| PART |
Description |
Maker |
| KDV350E0012 |
ESC PACKAGE
|
KEC(Korea Electronics)
|
| KDS160E KDS160E-05 |
ESC PACKAGE
|
KEC(Korea Electronics)
|
| KDV154E |
ESC PACKAGE
|
KEC(Korea Electronics)
|
| KDV239E KDV239E0012 |
ESC PACKAGE
|
KEC(Korea Electronics)
|
| KDV316E |
ESC PACKAGE
|
KEC(Korea Electronics)
|
| KDS114E KDS114E00 |
ESC PACKAGE
|
KEC(Korea Electronics)
|
| KDV215E |
ESC PACKAGE
|
KEC(Korea Electronics)
|
| IRKD250-30 IRK320 IRKC250 IRKC250-24 IRKJ250-24 IR |
RES 681-OHM 1% 0.25W 100PPM THICK-FILM SMD-1206 5K/REEL-7IN-PA 磁共甲柏电源模块
2000V Single Diode in a MAGN-A-Pak package 2000V单二极管在磁共振- à - Pak封装
2400V Single Diode in a MAGN-A-Pak package
2400V Doubler in a MAGN-A-Pak package
2000V Doubler in a MAGN-A-Pak package
1600V Single Diode in a MAGN-A-Pak package
1600V Doubler in a MAGN-A-Pak package
3000V Common Anode in a MAGN-A-Pak package
2400V Common Anode in a MAGN-A-Pak package
2000V Common Anode in a MAGN-A-Pak package
1600V Common Anode in a MAGN-A-Pak package
800V Common Anode in a MAGN-A-Pak package
800V Single Diode in a MAGN-A-Pak package
800V Doubler in a MAGN-A-Pak package
3000V Common Cathode in a MAGN-A-Pak package
2400V Common Cathode in a MAGN-A-Pak package
2000V Common Cathode in a MAGN-A-Pak package
1600V Common Cathode in a MAGN-A-Pak package
800V Common Cathode in a MAGN-A-Pak package
1200V Common Anode in a MAGN-A-Pak package
1200V Single Diode in a MAGN-A-Pak package
1200V Doubler in a MAGN-A-Pak package
1200V Common Cathode in a MAGN-A-Pak package
MAGN-A-pak Power Modules
STANDARD RECOVERY DIODES 标准恢复二极
|
IRF[International Rectifier]
RECOM Electronic GmbH
International Rectifier, Corp.
|
| 1N4046 1N4049 1N4048 1N4045 1N4056 1N4044 1N4047 1 |
275 Amp Avg Power Silicon Rectifier Diodes 275安培平均电力硅整流二极管
275am Avg POWER SILICON RECTIFIER DIODES
100V 275A Std. Recovery Diode in a DO-205AB (DO-9)package
150V 275A Std. Recovery Diode in a DO-205AB (DO-9)package
200V 275A Std. Recovery Diode in a DO-205AB (DO-9)package
250V 275A Std. Recovery Diode in a DO-205AB (DO-9)package
300V 275A Std. Recovery Diode in a DO-205AB (DO-9)package
400V 275A Std. Recovery Diode in a DO-205AB (DO-9)package
500V 275A Std. Recovery Diode in a DO-205AB (DO-9)package
600V 275A Std. Recovery Diode in a DO-205AB (DO-9)package
700V 275A Std. Recovery Diode in a DO-205AB (DO-9)package
800V 275A Std. Recovery Diode in a DO-205AB (DO-9)package
900V 275A Std. Recovery Diode in a DO-205AB (DO-9)package
1000V 275A Std. Recovery Diode in a DO-205AB (DO-9)package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| 8GBU12 8GBU 8GBU005 8GBU01 8GBU02 8GBU04 8GBU06 8G |
200V Bridge in a GBU package
8.0 Amps Single Phase Full Wave 八点?安培单相全
50V Bridge in a GBU package
100V Bridge in a GBU package
600V Bridge in a GBU package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| IRKD166 IRKC166 IRKC196-04 IRKC196-08 IRKC196-12 I |
1400V Single Diode in a INT-A-Pak package
1200V Single Diode in a INT-A-Pak package
1200V Doubler in a INT-A-Pak package
1600V Common Anode in a INT-A-Pak package
1600V Single Diode in a INT-A-Pak package
1600V Doubler in a INT-A-Pak package
1600V Common Cathode in a INT-A-Pak package
STANDARD RECOVERY DIODES
800V Doubler in a INT-A-Pak package
800V Single Diode in a INT-A-Pak package
1200V Common Anode in a INT-A-Pak package
800V Common Cathode in a INT-A-Pak package
1400V Doubler in a INT-A-Pak package
1400V Common Anode in a INT-A-Pak package 1400V共阳极的相依 Pak封装
1400V Common Cathode in a INT-A-Pak package 1400V共阴极的相依 Pak封装
NEW INT-A-pak Power Modules 新国甲柏电源模块
1200V Common Cathode in a INT-A-Pak package 1200伏共阴极的相依甲- Pak封装
800V Common Anode in a INT-A-Pak package 800V的共阳极的相依甲- Pak封装
230 A, 1200 V, SILICON, RECTIFIER DIODE
|
IRF[International Rectifier]
International Rectifier, Corp.
VISHAY SEMICONDUCTORS
|
| AM29CPL154H-25DC AM29CPL154H-25/BXA AM29CPL154H-25 |
User Programmable Special Function ASIC
200V Single N-Channel Hi-Rel MOSFET in a TO-254AA package; A JANTX2N7219 with Standard Packaging
100V Single N-Channel Hi-Rel MOSFET in a 18-pin LCC package; A JANTX2N6788U with Standard Packaging
200V Single N-Channel Hi-Rel MOSFET in a TO-259AA package; A IRFI260 with Standard Packaging
800V Single N-Channel Hi-Rel MOSFET in a TO-204AA package; A IRFAE40 with Standard Packaging
-55V Single P-Channel Hi-Rel MOSFET in a SMD-0.5 package; A IRF5NJ5305 with Standard Packaging
-100V Single P-Channel Hi-Rel MOSFET in a TO-205AF package; A IRFF9110 with Standard Packaging
400V Single N-Channel Hi-Rel MOSFET in a SMD-1 package; A IRFN340 with Standard Packaging
1000V Single N-Channel Hi-Rel MOSFET in a SMD-1 package; A IRFNG50 with Standard Packaging
-200V Single P-Channel Hi-Rel MOSFET in a TO-254AA package; A JANTXV2N7237 with Standard Packaging
-200V Single P-Channel Hi-Rel MOSFET in a TO-254AA package; A JANS2N7237 with Standard Packaging
40V Single N-Channel Hi-Rel MOSFET in a SMD-1 package; A IRL7N1404 with Standard Packaging 用户可编程ASIC的特殊功
|
Advanced Micro Devices, Inc.
|
