.417 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AA
Zener Voltage Regulator Diode 150 V, 0.417 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AA
SILICON 400 mW ZENER DIODES
Ultra-Low-Voltage SC70 Voltage Detectors and µP Reset Circuits
SILICON 500 mW ZENER DIODES
|
MICROSEMI CORP-LAWRENCE
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| NTE5558 NTE5550 NTE5552 NTE5554 |
Silicon controlled rectifier. Peak reverse blocking voltage Vrrm = 400V. Forward current 25A.
Silicon Controlled Rectifiers
Silicon controlled rectifier. Peak reverse blocking voltage Vrrm = 200V. Forward current 25A.
|
NTE[NTE Electronics]
|
| SD275SCU100B |
SILICON SCHOTTKY RECTIFIER DIE Ultra Low Reverse Leakage 200∑C Operating Temperature 120 A, SILICON, RECTIFIER DIODE
|
Sensitron Semiconductor
|
| GUR5H60 GURF5H60 GURB5H60 |
Ultrafast Rectifiers, Forward Current 5.0A, Reverse Voltage 600V, Reverse Recovery Time 30ns
|
VISAY[Vishay Siliconix]
|
| DGT304RE DGT304RE13 |
Reverse Blocking Gate Turn-off Thyristor 390 A, 1300 V, REVERSE CONDUCTING GTO SCR
|
Dynex Semiconductor, Ltd.
Dynex Semiconductor Ltd.
DYNEX[Dynex Semiconductor]
|
| BZT52C3V0-7-F BZT52C8V2-7-F BZT52C2V008 BZT52C36-7 |
Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode 3 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode 8.2 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
SURFACE MOUNT ZENER DIODE
Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode 36 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
DIODE ZENER 39V 500MW SOD-123 39 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
Low Current Operation at 250 锛?ow Reverse Leakage,Low Noise Zener Diode
3.3 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
20 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
|
Diodes, Inc.
Diodes Incorporated
|
| BYV29SERIES UG8FT UGB8GT |
Ultrafast Rectifier, Reverse Voltage 300 to 400V, Forward Current 8.0A, Reverse Recovery Time 35ns
|
Vishay
|
| TIC108A TIC108B TIC108C TIC108D TIC108E TIC108M TI |
P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS
|
Comset Semiconductor
|
| TIC116A12 |
P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS
|
Comset Semiconductor
|
|
